Semes Co., Ltd.

Kyo-Woog Koo

Jung Keun Cho

Hyun-Jong Kim

Jung-Keun Cho

Bo Ram Chan Sung

Keun-Young Park

Woo-Young Kim

Young-Ki Ahn

Jae-Jeong Jeong

Chang-Ro Yoon

In-Ho Bang

Bo-Ram-Chan Sung

Jeong-Min Kim

Joung-Hyeon Lim

Man-Seok Oh

Si-Eun Kim

The present invention is directed to a substrate dryer, a substrate treating apparatus including the substrate dryer, and a substrate treating method. The substrate dryer includes a chamber, a process chamber constituting one part of the chamber and provided for supplying supercritical fluid to a substrate to dry the substrate, and a high-pressure chamber constituting the other part of the chamber and provided for boosting the process chamber above a critical pressure. According to the present invention, the substrate drying chamber is boosted fast by the high-pressure chamber to change to a supercritical state and thus a substrate dry treatment is performed using supercritical fluid.

Substrate dryer using supercritical fluid, apparatus including the same, and method for treating substrate

There is provided an apparatus for treating a substrate using a plurality of treatment solutions in sequence. The apparatus includes treatment liquid collecting vessels for separately collecting used treatment solutions, and an exhaust member for separately discharging pollutant gases generated during a process.

Apparatus for treating substrate

Provided is an apparatus for cleaning and drying a substrate by applying a plurality of chemicals and gases to the substrate. The apparatus may include: a substrate support member including a chuck receiving a substrate; a first nozzle member injecting a drying fluid onto a top surface of the substrate for drying the substrate; a low cover including an opened top and enclosing the chuck; and an upper cover selectively closing the opened top of the low cover so as to dry the substrate in a closed space. Therefore, the apparatus dries a substrate more efficiently and protects the substrate from being contaminated by foreign pollutants. Furthermore, generation of an undesired oxidation layer on the substrate can be prevented.

Method and apparatus for cleaning substrates

A chucking member configured to chuck the edge of a substrate includes a chucking pin which is eccentric from the rotation center. The chucking pin has a streamline shape and includes a first front-end portion disposed at the front end relative to the flow of an air current generated by the rotation of the substrate and a first back-end portion disposed at the back end relative to the flow of the air current. The first front-end portion includes a first tip, and the first front-end portion has a round shape.

Chucking member and spin head and method for chucking substrate using the chucking member

An apparatus is provided for supplying a plurality of chemicals or gases to the surface of a substrate to clean and dry the substrate. The apparatus includes a substrate support unit with a chuck on which a substrate is loaded, a bottom chamber having an open top and configured to surround the circumference of the chuck, a top chamber configured to open or close the top of the bottom chamber such that a drying treatment for the substrate is performed while the substrate is isolated from the outside, and an indirect injection nozzle installed at the edge of the top chamber and configured to inject drying fluid toward the center of the top chamber such that the drying fluid is indirectly injected to the substrate. According to the apparatus, it is possible to enhance a substrate drying efficiency, suppress external contamination, and prevent the formation of an oxide layer.

Apparatus and method for treating substrate

A facility for cleaning substrates such as semiconductor wafers includes a loading/unloading part, an aligning part where wafers are repositioned from a horizontal state to a vertical state, a cleaning part performing etchant-treating, rinsing, and drying processes for wafers and having a plurality of process chamber stacked, and an interface part where a transfer bath is disposed to transfer wafers between the process chambers. When the wafers are transferred between the process chamber, the transfer bath is filled with deionized water (DI water) to prevent their exposure to the air. Wafers drawn out of the loading/unlading part are repositioned from a horizontal state to a vertical state and are transferred to a first process chamber being one of the process chambers to be subjected to a part of processes. After the wafers are transferred to a second process chamber being the other one of the process chambers to be subjected to the other processes, they are repositioned from a vertical state to a horizontal state. That is, the wafers are transferred along a loop shape to be processed.

Facility with multi-storied process chamber for cleaning substrates and method for cleaning substrates using the facility

In an apparatus for transferring a substrate, a partition wall is disposed in a vertical direction in a housing to divide an interior space of the housing into a first space and a second space. A pressure generating member divides the first space into an upper space and a lower space and moves in a vertical direction in the first space such that a positive pressure and a negative pressure are alternately generated in the upper space and the lower space. A substrate supporting member is movably disposed in the second space to support and to transfer the substrate. A plurality of gates is disposed on a side wall of the housing and the partition wall, and is opened and closed by the positive pressure and the negative pressure such that the particles are eliminated from the second space to an exterior space via the first space.

Unit for eliminating particles and apparatus for transferring a substrate having the same

Provided is an apparatus for supplying chemical liquid. The apparatus includes: a plurality of nozzles, each of which can be moved forward or backward and supplies chemical liquid; a nozzle cover which accommodates the nozzles therein and has an open end to allow each of the nozzles to move into or out of the nozzle cover; and a nozzle driver which moves each of the nozzles forward or backward.

Apparatus for supplying chemical liquid

A substrate treating apparatus includes a substrate support unit with a chuck on which a substrate is loaded; a bottom chamber having an open top and configured to surround the circumference of the chuck; a top chamber configured to open or close the top of the bottom chamber such that the substrate is dried while the top chamber is sealed from the outside; and a direct injection nozzle member installed at the top chamber to inject fluid directly to the substrate while the top of the bottom chamber is closed. According to the substrate treating apparatus, drying efficiency of an entire substrate is enhanced, external contaminants are blocked, and generation of an oxide layer is suppressed.

Apparatus and method for treating substrates

The present invention provides an apparatus and method for cleaning substrates such as semiconductor wafers by sinking the substrates into cleaning fluids such as cleaning chemicals or rinsing liquids and then drying the substrates. The substrate clean and dry apparatus of present invention includes a process chamber comprising a cleaning chamber that carries the cleaning fluid and discharges at bottom the cleaning fluid; and a drying chamber above the cleaning chamber. The process chamber further includes a discharge device for evacuating the gas from the drying chamber, the gas supplied into the drying chamber. The discharge device is located between the cleaning chamber and the drying chamber, and evacuates the gas by force such that the gas is driven down vertically in the drying chamber. The substrate clean and dry apparatus of the present invention generates fairly vertical and uniform gas flows over the surfaces of substrates in the drying chamber, and also evacuates the gas rapidly from the drying chamber, thereby enhancing efficiency of the drying process.

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Chungcheongnam-do, South Korea

Kyo-Woog Koo