Samsung Electronics Co., Ltd.

Kyo-Min Sohn

Sang-Joon Hwang

Young-Ho Suh

Ho-Young Song

Sang-Hoon Shin

Hae-Suk Lee

Han-Vit Jung

Cheol Su Kim

Dong-hyun Sohn

Yun-Young Lee

Sang-Bo Lee

Je-Min Ryu

Sung-Min Seo

Nak-Won Heo

Ho-Seok Seol

Young-Soo Sohn

Jong-Pil Son

Myeong-O Kim

Won-Il Bae

Yong-Hwan Noh

Ki-ho Hyun

Min-Soo Kim

Young-Sik Kim

Jung-Hwan Choi

Chul-woo Park

Sang-Uhn Cha

Uk-Song Kang

Min-Sang Park

Ki-Heung Kim

Gil-Su Kim

Kyu-Chang Kang

Tae-Yoon Lee

Nam-Sung Kim

Chi-Hwan Lee

A device, system, and/or method includes an internal circuit configured to perform at least one function, an input-output terminal set and a repair circuit. The input-output terminal set includes a plurality of normal input-output terminals connected to an external device via a plurality of normal signal paths and at least one repair input-output terminal selectively connected to the external device via at least one repair signal path. The repair circuit repairs at least one failed signal path included in the normal signal paths based on a mode signal and fail information signal, where the mode signal represents whether to use the repair signal path and the fail information signal represents fail information on the normal signal paths. Using the repair circuit, various systems adopting different repair schemes may be repaired and cost of designing and manufacturing the various systems may be reduced.

Device and system including adaptive repair circuit

An integrated circuit device includes a stack of integrated circuit memory dies having a plurality of through-substrate vias (TSVs) extending therethrough, and a buffer die electrically coupled to the plurality of TSVs. The buffer die includes a test interface circuit, which is configured to: (i) generate a plurality of internal test signals, which are synchronized with a second clock signal having a second frequency, from at least one control code, and from a plurality of external test signals, which are synchronized with a first clock signal having a first frequency less than the second frequency, and (ii) provide the plurality of internal test signals to at least one of the memory dies in said stack during a first test mode. The second frequency may be greater than three (3) times the first frequency.

Integrated circuit memory devices having buffer dies and test interface circuits therein that support testing and methods of testing same

Semiconductor memory device includes a memory cell array and an interface circuit including an ECC engine. The memory cell array includes a normal cell region and a parity cell region including a first sub parity region and a second sub parity region. The interface circuit receives main data and sub data comprising external parity or a data mask signal, generates a flag signal based on mask bits of the data mask signal, performs ECC encoding operation on the main data in response to an operation mode and the flag signal, stores the main data in the normal cell region, stores either the external parity or the flag signal in the second sub parity region in response to the operation mode, performs an ECC decoding operation on the main data read from the normal cell region in response to the operation mode and the flag signal.

Semiconductor memory devices, memory systems and methods of operating semiconductor memory devices

A semiconductor memory device which includes a memory cell array, an error injection register set, a data input buffer, a write data generator, and control logic. The error injection register set stores an error bit set, including at least one error bit, based on a first command. The error bit set is associated with a data set to be written in the memory cell array. The data input buffer stores the data set to be written in the memory cell array based on a second command. The write data generator generates a write data set to be written in the memory cell array based on the data set and the error bit set. The control logic controls the error injection register set and the data input buffer.

A memory device includes a memory cell array that includes a plurality of memory cell rows; and a refresh address generator configured to store flags respectively corresponding to the plurality of memory cell rows, generate refresh row addresses respectively corresponding to the plurality of memory cell rows by performing a count operation, and according to the flags, change a refresh period of the plurality of memory cell rows.

Memory device for controlling refresh operation by using cell characteristic flags

Provided are a method and an apparatus for repairing a memory cell in a memory test system. A test device detects a fail address by testing a memory device according to a test command, and temporarily stores the fail address in a fail address memory (FAM). The fail address is transmitted to the memory device according to a fail address transmission mode, is temporarily stored in a temporary fail address storage of the memory device, and is then stored in an anti-fuse array, which is a non-volatile storage device. To secure the reliability of data, stored data can be read to verify the data and a verification result can be transmitted in series or in parallel to the test device.

Device and method for repairing memory cell and memory system including the device

A semiconductor memory device includes a plurality of memory banks in a first region, a data terminal to which an input data signal is input, the data terminal being in a second region, and an inverting circuit that inverts or non-inverts the input data signal in response to an inversion control signal indicating whether the input data signal has been inverted, wherein at least one inverting circuit is disposed for each of the plurality of memory banks.

Semiconductor memory package including memory device with inverting circuit

A memory device including a stack semiconductor device including; an upper substrate vertically stacked on a lower substrate, the upper substrate including N upper through-silicon vias (UTSV) and upper driving circuits, and the lower substrate including N lower through-silicon vias (LTSV) and lower driving circuits, wherein each one of the upper driving circuits is stagger-connected between a Kth UTSV and a (K+1)th LTSV, where 'N' is a natural number greater than 1, and 'K' is a natural number ranging from 1 to (N&#x2212;1).

Stack semiconductor device and memory device with driving circuits connected to through-silicon-vias (TSV) in different substrates in a staggered manner

A semiconductor memory device includes a memory cell array, a repair control circuit and a refresh control circuit. The memory cell array includes a plurality of memory cells and a plurality of redundancy memory cells. The repair control circuit receives a repair command and performs a repair operation on a first defective memory cell among the plurality of memory cells during a repair mode. The semiconductor memory device may operate in a repair mode in response to the repair command. The refresh control circuit performs a refresh operation on non-defective ones of the plurality of memory cells during the repair mode.

Semiconductor memory devices including redundancy memory cells

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Yongin-si, South Korea

Kyo-Min Sohn