Samsung Electronics Co., Ltd.

Kyo Jin Choo

Hirosige Goto

Sang Chul Sul

Masaru Ishii

Gwi Deok Ryan Lee

Myung Won Lee

Sae Young Kim

Kyung Bae Park

Kyung Ho Lee

Jin Ho Seo

Seog Heon Ham

Kyu Sik Kim

Han Vit Yang

Yun Kyung Kim

Yu Jin Park

Sin-hwan Lim

Kwang Hee Lee

Kwang-hee Lee

Eun Young Jin

An image sensor comprising: a first layer having a plurality of groups of photodiodes formed in a semiconductor substrate, each group representing a 2&#xd7;2 array of photodiodes, with 2 first pixels configured to detect light of a first wavelength and 2 second pixels configured to detect light of a second wavelength, each first pixel positioned adjacent to the second pixels; and a second layer overlapping the first layer, the second layer is organic, having a plurality of organic photodiodes configured to detect light of a third wavelength, each organic photodiode positioned to partially overlap 2 first photodiodes and 2 second photodiodes of the first layer.

Image sensor, method for manufacturing the same, and image processing device having the image sensor

Provided is an organic pixel, which includes a semiconductor substrate including a pixel circuit, an interconnection layer having a first contact and a first electrode formed on a semiconductor substrate, and an organic photo-diode formed on the interconnection layer. For example, the organic photo-diode includes an insulation layer formed on the first electrode, a second electrode and a photo-electric conversion region formed between the first contact, the insulation layer and the second electrode. The photo-electric conversion region includes an electron donating organic material and an electron accepting organic material. The organic photo-diode may further include a second contact electrically connected to the first contact. The horizontal distance between the second contacts and the insulation layer may be less than or equal to a few micrometers, for example, 10 micrometers.

Organic pixels including organic photodiode, manufacturing methods thereof, and apparatuses including the same

A data transmission circuit of an image sensor includes first to Kth bus segments, and first to Kth data regeneration circuits respectively connected to the first to Kth bus segments and the first to (K&#x2212;1)th data regeneration circuits respectively connected to the second to Kth bus segments. Each of the first to Kth data regeneration circuits may be embodied as one of a buffer, a logic gate, and a synchronous circuit operating in response to a clock signal.

Image sensor including data transmission circuit having split bus segments

One embodiment of an analog-to-digital converter includes at least one comparator and a restriction circuit. The comparator has first and second input nodes and a connection node. The connection node is one of an internal node and an output node of the comparator. The restriction circuit is electrically connected to the connection node, and the restriction circuit is configured to restrict a voltage of the connection node.

Analog-to-digital conversion circuit, and image sensor including the same

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Seoul, South Korea

Kyo Jin Choo