Lg Philips Lcd Co., Inc.

Kyo Ho Moon

Yong In Park

Dong Hee Kim

Hu-Sung Kim

An X-ray detecting device and a fabricating method thereof that is capable of preventing breakage of a transparent electrode. In the device and method, a contact hole passing through a protective film is formed centering around a contact hole passing through a storage insulating film. Accordingly, step coverage of a transparent electrode provided on the protective film can stabilized to prevent breakage of the transparent electrode.

X-ray detecting device and fabricating method thereof

A method of fabricating an X-ray detecting device that is capable of preventing breakage of a transparent electrode. In the method, patterning of first and second insulating films occurs at different etching rates, with an etching ratio of the second insulating material to the first insulating material being greater than 1. Accordingly, undercut of the first and second insulating materials can be prevented. This stabilizes the step coverage of a subsequently formed transparent electrode.

Method of fabricating X-ray detecting device

A liquid crystal display device includes a substrate, an organic insulating film formed on the substrate, an alignment film having a first etch rate formed on the organic insulating film, and a silicon nitride layer having a second etch rate formed between the alignment film and the organic insulating film, wherein the first etch rate is different from the second etch rate.

Liquid crystal display device and fabricating method thereof, and reworking method of alignment film using the same

A thin film transistor and a fabricating method thereof are adaptive for increasing a capacitance of a storage capacitor. In the method, a gate electrode and a lower electrode of a capacitor are formed at the transistor area and the capacitor area of an insulating substrate, respectively. A gate insulating film, an active layer and an ohmic contact layer on the insulating substrate is sequentially formed to cover the gate electrode and the lower electrode. The ohmic contact layer and the active layer are primarily patterned in such a manner as to be left only at a portion corresponding to the gate electrode of the transistor area and thus expose the gate insulating film. Then, the ohmic contact layer and the active layer are secondarily patterned in such a manner as to reduce the thickness of the gate insulating film at a portion corresponding to the lower electrode. The source and drain electrodes are formed on the gate insulating film at the transistor area, and an upper electrode of the capacitor is formed at a portion corresponding to the lower electrode on the gate insulating insulating film of the capacitor.

Thin film transistor and fabricating method thereof

A method is disclosed for manufacturing an array substrate for use in a display device. The method includes providing a base substrate, forming a gate line on the base substrate using a first mask, forming sequentially a gate insulating layer, a semiconductor layer and a metal layer over the base substrate and the gate line, patterning the metal layer using a second mask to form a data line and a metal portion on the semiconductor layer, forming a protection layer over the data line, the metal portion and the semiconductor layer, forming a photoresist pattern on the protection layer over the data line using a third mask to define a first structure, applying at least two separate etching steps on the first structure to leave the gate insulating layer of a uniform thickness over the gate line and to pattern layers below the photoresist pattern, and forming a pixel electrode over a portion of the gate insulating layer on the gate line using a fourth mask.

Method of manufacturing array substrate for use in liquid crystal display device

In a partially formed liquid crystal display device, a window definition layer defines an etching endpoint detection window over a dummy pattern formed on the substrate. The window definition layer also defines an etch window over a real pattern formed on the substrate. The real pattern and the dummy pattern have the same thickness. During an etching process, a reactant from the etching step is monitored to determine when to stop the etching process.

Intermediate liquid crystal display device product having an end point detection window, method of fabrication and method of detecting etching end point

A thin film transistor and a fabricating method thereof are adaptive for increasing a capacitance of a storage capacitor. In the method, a gate electrode and a lower electrode of a capacitor are formed at the transistor area and the capacitor area of an insulating substrate, respectively. A gate insulating film, an active layer and an ohmic contact layer on the insulating substrate is sequentially formed to cover the gate electrode and the lower electrode. The ohmic contact layer and the active layer are primarily patterned in such a manner as to be left only at a portion corresponding to the gate electrode of the transistor area and thus expose the gate insulating film. Then, the ohmic contact layer and the active layer are secondarily patterned in such a manner as to reduce the thickness of the gate insulating film at a portion corresponding to the lower electrode. The source and drain electrodes are formed on the gate insulating film at the transistor area, and an upper electrode of the capacitor is formed at a portion corresponding to the lower electrode on the gate insulating film of the capacitor.

A method for manufacturing a liquid crystal display device, includes the steps of forming a gate line, a gate pad at an end of the gate line, and a gate shorting bar connected to the gate pad on a substrate, wherein the gate shorting bar is offset from an edge of the substrate, and depositing a gate insulation layer completely covering the gate line, the gate pad, and the gate shorting bar.

Manufacturing method of liquid crystal display preventing RF discharge damage

A method for manufacturing a device includes the steps of forming a layer on a substrate and patterning an etching end point detection area in the layer in accordance with a designed pattern including an etching end point detection part.

Growing community of inventors

Daegu-shi, South Korea

Kyo Ho Moon