Freescale Semiconductor,inc.

Quantenna Communications, Inc.

Semiconductor Components Industries, LLC

Kyle Zukowski

Didier Margairaz

Jiang-kai Zuo

Won Gi Min

Geoffrey W Perkins

Cristiano Benevento

Leonardo Mitsuyuki

Leonardo Kiyosi Bogaz Mitsuyuki

An adaptable LDO regulator includes an error amplifier providing an error voltage according to a difference between a feedback voltage and a reference voltage, first and second pass transistors each having a first current electrode for receiving an input voltage, a control electrode for receiving the error voltage, and a second current electrode, the second current electrode of the second pass transistor providing an output voltage, a voltage divider generating the feedback voltage in response to a voltage on an input thereof, and a mode selection network that in a closed loop mode, couples the second current electrodes of the first and second pass transistors together and to the input of the voltage divider, and in an open loop mode, couples the second current electrode of the first pass transistor to the input of the voltage divider and decouples the second current electrodes of the first and second pass transistors.

Adaptable low dropout (LDO) voltage regulator and method therefor

A transceiver apparatus for wireless communication includes components coupled to one another to form transmit chains for wireless communications. The components forming the transmit chains include power amplifiers (PA)s each coupled at a respective signal input to a corresponding one of the transmit chains for amplifying radio frequency (RF) signals of a wireless communication link and each power amplifier having a supply voltage input for powering the power amplifier, voltage sources having distinct voltage levels, and PA supply voltage detectors each coupled at an input to an associated one of the transmit chains to detect changes in an amplitude of the signal on each transmit chain. The transceiver apparatus includes a link power circuit coupled to the PA supply voltage detectors, the link power circuit to determine maximum voltage levels to be applied to the supply voltage inputs of the PAs.

Regulated switch banks for driving transmit power amplifiers of a MIMO wireless transceiver

A wireless transceiver including: antennas, components forming transmit and receive chains coupled to the antennas for MIMO communications, voltage sources, power amplifier supply voltage detectors and regulated switches. The components forming the transmit chains include power amplifiers (PA)s each coupled to a corresponding one of the transmit chains for amplifying RF signals of a MIMO communication link and each PA having a supply voltage input. The PA supply voltage detectors each couple to an associated one of the transmit chains to detect changes in an amplitude of the signal thereon and to identify required changes in the supply voltage level of the corresponding PA for transmission of the signal. The regulated switches couple the voltage sources and PAs, and are responsive to each PA's supply voltage detector to switchably couple the supply voltage input of each PA to the voltage sources providing the identified voltage levels during transmission.

Methods are disclosed for forming an antifuse that includes first and second conductive regions having spaced-apart curved portions, with a first dielectric region therebetween, forming in combination with the curved portions a curved breakdown region adapted to switch from a substantially non-conductive initial state to a substantially conductive final state in response to a predetermined programming voltage. A sense voltage less than the programming voltage is used to determine the state of the antifuse as either OFF (high impedance) or ON (low impedance). A shallow trench isolation (STI) region is desirably provided adjacent the breakdown region to inhibit heat loss from the breakdown region during programming. Lower programming voltages and currents are observed compared to antifuses using substantially planar dielectric regions. In a further embodiment, a resistive region is inserted in one lead of the antifuse with either planar or curved breakdown regions to improve post-programming sense reliability.

Methods for forming antifuses with curved breakdown regions

An antifuse (') comprises, first () and second (&#x2032;) conductive regions having spaced-apart curved portions (), with a first dielectric region () therebetween, forming in combination with the curved portions () a curved breakdown region () adapted to switch from a substantially non-conductive initial state to a substantially conductive final state in response to a predetermined programming voltage. A sense voltage less than the programming voltage is used to determine the state of the antifuse as either OFF (high impedance) or ON (low impedance). A shallow trench isolation (STI) region () is desirably provided adjacent the breakdown region () to inhibit heat loss from the breakdown region () during programming. Lower programming voltages and currents are observed compared to antifuses () using substantially planar dielectric regions (). In a further embodiment, a resistive region () is inserted in one lead (&#x2032;) of the antifuses (&#x2032;) with either planar () or curved () breakdown regions to improve post-programming sense reliability.

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Scottsdale, AZ, United States of America

Kyle Zukowski