Freescale Semiconductor,inc.

Motorola Corporation

Advanced Micro Devices Corporation

Stmicroelectronics (Crolles 2) Sas

Amd Inc.

Kyle W Patterson

Marilyn I Wright

Kurt H Junker

Mark Douglas Hall

Tab Allen Stephens

Srikanteswara Dakshiina-Murthy

Douglas M Reber

Edward K Theiss

Srikanteswara Dakshina-Murthy

Yves Rody

Christophe Couderc

Corinne Miramond-Collet

In a making a semiconductor device, a patterning stack above a conductive material that is to be etched has a patterned photoresist layer that is used to pattern an underlying a tetraethyl-ortho-silicate (TEOS) layer. The TEOS layer is deposited at a lower temperature than is conventional. The low temperature TEOS layer is over an organic anti-reflective coating (ARC) that is over the conductive layer. The low temperature TEOS layer provides adhesion between the organic ARC and the photoresist, has low defectivity, operates as a hard mask, and serves as a phase shift layer that helps, in combination with the organic ARC, to reduce undesired reflection.

Semiconductor device having an organic anti-reflective coating (ARC) and method therefor

For cases where one edge of a design feature is to be printed through a shifter mask and another one is to be printed through a binary trim mask, and where no upsizing can be performed due to the local density of the design, it is proposed to add shifters with respect to the shifter mask in such a way that all the edges are printed by the phase shift mask.

Printing of design features using alternating PSM technology with double mask exposure strategy

In the fabrication of semiconductor devices using the PECVD process to deposit hardmask material such as amorphous carbon, structure and process are described for reducing migration of species from the amorphous carbon which can damage an overlying photoresist. In one embodiment useful to 248 nm and 193 nm photolithography exposure wavelengths, amorphous carbon is plasma-deposited on a substrate to pre-defined thickness and pre-defined optical properties. A SiON layer is combined with a silicon-rich oxide layer, a silicon-rich nitride layer or a TEOS layer to create a capping layer resistant to species-migration. Layers are formulated to pre-determined thicknesses, refractive indices and extinction coefficients. The capping stacks constitute an effective etch mask for the amorphous carbon; and the hardmask properties of the amorphous carbon are not compromised. The disclosure has immediate application to fabricating polysilicon gates.

Capping layer for reducing amorphous carbon contamination of photoresist in semiconductor device manufacture; and process for making same

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Froges, France

Kyle W Patterson