Texas Instruments Corporation

Kyle McPherson

Qi-Zhong Hong

Abbas Ali

Young-Joon Park

Dhishan Kande

A method of fabricating an integrated circuit (IC) includes depositing an aluminum-containing metal interconnect layer at a first temperature over a semiconductor device having a plurality of transistors. The metal interconnect layer is annealed at a maximum annealing temperature that is less than the first temperature. The metal interconnect layer is patterned after the annealing, thereby interconnecting the transistors.

Metal interconnect processing for an integrated circuit metal stack

A method of fabricating an integrated circuit (IC) includes forming a metal interconnect stack on substrate that includes a plurality of product die each having a plurality of transistors connected together to implement a circuit function. The forming the metal interconnect stack includes depositing a metal interconnect layer comprising aluminum on a barrier layer at a first temperature. After depositing the metal interconnect layer, the metal interconnect stack is annealed in a non-oxidizing ambient at a maximum annealing temperature that is&#x3c;the first temperature. After the annealing, a pattern is formed on the metal interconnect layer, and at least the metal interconnect layer is etched.

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Lucas, TX, United States of America

Kyle McPherson