Advanced Micro Devices Corporation

Kyle David Whittle

Russell J Schreiber

Arijit Banerjee

A system and method for efficiently resetting data stored in a memory array are described. In various implementations, an integrated circuit includes a memory for storing data, and a processing unit that generates access requests for the data stored in the memory. When access circuitry of the memory array begins a reset operation, it reduces a power supply voltage level used by memory bit cells in a column of the array to a value less than a threshold voltage of transistors. Therefore, the p-type transistors of the bit cells do not contend with the write driver during a write operation. The access circuitry provides the reset data on the write bit lines, and asserts each of the write word lines of the memory array. To complete the write operation, the access circuitry returns the power supply voltage level from below the threshold voltage level to an operating voltage level.

Rapid tag invalidation circuit

A read path for reading data from a memory includes a sense amplifier having data (SAT) and data complement (SAC) output nodes and a latch. The latch includes an input tri-state inverter including first and second PMOS transistors connected between VDD and an intermediate node, and first and second NMOS transistors connected between VSS and the intermediate node. A gate connection of the first PMOS and NMOS transistors is connected to the SAT node; a gate connection of the second PMOS transistor is connected to a sense amplifier enable complement input; and a gate connection of the second NMOS transistor is connected to a sense amplifier enable input. The latch also includes an output driver with an input connected to the intermediate node and an output connected to a data output node. The latch thus has two gate delays between the SAT node and the data output node.

Growing community of inventors

Fort Collins, CO, United States of America

Kyle David Whittle