Micron Technology Incorporated

Kyle B Wheeler

Richard Cameron Murphy

Troy A Manning

Timothy P Finkbeiner

Sanjay Tiwari

Jeremiah James Willcock

Jason T Zawodny

Dean A Klein

John D Leidel

Kelley D Dobelstein

Examples of the present disclosure provide apparatuses and methods related to generating and executing a control flow. An example apparatus can include a first device configured to generate control flow instructions, and a second device including an array of memory cells, an execution unit to execute the control flow instructions, and a controller configured to control an execution of the control flow instructions on data stored in the array.

Generating and executing a control flow

One example of the present disclosure includes performing a comparison operation in memory using a logical representation of a first value stored in a first portion of a number of memory cells coupled to a sense line of a memory array and a logical representation of a second value stored in a second portion of the number of memory cells coupled to the sense line of the memory array. The comparison operation compares the first value to the second value, and the method can include storing a logical representation of a result of the comparison operation in a third portion of the number of memory cells coupled to the sense line of the memory array.

Comparison operations in memory

The present disclosure includes apparatuses and methods related to bank coordination in a memory device. A number of embodiments include a method comprising concurrently performing a memory operation by a threshold number of memory regions, and executing a command to cause a budget area to perform a power budget operation associated with the memory operation.

Memory power coordination

Examples of the present disclosure provide apparatuses and methods for determining a data storage layout. An example apparatus comprising a first address space of a memory array comprising a first number of memory cells coupled to a plurality of sense lines and to a first select line. The first address space is configured to store a logical representation of a first portion of a value. The example apparatus also comprising a second address space of the memory array comprising a second number of memory cells coupled to the plurality of sense lines and to a second select line. The second address space is configured to store a logical representation of a second portion of the value. The example apparatus also comprising sensing circuitry configured to receive the first value and perform a logical operation using the value without performing a sense line address access.

Data storage layout

Examples of the present disclosure provide apparatuses and methods related to performing a sort operation in a memory. An example apparatus might include a a first group of memory cells coupled to a first sense line, a second group of memory cells coupled to a second sense line, and a controller configured to control sensing circuitry to sort a first element stored in the first group of memory cells and a second element stored in the second group of memory cells by performing an operation without transferring data via an input/output (I/O) line.

Sort operation in memory

The present disclosure includes apparatuses and methods related to a memory device as the store to program instructions. An example apparatus comprises a memory device having an array of memory cells and sensing circuitry coupled to the array. The sensing circuitry includes a sense amplifier and a compute component configured to implement logical operations. A memory controller, coupled to the array and the sensing circuitry is configured to receive a block of instructions including a plurality of program instructions. The memory controller is configured to store the block of instructions in the array and retrieve program instructions to perform logical operations on the compute component.

Apparatuses and methods for memory device as a store for program instructions

Apparatuses and methods related to memory bank power coordination in a memory device are disclosed. A method for memory bank power coordination may include concurrently performing a memory operation by a threshold number of memory regions, such as banks or subarrays, and executing a command to cause a budget area, such as a register, to perform a power budget operation associated with the memory operation. The threshold number of memory regions may be set based at least in part on a threshold power consumption value, and the number of memory regions to concurrently perform an operation may be controlled by a bank arbiter. A counter having a value representing the threshold number of memory regions may be decremented while performing an operation or incremented upon completion of an operation associated with one of the memory regions. A number of the memory regions may be selected to perform a processing-in-memory operation.

Memory bank power coordination including concurrently performing a memory operation in a selected number of memory regions

A length of a longest element can be determined in a memory device. An example method includes determining, using a controller to control sensing circuitry, a length of a longest element of a plurality of variable length elements of a vector stored in a memory array. The determination of the length of the longest element can include performing a number of AND operations, shift operations, and invert operations.

Longest element length determination in memory

Examples of the present disclosure provide apparatuses and methods for multiple endianness compatibility. An example method comprises receiving a plurality of bytes and determining a particular endianness format of the plurality of bytes. The method can include, responsive to determining the particular endianness format is a first endianness format, reordering bits of each byte of the plurality of bytes on a bytewise basis, storing the reordered plurality of bytes in an array of memory cells, and adjusting a shift direction associated with performing a number of operations on the plurality of bytes stored in the array. The method can include, responsive to determining the particular endianness format is a second endianness format, storing the plurality of bytes in the array without reordering bits of the plurality of bytes.

Multiple endianness compatibility

Examples of the present disclosure provide apparatuses and methods for multiple endianness compatibility. An example method comprises receiving a plurality of bytes in a non-bit-sequential format. The method includes reordering the bits in each byte of the plurality of bytes such that the plurality of bytes are arranged in a bit-sequential format.

The apparatuses and methods related to a memory device as the store to program instructions. An example apparatus comprises a memory device having an array of memory cells and sensing circuitry coupled to the array. The sensing circuitry includes a sense amplifier and a compute component configured to implement logical operations. A memory controller, coupled to the array and the sensing circuitry is configured to receive a block of instructions including a plurality of program instructions. The memory controller is configured to store the block of instructions in the array and retrieve program instructions to perform logical operations on the compute component.

Growing community of inventors

Meridian, ID, United States of America

Kyle B Wheeler