Micron Technology Incorporated

Other

Kyle B Campbell

Irina V Vasilyeva

Kyuchul Chong

Vishwanath Bhat

Farrell Martin Good

Kevin R Shea

Hyun Sik Kim

Gurpreet S Lugani

Mario J Di Cino

Alex Kogan

Christopher Locke

Aaron W Freese

William M Brewer

Jeffrey Allen Campbell

Kevin P Campbell

Thomas Judson Campbell

An apparatus includes fin structures comprising individual levels of a conductive material having elongated portions extending in a first horizontal direction, first conductive lines extending in a second horizontal direction transverse to the first horizontal direction, and second conductive lines extending in a vertical direction transverse to each of the first horizontal direction and the second horizontal direction. At least portions of the first conductive lines are aligned vertically. The apparatus also includes horizontal capacitor structures comprising the conductive material of the fin structures and access devices proximate intersections of the first conductive lines and the second conductive lines. The access devices comprise the conductive material of the fin structures. Memory devices, electronic systems, and methods of forming the apparatus are also disclosed.

Apparatuses including capacitors and related systems

A method of forming an array comprising using two different composition masking materials in forming a pattern of spaced repeating first features of substantially same size and substantially same shape relative one another. A pattern-interrupting second feature of at least one of different size or different shape compared to that of the first features is within and interrupts the pattern of first features. The pattern of the first features with the pattern-interrupting second feature are translated into lower substrate material that is below the first features and the pattern-interrupting second feature. Material of the first features and of the pattern-interrupting second feature that is above the lower substrate material is removed at least one of during or after the translating. After the removing, the pattern-interrupting second feature in the lower substrate material is used as a reference location to reckon which of the two different composition masking materials was used to make first spaces between the first features in an analysis area in the material that was above the lower substrate material or which of the two different composition masking materials was used to make second spaces between the first features in the analysis area that alternate with the first spaces. Structure independent of method is disclosed.

Integrated circuit, construction of integrated circuitry, and method of forming an array

Apparatuses including stacked horizontal capacitor structures and related methods, memory devices, and electronic systems

A method of forming a semiconductor structure. The method comprises forming a protective portion of a liner on at least a portion of stack structures on a substrate. The protective portion comprises a material formulated to adhere to the stack structures. A conformal portion of the liner is formed on the protective portion of the liner or on the protective portion of the liner and exposed materials of the stack structures. At least one of the protective portion and the conformal portion does not comprise aluminum. Additional methods of forming a semiconductor structure are disclosed, as are semiconductor structures including the liners comprising the protective portion and the conformal portion.

Methods of forming devices including multi-portion liners

Devices including multi-portion liners

Methods of forming semiconductor structures including multi-portion liners

Semiconductor structures including multi-portion liners

Some embodiments include methods of forming structures. Spaced-apart features are formed which contain temperature-sensitive material. Liners are formed along sidewalls of the features under conditions which do not expose the temperature-sensitive material to a temperature exceeding 300&#xb0; C. The liners extend along the temperature-sensitive material and narrow gaps between the spaced-apart features. The narrowed gaps are filled with flowable material which is cured under conditions that do not expose the temperature-sensitive material to a temperature exceeding 300&#xb0; C. In some embodiments, the features contain memory cell regions over select device regions. The memory cell regions include first chalcogenide and the select device regions include second chalcogenide. The liners extend along and directly against the first and second chalcogenides.

Methods of forming structures

A conveyor system is provided to limit the vertical fall experienced by a product transported along the conveyor and falling into a collection bin. A sensor in a fixed position relative to the product conveying plane of the conveyor measures product collection height in a collection bin to produce an output signal. A controller dynamically varies the angle between the conveyance plane and the collection bin base plane and the vertical displacement therebetween within a preselected range in order to minimize product damage associated with different fall trajectories from the conveyor into the bin for product. Either the conveyor or the collection bin is pivoted under the command of the controller to accomplish the desired function.

Conveyor system for minimizing product damage during collection

Growing community of inventors

Meridian, ID, United States of America

Kyle B Campbell