Kla-tencor Technologies Corporation

Applied Materials, Inc.

Kla Tencor Corporation

Other

Kyle A Brown

Ady Levy

John Fielden

Mehrdad Nikoonahad

Dan Wack

Gary Bultman

Boris Fishkin

Rodney C Smedt

Matt Hankinson

Suresh Lakkapragada

Ginetto Addiego

Victor Belitsky

Daniel F Kennedy

Tom Osterheld

Boris Fuksshimov

Jeff Beeler

Ibrahim Abdul-Halim

Brian J Brown

David Reese Peale

Ibrahim Abdulhalim

Dieter Mueller

Methods and systems for monitoring semiconductor fabrication processes are provided. A system may include a stage configured to support a specimen and coupled to a measurement device. The measurement device may include an illumination system and a detection system. The illumination system and the detection system may be configured such that the system may be configured to determine multiple properties of the specimen. For example, the system may be configured to determine multiple properties of a specimen including: but not limited to, critical dimension and overlay misregistration; defects and thin film characteristics; critical dimension and defects; critical dimension and thin film characteristics; critical dimension, thin film characteristics and defects; macro defects and micro defects; flatness, thin film characteristics and defects; overlay misregistration and flatness; an implant characteristic and defects; and adhesion and thickness. In this manner, a measurement device may perform multiple optical and/or non-optical metrology and/or inspection techniques.

Methods and systems for determining a critical dimension and overlay of a specimen

Methods and systems for evaluating and controlling a lithography process are provided. For example, a method for reducing within wafer variation of a critical metric of a lithography process may include measuring at least one property of a resist disposed upon a wafer during the lithography process. A critical metric of a lithography process may include, but may not be limited to, a critical dimension of a feature formed during the lithography process. The method may also include altering at least one parameter of a process module configured to perform a step of the lithography process to reduce within wafer variation of the critical metric. The parameter of the process module may be altered in response to at least the one measured property of the resist.

Methods and systems for lithography process control

Methods and systems for monitoring semiconductor fabrication processes are provided. A system may include a stage configured to support a specimen and coupled to a measurement device. The measurement device may include an illumination system and a detection system. The illumination system and the detection system may be configured such that the system may be configured to determine multiple properties of the specimen. For example, the system may be configured to determine multiple properties of a specimen including, but not limited to, critical dimension and overlay misregistration. In this manner, a measurement device may perform multiple optical and/or non-optical metrology and/or inspection techniques.

Methods and systems for monitoring semiconductor fabrication processes are provided. A system may include a stage configured to support a specimen and coupled to a measurement device. The measurement device may include an illumination system and a detection system. The illumination system and the detection system may be configured such that the system may be configured to determine multiple properties of the specimen. For example, the system may be configured to determine multiple properties of a specimen including, but not limited to, a presence of macro and micro defects. In this manner, a measurement device may perform multiple optical and/or non-optical metrology and/or inspection techniques.

Methods and systems for determining a presence of macro and micro defects on a specimen

Runout characterization is performed on a moving body by positioning a light source and optical sensor at a nominal distance from the moving body, with a beam directed from the light source against a surface of the moving body. The reflected light is detected at a sampling rate with the optical sensor as the moving body moves, and a data stream of the measurements over time is stored. In the case where an interferometer is used as the optical sensor, relative distance measurements are made. The data stream is analyzed to detect repeating signatures in the data stream, where the signatures represent features on the surface of the moving body. At least one of the features is selected as a reference, and the data stream is processed into segments based on the reference, where each segment represents one period of motion of the moving body. The data segments are overlaid on top of each other to produce ordered sets of data points within the segments. Each ordered set of data points is individually averaged and reported as repeatable runout. The average of each ordered set of data points is subtracted from the data points of each set to produce normalized ordered sets of data points. The variances within the normalized ordered sets of data points are reported as a measure of the non-repeatable runout of the moving body.

Runout characterization

Methods and systems for monitoring semiconductor fabrication processes are provided. A system may include a stage configured to support a specimen and coupled to a measurement device. The measurement device may include an illumination system and a detection system. The illumination system and the detection system may be configured such that the system may be configured to determine multiple properties of the specimen. For example, the system may be configured to determine multiple properties of a specimen including, but not limited to, a property of a specimen prior to, during, or subsequent to lithography. In this manner, a measurement device may perform multiple optical and/or non-optical metrology and/or inspection techniques.

Methods and systems for determining a property of a specimen prior to, during, or subsequent to lithography

Methods and systems for monitoring semiconductor fabrication processes are provided. A system may include a stage configured to support a specimen and coupled to a measurement device. The measurement device may include an illumination system and a detection system. The illumination system and the detection system may be configured such that the system may be configured to determine multiple properties of the specimen. For example, the system may be configured to determine multiple properties of a specimen including, but not limited to, a thin film characteristic and an electrical property of a specimen. In this manner, a measurement device may perform multiple optical and/or non-optical metrology and/or inspection techniques.

Methods and systems for determining a thin film characteristic and an electrical property of a specimen

Methods and systems for monitoring semiconductor fabrication processes are provided. A system may include a stage configured to support a specimen and coupled to a measurement device. The measurement device may include an illumination system and a detection system. The illumination system and the detection system may be configured such that the system may be configured to determine multiple properties of the specimen. For example, the system may be configured to determine multiple properties of a specimen including, but not limited to, a composition and a thickness. In this manner, a measurement device may perform multiple optical and/or non-optical metrology and/or inspection techniques.

Methods and systems for determining a composition and a thickness of a specimen

Methods and systems for monitoring semiconductor fabrication processes are provided. A system may include a stage configured to support a specimen and coupled to a measurement device. The measurement device may include an illumination system and a detection system. The illumination system and the detection system may be configured such that the system may be configured to determine multiple properties of the specimen. For example, the system may be configured to determine multiple properties of a specimen including, but not limited to, an adhesion characteristic and a thickness. In this manner, a measurement device may perform multiple optical and/or non-optical metrology and/or inspection techniques.

Methods and systems for determining an adhesion characteristic and a thickness of a specimen

Methods and systems for monitoring semiconductor fabrication processes are provided. A system may include a stage configured to support a specimen and coupled to a measurement device. The measurement device may include an illumination system and a detection system. The illumination system and the detection system may be configured such that the system may be configured to determine multiple properties of the specimen. For example, the system may be configured to determine multiple properties of a specimen including, but not limited to, a presence of defects on the specimen and a thin film characteristic of the specimen. In this manner, a measurement device may perform multiple optical and/or non-optical metrology and/or inspection techniques.

Methods and systems for determining a presence of defects and a thin film characteristic of a specimen

Methods and systems for monitoring semiconductor fabrication processes are provided. A system may include a stage configured to support a specimen and coupled to a measurement device. The measurement device may include an illumination system and a detection system. The illumination system and the detection system may be configured such that the system may be configured to determine multiple properties of the specimen. For example, the system may be configured to determine multiple properties of a specimen including, but not limited to, overlay and flatness. In this manner, a measurement device may perform multiple optical and/or non-optical metrology and/or inspection techniques.

Methods and systems for determining overlay and flatness of a specimen

Methods and systems for monitoring semiconductor fabrication processes are provided. A system may include a stage configured to support a specimen and coupled to a measurement device. The measurement device may include an illumination system and a detection system. The illumination system and the detection system may be configured such that the system may be configured to determine multiple properties of the specimen. For example, the system may be configured to determine multiple properties of a specimen including, but not limited to, a thickness of a structure on a specimen and at least one additional property of the specimen. In this manner, a measurement device may perform multiple optical and/or non-optical metrology and/or inspection techniques.

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Irvine, CA, United States of America

Kyle A Brown