Samsung Electronics Co., Ltd.

Kyeongtea Bang

Hakyoung Kim

Dougyong Sung

Keonwoo Kim

Seungwon Shin

Byeongsang Kim

Dongyun Yeo

Eungsu Kim

Hyanjung Lee

Heewon Min

Kyeongseok Jeong

A plasma processing apparatus includes a chamber; a support member in the chamber; a window plate at an upper portion of the chamber and including a window plate body and a fastening hole, wherein the fastening hole includes a lower fastening hole portion and an upper fastening hole portion. and a gas injector including a first body having a plurality of distribution nozzles and a second body having an accommodating groove to which the first body is fastened and a plurality of injection nozzles. The second body includes a first portion disposed inside the upper fastening hole portion, a second portion disposed inside the lower fastening hole portion, and a third portion disposed below the window plate. The second portion of the second body includes a gas hole extending from the accommodating groove to an external side surface of the second portion of the second body.

Plasma processing apparatus

An electrostatic chuck includes a chuck plate configured to mount a substrate, an insulation pillar provided outside the chuck plate, the insulation pillar having a pin hole formed therein, a first movable ring provided on the insulation pillar, surrounding a side of the chuck plate, a second movable ring configured to cover at least a part of an upper portion of the first movable ring, and a driving pin configured to move in the pin hole of the insulation pillar in a vertical direction, the driving pin overlapped by at least a part of the first movable ring and at least a part of the second movable ring in the vertical direction. The driving pin is configured to drive the first movable ring and the second movable ring in the vertical direction or to drive the second movable ring in the vertical direction.

Electrostatic chuck and substrate processing apparatus including the same

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Hwaseong-si, South Korea

Kyeongtea Bang