Samsung Electronics Co., Ltd.

Korea University Research and Business Foundation

Kyeongmi Lee

Seungchul Kwon

Joona Bang

Shi-yong Yi

Eunsung Kim

Eun Sung Kim

Shiyong Yi

Jeong Ju Park

Jeongju Park

Sanghoon Woo

A method of forming fine patterns includes forming a mask on an etching target, forming an anti-reflective layer on the mask, forming fixing patterns such that top surfaces of the anti-reflective layer and fixing patterns are exposed, forming a block copolymer layer including first and second polymer blocks, and phase-separating the block copolymer layer to form first patterns and second patterns on the anti-reflective layer and the fixing patterns. The first and second patterns include the first and second polymer blocks, respectively. The anti-reflective layer has a neutral, i.e., non-selective, interfacial energy with respect to the first and second polymer blocks. The fixing patterns have a higher interfacial energy with respect to the first polymer block than the second polymer block.

Methods of forming fine patterns

A block copolymer includes a first polymer block and a second polymer block having different structures, and one of the first polymer block and the second polymer block has a halogen-substituted structure.

Block copolymer and method of manufacturing integrated circuit device using the same

Growing community of inventors

Suwon-si, South Korea

Kyeongmi Lee