Lg Display Co., Ltd.

KyeongJu Moon

Seunghyo Ko

Nuri On

A thin film transistor includes an active layer of an oxide semiconductor, a gate electrode provided on or under the active layer while being spaced apart from the active layer and overlapping with at least a portion of the active layer, and a gate insulating film between the active layer and the gate electrode, wherein the active layer includes copper (Cu).

Thin film transistor array, fabrication method thereof, and display apparatus comprising the thin film transistor

Disclosed is a thin film transistor array comprising a substrate, a first thin film transistor on the substrate, and a second thin film transistor on the substrate, wherein the first thin film transistor includes a first active layer including an oxide semiconductor on the substrate, the first active layer includes a first channel portion, a first conductor portion, and a first middle portion between the first channel portion and the first conductor portion, the second thin film transistor includes a second active layer including an oxide semiconductor on the substrate, the second active layer includes a second channel portion, a second conductor portion, and a second middle portion between the second channel portion and the second conductor portion, and resistivity of the first conductor portion of the first thin film transistor is greater than resistivity of the second conductor portion of the second thin film transistor.

Growing community of inventors

Paju-si, South Korea

KyeongJu Moon