Leland Stanford Junior University

Other

Kyeongjae Cho

Takako Okada

Robert W Dutton

Hiroshi Ohtani

Hideki Takada

James O'Keeffe

Sinji Onga

Shu Peng

Yoshinori Asahi

A method to electronically modulate the energy gap and band-structure of semiconducting carbon nanotubes is proposed. Results show that the energy gap of a semiconducting nanotube can be narrowed when the nanotube is placed in an electric field perpendicular to the tube axis. Such effect in turn causes changes in electrical conductivity and radiation absorption characteristics that can be used in applications such as switches, transistors, photodetectors and polaron generation. By applying electric fields across the nanotube at a number of locations, a corresponding number of quantum wells are formed adjacent to one another. Such configuration is useful for Bragg reflectors, lasers and quantum computing.

Band-structure modulation of nano-structures in an electric field

Nanotubes and nanotube-based devices are implemented in a variety of applications. According to an example embodiment of the present invention, a nanotube is doped with an impurity atom and used to detect the presence of a particular molecular species as a function of the particular molecular species bonding to the impurity atom. In one implementation, the doped nanotube responds electrically to the bonding of the particular molecular species to the impurity atom. With this approach, nanotubes such as single-walled carbon nanotubes can be doped to respond selectively to one or more types of molecular species.

Carbon nanotube sensors

To reduce dislocations produced in the formation of shallow trench isolation regions in a semiconductor substrate, the semiconductor substrate is annealed in N ambient pressure with an O partial pressure of less than about 10 at a temperature between about 950 C.&deg; and about 1055 C.&deg;. In addition, a method to reduce crystalline defects in semiconductor manufacturing in which a metal is deposited on an insulator to form metal silicide is provided. The method provides for etching the insulator to create an overhang by an amount equal to at least one half of the thickness of the metal, thereby creating a void between the surface of the semiconductor substrate and the insulator. The metal is deposited on the first insulator and on the surface of the semiconductor substrate and the semiconductor substrate is heated thereby forming metal silicide on the surface of the substrate.

Semiconductor device manufacturing method to reduce process induced stress and crystalline defects

Growing community of inventors

Union City, CA, United States of America

Kyeongjae Cho