Skhynix Inc.

Hynix Semiconductor Inc.

Kyeong Rho Kim

Jeong Soon Kwak

Young Ho Kim

Joo Young Lee

Myung Suk Lee

Kyung Hoon Lee

Hyun Jun Kim

Eui Jin Kim

Wun Mo Yang

Ju Yong Shin

Yang Gi Moon

Provided herein may be a storage device and a method of operating the same. A memory controller for controlling a memory device including a plurality of memory blocks having improved read performance may include a random read workload control unit configured to control a state of a random read workload such that the random read workload is in any one of a set state and a clear state depending on a random read count obtained by counting a number of random read requests that are inputted from an external host; and a random read processing unit configured to retrieve a physical address corresponding to a logical address of the respective random read requests depending on the state of the random read workload.

Storage device for migrating data based on random read workload and operating method of the same

Provided herein may be a storage device and a method of operating the same. A memory controller for controlling a memory device including a plurality of memory blocks having improved read performance may include a random read workload control, unit configured to control a state of a random read workload such that the random read workload is in any one of a set state and a clear state depending on a random read count obtained by counting a number of random read requests that are inputted from an external host; and a random read processing unit configured to retrieve a physical address corresponding to a logical address of the respective random read requests depending on the state of the random read workload.

Memory controller to source logical to physical address mappings based on random read count

A data storage device includes a first memory device, a second memory device including a system region and a buffer region and a controller suitable for controlling the first memory device in response to a request from a host device, and allocating the system region and the buffer region according to an attribute of data involved with the request from the host device.

Data storage device capable of efficiently using a working memory device

An operating method of a data storage device including nonvolatile memory devices includes making a victim block list for victim blocks for which a merge operation is to be performed and copying valid pages of the victim bocks to a merge block. The method also includes determining whether there is a victim block which has an erase-held valid page selectively erasing the victim blocks included in the victim block list, according to which victim blocks have an erase-held page, and updating the victim block list according to which victim blocks are erased.

Data storage device for holding erasure of victim block having valid page copied to merge block and method of operating the same

An operating method of a data storage device including a plurality of nonvolatile memory devices includes the steps of: mapping physical addresses of the nonvolatile memory devices into logical addresses; reflecting environmental factors to remap a physical address into a logical address requested to be accessed; and performing an interleaving operation for the nonvolatile memory devices using the remapped physical address.

Data storage device and operating method thereof

A solid state storage system includes a flash memory region comprising a plurality of memory blocks and a plurality of replacement blocks corresponding to error-occurred blocks when errors occur in the memory blocks; and a memory controller configured to perform a control operation to replace the error-occurred blocks with the replacement blocks, wherein the error-occurred blocks comprise correctable blocks and uncorrectable blocks, and wherein the memory controller determines whether the error-occurred blocks are the correctable blocks or the uncorrectable blocks and controls zones of the replacement blocks, replaced in correspondence to the correctable blocks, to be allocated a plurality of times.

Solid state storage system for controlling reserved area and method of controlling the same

A semiconductor storage system includes a memory controller that classifies a memory block of a memory area into a data block and a buffer block. The buffer block corresponds to the data block. The memory controller compares the number of free pages of both the data block and the buffer block with the number of valid pages of the data block and the buffer block during mergence in order to select the merged target block. Depending on the result of the comparison, either the data block or the buffer block is selected as the merged target block.

Semiconductor storage system for decreasing page copy frequency and controlling method thereof

Solid-state storage systems and methods are provided for controlling a wear leveling process for uniform use of the memory cells that replaces worn memory blocks with less frequently used memory blocks. The wear leveling process is performed by changing the physical locations of the storage cells within each memory zone or plane. Reference values of target memory block erase counts and worn memory block erase counts are used for searching target memory blocks to be used as replacements.

Solid state storage systems and methods for flexibly controlling wear leveling

The presented solid state storage system provides an efficient manner of processing read and write operations in a memory block that has a faulty page of memory within it. The solid state storage system includes a flash memory area and a memory controller. The memory controller stores link information into a buffer, allocates a first temporary physical block to resume operations of the bad block past the first bad page, updates and stores mapping information associated with the remaining portions of the bad block past the first bad page, and merges together those valid pages from among the bad block into a final physical block by merging together all prior successfully operated valid pages from among the bad block with any subsequently successfully operated valid pages which are associated with successful operations subsequently to the failure in the first bad page of the bad block.

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Gyeonggi-do, South Korea

Kyeong Rho Kim