Samsung Electronics Co., Ltd.

Samsung Electro-mechanics Co., Ltd.

Samsung Led Co., Ltd.

Kyeong Ik Min

Masayoshi Koike

Min Gyu Kim

Sang Ho Yoon

Hyung Jin Kim

Myong Soo Cho

Hee Seok Park

Sung Hwan Jang

Seong Suk Lee

Dong Yeoul Lee

Chang Sub Lee

Chang Mo Lee

Young Min Park

Hyun Jung Kim

Ki Tae Park

Ki Yong Lee

Hak Hwan Kim

Sang Bum Lee

Won Hoe Koo

Gil Han Park

Seon Young Myoung

Ki Un Lee

Jung Kyung Kim

Sang Duk Yoo

Myoung Sik Jung

Provided is a condensing lens condensing a light from a light source, and a lighting device equipped with the condensing lens. The condensing lens may enable a light to be selectively incident upon a plurality of first incident portions based on an emission angle, may totally-reflect, using a second incident portion, the light refracted by the plurality of first incident portions, and may refract the totally-reflected light using a third incident portion.

Condensing lens and lighting device equipped with said condensing lens

A light emitting device (LED) package and a manufacturing method thereof are provided. The LED package includes a circuit board comprising at least one device region, a plurality of electrode regions, at least one first thermal via exposed through upper and lower surfaces of the at least one device region, and a plurality of second thermal vias exposed through upper and lower surfaces of the plurality of electrode regions; at least one first thermal pad bonded to the upper surface of the at least one device region and connected to the first thermal via; at least one LED mounted on the at least one first thermal pad; a plurality of first electrode pads bonded to the upper surface of the electrode region and connected to the second thermal vias; and a plurality of wires to connect the at least one LED with the plurality of first electrode pads.

Light emitting device package and manufacturing method thereof

There are provided an optical lens and a light source module, and a street lamp having the same. The optical lens includes a concave dome shaped inner surface formed to have a similarly-oval shaped lower surface, and formed to include a plurality of light incident surfaces formed to be stepped along the inner surface thereof and stepped surfaces connecting the plurality of light incident surfaces to one another; and an outer surface formed to surround the inner surface.

Optical lens and light source module, and street lamp having the same

An optical lens includes: a lens body having an outer surface extending in a longitudinal direction (a first direction) and formed to be symmetrical in a lateral direction (a second direction); and a cavity formed at a lower portion of the lens body and having inner side faces asymmetrical in the longitudinal direction.

Optical lens, LED module having the optical lens, and lighting apparatus having the LED module

A nitride semiconductor light emitting device array, which includes a dielectric layer formed on a first conductivity lower nitride semiconductor layer, having a plurality of windows. Each of a plurality of hexagonal pyramid light emission structures is grown from a surface of the first conductivity lower nitride semiconductor layer exposed through each of the windows and onto a peripheral area of the window of the dielectric layer. Each of the hexagonal pyramid light emission structures includes a first conductivity upper nitride semiconductor layer, an active layer and a second conductivity nitride semiconductor layer formed in their order. The windows are disposed in such a triangular arrangement that side surfaces of the adjacent hexagonal pyramid light emission structures face each other. Also, a distance between bases of the adjacent hexagonal pyramid light emission structures is less than 0.3 times an interval between centers of the windows of the adjacent hexagonal pyramid light emission structures.

Nitride semiconductor light emitting device array

A method for selectively growing a nitride semiconductor, in which a mask is formed, with an opening formed therein, on a nitride semiconductor layer. A nitride semiconductor crystal is selectively grown on a portion of the nitride semiconductor layer exposed through the opening in the mask, the nitride semiconductor crystal shaped as a hexagonal pyramid and having crystal planes inclined with respect to a top surface of the nitride semiconductor. Here, the nitride semiconductor crystal has at least one intermediate stress-relieving area having crystal planes inclined at a greater angle than those of upper and lower areas of the nitride semiconductor crystal, the intermediate stress-relieving area relieving stress which occurs from continuity in the inclined crystal planes.

Selective growth method, nitride semiconductor light emitting device and manufacturing method of the same

Disclosed are a nitride based semiconductor device, including a high-quality GaN layer formed on a silicone substrate, and a process for preparing the same. A nitride based semiconductor device in accordance with the present invention comprises a plurality of nanorods aligned and formed on the silicone substrate in the vertical direction; an amorphous matrix layer filling spaces between nanorods so as to protrude some upper portion of the nanorods; and a GaN layer formed on the matrix layer.

Nitride based semiconductor device using nanorods and process for preparing the same

The invention relates to a monolithic white light emitting device using wafer bonding or metal bonding. In the invention, a conductive submount substrate is provided. A first light emitter is bonded onto the conductive submount substrate by a metal layer. In the first light emitter, a p-type nitride semiconductor layer, a first active layer, an n-type nitride semiconductor layer and a conductive substrate are stacked sequentially from bottom to top. In addition, a second light emitter is formed on a partial area of the conductive substrate. In the second light emitter, a p-type AlGaInP-based semiconductor layer, an active layer and an n-type AlGaInP-based semiconductor layer are stacked sequentially from bottom to top. Further, a p-electrode is formed on an underside of the conductive submount substrate and an n-electrode is formed on a top surface of the n-type AlGaInP-based semiconductor layer.

White light emitting device

Disclosed are a nitride based semiconductor device, including a high-quality GaN layer formed on a silicon substrate, and a process for preparing the same. A nitride based semiconductor device in accordance with the present invention comprises a plurality of nanorods aligned and formed on the silicone substrate in the vertical direction; an amorphous matrix layer filling spaces between nanorods so as to protrude some upper portion of the nanorods; and a GaN layer formed on the matrix layer.

The present invention provides methods for manufacturing a nitride layer and a vertical nitride semiconductor light emitting device. In manufacturing the nitride layer according to the invention, a sapphire substrate is prepared. A buffer layer made of a material having a melting point and a thermal conductivity higher than those of nitride is formed on the sapphire substrate. Also, the nitride layer is formed on the buffer layer. Then a laser beam is irradiated to an underside of the sapphire substrate to remove the nitride layer. According to the invention, the nitride layer is made of a material having a composition expressed by AlxInGaN, where 0&#x2266;x&#x2266;1, 0&#x2266;y&#x2266;1, and 0&#x2266;x+y&#x2266;1. In addition, the buffer layer is made of SiC.

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Seoul, South Korea

Kyeong Ik Min