Samsung Electronics Co., Ltd.

Sejong University

Kwonyoung Kim

Jungwoo Kim

Won-Jun Lee

Dongho Ahn

Changyup Park

Jongwan Kim

Inkyeong Yoo

Donggeon Gu

Yewon Kim

Okhyeon Kim

Byeonghak Kang

A method of forming a germanium antimony tellurium (GeSbTe) layer includes forming a germanium antimony (GeSb) layer by repeatedly performing a GeSb supercycle; and forming the GeSbTe layer by performing a tellurization operation on the GeSb layer, wherein the GeSb supercycle includes performing at least one GeSb cycle; and performing at least one Sb cycle, the GeSbTe has a composition of GeSbTe, in which a and b satisfy the following relations: −0.2<a<0.2 and −0.5<b<0.5.

Method of forming germanium antimony tellurium film

A film for writing may include: a rough layer, including a non-flat surface, configured to transmit a first light beam and a second light beam of different wavelength bands; and/or a photonic crystal layer, arranged on the rough layer, configured to transmit the first light beam and configured to reflect the second light beam. A film for writing, which transmits visible rays, may include: a non-flat layer. A difference between a maximum thickness and a minimum thickness of the non-flat layer may be from about 220 nanometers (nm) to about 2 microns (&#x3bc;m). A film for writing may include: a first layer; and/or a second layer on the first layer. The first layer may be configured to transmit first and second light beams of different frequency bands. The second layer may be configured to transmit the first light beam, but to reflect the second light beam.

Films for writing and display apparatuses including the same

Growing community of inventors

Seoul, South Korea

Kwonyoung Kim