Samsung Electronics Co., Ltd.

Kwonsang Seo

Jungmin Ko

Sangki Nam

Seungbo Shim

Kuihyun Yoon

Byungjo Kim

Younghyun Jo

Seunghan Baek

Tae-Hyun Kim

Sang Ki Nam

Kangmin Jeon

Namkyun Kim

Dongseok Han

Jungmo Yang

Seungbin Ahn

Changheon Lee

A plasma confinement ring includes a lower ring, an upper ring on the lower ring, and a connection ring extended to connect the lower ring to the upper ring. The lower ring includes a lower center hole vertically penetrating the lower ring at a center of the lower ring and at least one slit penetrating the lower ring in a region outside the lower center hole. The slit is structured to pass a more amount of air or gas at a first portion closer to the center of the lower ring than at a second portion farther from the center of the lower ring.

Plasma confinement ring, semiconductor manufacturing apparatus including the same, and method of manufacturing a semiconductor device using the same

Provided are a substrate processing apparatus and a method of manufacturing a semiconductor device using the same. The substrate processing apparatus includes a lower electrode assembly, an upper electrode assembly disposed on the lower electrode assembly, and a plasma processing region between the lower electrode assembly and the upper electrode assembly. The lower electrode assembly includes a substrate support supporting a substrate, a coupling ring assembly surrounding the substrate support, an edge ring on the coupling ring assembly, and at least one upper contact pad contacting a lower surface of the edge ring and contacting at least one of the substrate support and the coupling ring assembly, the at least one upper contact pad being conductive. The coupling ring assembly includes a coupling ring and a conductive side contact pad in contact with a side surface of the substrate support and an inner surface of the coupling ring.

Substrate processing apparatus and method of manufacturing semiconductor device using the same

An upper electrode used for a substrate processing apparatus using plasma is provided. The upper electrode includes a bottom surface including a center region and an edge region having a ring shape and surrounding the center region, a first protrusion portion protruding toward plasma from the edge region and having a ring shape, wherein the first protrusion portion includes a first apex corresponding to a radial local maximum point toward the plasma, and a first distance, which is a radial-direction distance between the first apex and a center axis of the upper electrode, is greater than a radius of a substrate.

Upper electrode and substrate processing apparatus including the same

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Suwon-si, South Korea

Kwonsang Seo