Hynix Semiconductor Inc.

Skhynix Inc.

Hyundai Electronics Industries Co. Ltd.

Other

Soulbrain Co., Ltd.

Kwon Hong

Ki-Hong Lee

Moon-Sig Joo

Eun Shil Park

Jae Hyoung Koo

Kwan-Yong Lim

Sung-Jin Whang

Jae Hong Kim

Hyung-Bok Choi

Bo-Min Seo

Kyoung-Eun Chang

Dae-Gyu Shin

Ki Hong Lee

Kee-Jeung Lee

Kyung-Woong Park

Sun-Hwan Hwang

Won-Kyu Kim

Min Sik Jang

Hyung-Soon Park

Gyu-Hyun Kim

Yong-Sik Yu

Deok Sin Kil

Ji-Hoon Ahn

Ji-Hye Han

Sung-Hyuk Cho

Jung-Yeon Lim

Min-Soo Kim

Geun Su Lee

Seung Ho Pyi

Heung-Jae Cho

Dong Ho Lee

Tae-Yoon Kim

Seung-Jin Yeom

Se Aug Jang

Jong Min Lee

Se-Aug Jang

Ki-Seon Park

Deok-Sin Kil

Jung-Woo Park

Kee Jeung Lee

Min-Gyu Sung

Yong-Soo Kim

Beom-Yong Kim

Hong-Seon Yang

Seung Jin Yeom

Seung-Woo Shin

Cha-Deok Dong

Jae-Wan Park

Jin-Ki Jung

Heung Jae Cho

Eun-Shil Park

Ji Hye Han

Keun Chul Lee

Se Hun Kang

Hyung Soon Park

Yong Soo Kim

Jin-Uk Lee

Kwan Yong Lim

Hyung-Hwan Kim

Yong Sik Yu

Hong Seon Yang

Ja Chun Ku

Jae Mun Kim

Seung-Ho Pyi

Seung-Ryong Lee

Young Seok Kwon

Sung Jin Whang

Yong-Seok Eun

Ho Jin Cho

Young Jung Kim

Chung-Tae Kim

Hee Soo Kim

Young-Bang Lee

Min Gyu Sung

Heung-Sik Kwak

Hyo-Sang Kang

Sung-Ki Park

Hyung Hwan Kim

Beom Yong Kim

Tae Yoon Kim

Tae-Yeon Jung

Hyeong-Jin Nor

Jung-Hun Lim

Chan-Keun Jung

Seung Ryong Lee

A surface treatment method for a semiconductor device includes providing a substrate where a plurality of projected patterns are formed, forming a hydrophobic coating layer on a surface of each of the plurality of projected patterns, rinsing the substrate with deionized water, and drying the substrate, wherein the hydrophobic coating layer is formed using a coating agent that includes phosphate having more than one hydrocarbon group, phosphonate having more than one hydrocarbon group, or a mixture thereof.

Surface treatment method for semiconductor device

A method for fabricating a semiconductor device includes supplying a first source gas including a germanium (Ge) precursor onto a semiconductor substrate for a first time period, and periodically interrupting the supplying of the first source gas for the first time period to form Ge elements on the semiconductor substrate.

Method for fabricating semiconductor device

A nonvolatile memory device includes a pipe insulation layer having a pipe channel hole, a pipe gate disposed over the pipe insulation layer, a pair of cell strings each having a columnar cell channel, and a pipe channel coupling the columnar cell channels and surrounding inner sidewalls and a bottom of the pipe channel hole.

Method for fabricating pipe gate nonvolatile memory device

A semiconductor device including a conductive layer, a diffusion barrier layer formed over the conductive layer, including a refractory metal compound, and acquired after a surface treatment, and a metal silicide layer formed over the diffusion barrier layer. The adhesion between a diffusion barrier layer and a metal silicide layer may be improved by increasing the surface energy of the diffusion barrier layer through a surface treatment. Therefore, although the metal silicide layer is fused in a high-temperature process, it is possible to prevent a void from being caused at the interface between the diffusion barrier layer and the metal silicide layer. Moreover, it is possible to increase the adhesion between a conductive layer and the diffusion barrier layer by increasing the surface energy of the conductive layer through the surface treatment.

Semiconductor device and method for fabricating the same

A method for fabricating a semiconductor device, including forming gate patterns over a substrate, forming conductive layer covering top and sidewalls of each gate pattern, forming a metal layer for a silicidation process over the conductive layer, and silicifying the conductive layer and the gate patterns using the metal layer.

A semiconductor device includes a dielectric layer in which zirconium, hafnium, and a IV group element are mixed. A method for fabricating a capacitor includes forming a bottom electrode, forming the dielectric layer and forming a top electrode over the dielectric layer.

A method for forming a silicon oxide film of a semiconductor device is disclosed. The method of forming the silicon oxide film of the semiconductor device includes performing surface processing using an amine-based compound, so that the uniformity and density of the silicon oxide film may be improved.

Method for forming silicon oxide film of semiconductor device

A nonvolatile memory device includes a pipe gate having a pipe channel hole; a plurality of interlayer insulation layers and a plurality of gate electrodes alternately stacked over the pipe gate; a pair of columnar cell channels passing through the interlayer insulation layers and the gate electrodes and coupling a pipe channel formed in the pile channel hole; a first blocking layer and a charge trapping and charge storage layer formed on sidewalls of the columnar cell channels; and a second blocking layer formed between the first blocking layer and the plurality of gate electrodes.

Three dimensional pipe gate nonvolatile memory device

A resistive memory device operable with low power consumption and a memory apparatus and data processing system including the same are provided. The resistive memory includes a chalcogenide compound containing 10 to 60 wt % (atomic weight) of selenium (Se) or tellurium (Te).

Resistive memory device and memory apparatus and data processing system having the same

Nonvolatile pipe gate memory device

The present invention provides an etching composition, comprising a silyl phosphate compound, phosphoric acid and deionized water, and a method for fabricating a semiconductor, which includes an etching process employing the etching composition. The etching composition of the invention shows a high etching selectivity for a nitride film with respect to an oxide film. Thus, when the etching composition of the present invention is used to remove a nitride film, the effective field oxide height (EEH) may be easily controlled by controlling the etch rate of the oxide film. In addition, the deterioration in electrical characteristics caused by damage to an oxide film or etching of the oxide film may be prevented, and particle generation may be prevented, thereby ensuring the stability and reliability of the etching process.

Etching composition and method for fabricating semiconductor device using the same

A non-volatile memory includes a channel layer to extend from a substrate in a vertical direction; a plurality of interlayer dielectric layers and a plurality of gate electrodes to be alternately stacked along the channel layer; and a memory layer to be interposed between the channel layer and each of the gate electrodes, wherein the memory layer comprises a tunnel dielectric layer to contact the channel layer, a first charge trap layer to contact the tunnel dielectric layer and formed of an insulating material, a charge storage layer to contact the first charge trap layer and formed of a semiconducting material or a conductive material, a second charge trap layer to contact the charge storage layer and formed of an insulating material, and a charge blocking layer to contact the second charge trap layer.

Nonvolatile memory device

A three dimensional non-volatile memory structure includes a plurality of interlayer dielectric layers and a plurality of control gates alternately stacked over a substrate, a channel formed to penetrate the plurality of interlayer dielectric layers and the plurality of control gates, a tunnel insulating layer formed to surround the channel, a plurality of floating gates disposed between the plurality of interlayer dielectric layers and the tunnel insulating layer, wherein the plurality of floating gates each have a thickness greater than a corresponding one of the interlayer dielectric layers, and a charge blocking layer disposed between the plurality of control gates and the plurality of floating gates.

Three dimensional non-volatile memory device and method of manufacturing the same

Growing community of inventors

Gyeonggi-do, South Korea

Kwon Hong