Other

Industrial Technology Research Institute

Kwo Ray Chu

Tze T Yang

Han Y Chen

Yi C Tsai

Shih Han Chen

Ching-Fang Yu

Tsun-Hsu Chang

Larry R Barnett

Syh-Yuh Cheng

Chwung-Shan Kou

Chaoen Wang

Ling-Chieh Tai

Trine Y Dawn

Yih S Yeh

Wei-Yuan Chiang

Liming Chen

Ming H Tsao

Larry Roger Barnett

Hung-I Chang

Hezhong Guo

A quasi-optical material treatment apparatus includes a first mirror and a second mirror. The first mirror is arched, and has a focal point in a chamber distance, and a coupling port to receive a high power microwave from an external microwave source that travels along the chamber distance to output a strong field microwave beam. The second mirror and the first mirror jointly form a quasi-optical action chamber and are movable relative to each other to adjust the total chamber distance between the two. A material to be treated may be moved through a focusing zone (about one wavelength of the strong field microwave beam) of the strong field microwave beam to be treated rapidly and evenly.

Quasi-optical material treatment apparatus

The interaction structure with integral coupling and bunching section and method of use of the present invention produces backward wave oscillations in an RF structure which combines ballistic bunching and extended beam-wave interaction in a complex resonator assembly. The complex extended interaction structure includes a five-gap electromagnetically-coupled cavity structure with a coaxial section inserted between the first and second cavities. The first cavity serves as a buncher cavity while the four subsequent cavities serve as energy cavities. In the coaxial section, beam and wave propagate in separate channels. The field in the buncher cavity is coupled to the four subsequent energy extraction cavities through the wave channel between the inner and outer conductors of the coaxial section, while the electron beam drifts along a cylindrical channel cut through the inner conductor of the coaxial section. The complex extended interaction structure of the present invention provides a drift channel (cutoff to the wave) to allow ballistic bunching of electrons. Since the buncher cavity is strongly coupled to the energy extraction cavities, the first gap exerts a large modulating voltage on the electrons, sufficient to produce a tightly bunched electron beam upon entrance into the energy extraction cavities.

Interaction structure with integral coupling and bunching section

A mechanically tunable magnetron injection gun (MIG) provides an annular, relativistic beam of electrons for injection into an axially aligned magnetic field of a gyrotron-class device. The electron emitter encircles a center electrode. Turning a knob adjusts the center electrode's axial position relative to the rest of the cathode. The adjustable center electrode provides an effective means for local field adjustment. The center electrode is located in a particularly sensitive electric field region and adjusts the electric field so as to tune the electron beam from the inside out. Adjusting the center electrode position while the device is in operation is a means for providing mechanical tunability (with respect to beam quality and transverse-to-axial velocity ratio) for the MIG. The mechanical tunability feature provides the MIG with an extra degree of freedom for the optimization of the beam quality, it provides the versatility of operation in a much greater parameter space, it can be used to compensate for machining errors and thermal deformations, and it can provide tunability for single anode MIGs.

Mechanically tunable magnetron injection gun (MIG)

Growing community of inventors

Hsinchu, Taiwan

Kwo Ray Chu