Hyundai Electronics Industries Co. Ltd.

Kweon Hong

Yong Sik Yu

There is disclosed a method of manufacturing a capacitor in a semiconductor device. In order to solve the problems that it is difficult to secure an effective surface area and a misalignment between a capacitor plug and an underlying electrode occurs in a capacitor having a stack structure using a BST dielectric film, the present invention forms a contact layer and a diffusion prevention film within a first contact hole for plug in a plug shape, forms a second contact hole using an oxide film, deposits an underlying electrode material and then removes the oxide film to form an underlying electrode. Therefore, the present invention has outstanding advantages of increasing the effective surface area of an underlying electrode since a process of etching the underlying electrode which could not be etched easily can be omitted, and preventing diffusion of oxygen upon formation of a dielectric thin film since a direct contact of a metal/oxygen diffusion prevention film and the dielectric film can be avoided. As a result, the present invention can improve an electrical characteristic of a capacitor.

Growing community of inventors

Sungnam-shi, South Korea

Kweon Hong