Samsung Electronics Co., Ltd.

Kwanwoo Noh

Sungho Seo

Myungsub Shin

Dongwoo Nam

Yongwoo Jeong

Haesung Jung

Hyunkyu Jang

Hongrak Son

Jeongsu Kim

Wijik Lee

Seongyong Jang

Hyeonjong Song

Hong Rak Son

Youngmin Lee

Changkyu Seol

Hwaseok Oh

Dongmin Shin

Pilsang Yoon

Seonghyeog Choi

JinHyeok Choi

Hyejeong So

Hyuntae Park

Jae Hun Jang

Hanbyeul Na

Mankeun Seo

Youngsuk Ra

A link startup method of a storage device connected to a host through a plurality of lanes includes performing an initialization operation in the storage device; establishing data communication through a connected transmission lane and a connected reception lane among the plurality of lanes; transmitting a high speed link up message to the host through the connected transmission lane of the storage device; and performing a link startup operation in a high speed mode through the connected transmission lane of the storage device and the connected reception lane of the host, based on the high speed link up message transmitted by the storage device.

Storage device for high speed link startup and storage system including the same

A storage device and a storage system including the same are provided. The storage device includes a reference clock pin configured to receive a reference clock signal from a host, a reference clock frequency determination circuitry configured to determine a reference clock frequency from the reference clock signal received through the reference clock pin, and a device controller circuitry configured to perform a high speed mode link startup between the host and the storage device according to the reference clock frequency.

Storage device and storage system including the same

Provided are a memory controller calculating an optimal read level, a memory system including the memory controller, and an operating method of the memory controller. The memory controller includes: a processor configured to control a memory operation on the memory device; and a read level calculation module configured to: receive N counting values corresponding to N read levels generated based on a counting operation on data read by using a plurality of read levels, model at least two cell count functions having selected read levels that are selected from the N read levels as inputs, and the N counting values corresponding to the selected read levels as outputs, and calculate an optimal read level based on an optimal cell count function selected from the at least two cell count functions, wherein N is an integer equal to or greater than four, wherein the N counting values include counting values corresponding to at least four different read levels.

Memory controller calculating optimal read level, memory system including the same, and operating method of memory controller

A method of operating a storage device includes receiving a first bit sequence including a request for changing a data rate from a host according to a first data rate through an input signal pin; sending a second bit sequence including a response to the request for changing a data rate to the host at the first data rate through an output signal pin; and changing the data rate to a second data rate according to whether a tail-of-burst (TOB) indicating an end of the second bit sequence is output.

Storage device adjusting data rate and storage system including the same

A method of operating a storage controller includes receiving raw data indicating a series of bits each corresponding to one of threshold voltage states, performing a first state shaping for reducing a number of first target bits of the series of bits, logical values of the first target bits being equal to a logical value of a target threshold voltage state of the threshold voltage states in a first page of plural pages, generating first indicator data that indicates the first target bits based on the first state shaping, compressing the first indicator data, and storing the compressed first indicator data.

Storage controller compressing indicator data, storage device including the same, and method of operating the same

A nonvolatile memory device includes a plurality of memory cells that have a first state and a second state different from each other. A method of searching a read voltage of the nonvolatile memory device includes determining a number n that represents a number of times a data read operation is performed, selecting n read voltage levels of the read voltage such that a number of read voltage levels is equal to the number of times the data read operation, where the n read voltage levels differ from each other, generating n cell count values by performing n data read operations on the plurality of memory cells using all of the n read voltage levels, and generating an optimal read voltage level of the read voltage by performing a regression analysis based on a first-order polynomial using the n read voltage levels and the n cell count values.

Method of searching read voltage of nonvolatile memory device using regression analysis and method of reading data from nonvolatile memory device using the same

A host controller interface configured to provide interfacing between a host device and a storage device includes processing circuitry; a doorbell register configured to store a head pointer and a tail pointer of one or more first queues; and an entry buffer configured to store a first command from one of the one or more first queues in the entry buffer, wherein the processing circuitry is configured to, determine an order in which the commands of the one or more first queues are to be processed, route the first command to be stored in the entry buffer according to the determined order, and route a first response to be stored in one of one or more second queues.

Host controller interface using multiple circular queue, and operating method thereof

Disclosed is a storage device which includes an interface circuit that exchanges data with a host device, and a power management unit that supplies a power to the interface circuit. The interface circuit includes a first input terminal receiving a first signal from the host device, a second input terminal receiving a second signal complementary to the first signal from the host device, a receive module processing the first signal and the second signal, a squelch circuit detecting levels of the first signal and the second signal, and a reference clock detector detecting whether a reference clock for operating the storage device is received. The power management unit selectively supplies a power to the squelch circuit based on a result of the detection by the reference clock detector.

Storage device configured to change power state based on reference clock from host device and method for operating the same

A storage device capable of performing high-speed link startup and a storage system including the storage device are disclosed. A link startup method of the storage device includes receiving a line-reset signal from a host through a line connected to an input signal pin of the storage device, comparing a length of the received line-reset signal with a first reference time, and performing a link startup operation in a high-speed mode or a low-speed mode between the storage device and the host according to a comparing result.

Link startup method of storage device, and storage device, host and system implementing same

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Seoul, South Korea

Kwanwoo Noh