Samsung Electronics Co., Ltd.

S-printing Solution Co., Ltd.

Kwangwoo Lee

Heewon Lee

Yunjung Lee

Chanha Kim

Sangjin Yoo

Dae-hyun Kim

Jinwook Lee

Jin-hyung Kim

Jinwoo Hong

Seungkyung Ro

Byungchan Park

Jeongkeun Park

Jeongwoo Lee

Jisoo Kim

Yeonji Kim

Suk-Eun Kang

Hyojin Ahn

Juwon Lee

Dongcheul Jang

Heejun Oh

An operating method of a memory controller is provided. The method includes: in a first super block including first blocks of memory chips, storing a first read level with respect to a first block in a first memory as first super block read level (RL) information; storing the first read level in a second memory as first chip RL information corresponding to the first memory chip; during the read operation on the first blocks included in the first super block, controlling the read operation based on the first super block RL information stored in the first memory; and based on a failure occurring in data read from the first block of the first memory chip by using the first super block RL information, controlling the read operation on the first block of the first memory chip based on the first chip RL information stored in the second memory.

Memory controller managing read level information, memory system including the same, and operating method of the memory controller

Provided are a storage device and an operating method of a memory controller. The storage device includes a non-volatile memory that outputs data from selected memory cells based on read voltage information, the read voltage information including a start read voltage, an end read voltage, and a read command. Moreover, the storage device includes a memory controller that determines whether a search region defined by the start read voltage and the end read voltage is within a multi-peak region of a threshold voltage distribution corresponding to a first state of the selected memory cells, based on the search region being within the multi-peak region, change the search region, and based on the search region not being within to the multi-peak region, determine a new read voltage using the search region.

Storage device and operating method of memory controller

There is provided a storage device, which includes: a memory device that includes a plurality of memory blocks, and stores first meta data including first status data and a first parameter in a first memory block among the plurality of memory blocks; and a memory controller that stores second meta data including second status data and second parameters, determines final meta data among a plurality of pieces of meta data including the first meta data and the second status data by comparing a plurality of pieces of status data with the first status data and the second status data, performs parameter confirmation for storing the final meta data in the meta block, and controls the memory device based on a parameter stored in the meta block.

Storage device and method for storing meta data in a distributed manner

Disclosed is an operation method of a controller which is configured to control a nonvolatile memory device. The method includes receiving cell counting data associated with selected memory cells included in the nonvolatile memory device from the nonvolatile memory device, adjusting operation parameters of the nonvolatile memory device based on the cell counting data, performing a valley search operation for the selected memory cells based on the adjusted operation parameters, and performing a read operation for the selected memory cells based on a result of the valley search operation.

Operation method of controller configured to control nonvolatile memory device and operation method of storage device

A storage device includes a non-volatile memory including memory blocks, and a storage controller including a history buffer including plural history read level storage areas corresponding to the memory blocks. The storage controller dynamically adjusts a number of the history read level storage areas allocated to one or more of the plurality of memory blocks based on reliabilities of the memory blocks during runtime of the storage device. The storage controller increases a number of history read level storage areas allocated to a first memory block among the memory blocks that has a relatively low reliability with respect to the reliabilities of remaining ones of the memory blocks.

Storage device adjusting history read level storage areas based on reliabilities of memory blocks, storage controller, and operating method of storage controller

In a method of writing data in a nonvolatile memory device, a write command, a write address and write data to be programmed are received. Offset information representing a verification level is received. The offset information is provided when the write data corresponds to a distribution deterioration pattern by checking an input/output (I/O) pattern of the write data. When the offset information is received, the write data is programmed based on the offset information such that at least one state among a plurality of states included in a distribution of threshold voltages of memory cells in which the write data is stored is changed.

Method of writing data in nonvolatile memory device, nonvolatile memory device performing the same and method of operating memory system using the same

A storage device includes a nonvolatile memory device that includes a first storage area and a second storage area. A controller of the storage device controls the nonvolatile memory device and performs a read reclaim operation of reading data stored in the first storage area of the nonvolatile memory device and writing the read data in the second storage area. In the read reclaim operation, the controller is further configured to allow the nonvolatile memory device to perform sample read operations on the first storage area and to determine locations of the second storage area, at which the data are to be written, based on results of the sample read operations.

Storage device that determines write area of read reclaim operation based on estimated read count of reclaim area and operating method of the storage device

A storage device includes a nonvolatile memory device including a memory block and a memory controller. The memory block includes a first memory region connected with a first word line and a second memory region connected with a second word line. The memory controller sets a read block voltage based on a first read voltage of the first memory region. The memory controller determines a second read voltage of the second memory region based on variation information and the read block voltage.

Storage device including nonvolatile memory device and operating method thereof

A storage device includes a nonvolatile memory device including a plurality of memory blocks, each including a plurality of memory cells connected to a plurality of word lines, and a controller configured to perform a first read operation on memory cells connected to a selected word line included in a selected memory block based on a request of an external host device. The controller is further configured to perform a check read operation that checks a reliability of the memory cells of the selected memory block after performing the first read operation. In the check read operation, the controller is further configured to select and perform one of an actual check and a machine learning-based check.

Storage device and operating method of storage device

An image forming apparatus supporting a near field communication (NFC) function and a method of performing setting an image job by using an NFC device. The method includes tagging an NFC device to receive setting information stored in the NFC device and performing an image job based on the received setting information.

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Seoul, South Korea

Kwangwoo Lee