Samsung Electronics Co., Ltd.

Tokyo Ohka Kogyo Co., Ltd.

Inpria Corporation

Kwangsub Yoon

Changseop Yoon

Hyung Jong Lee

Jongmil Youn

Myung-soo Hwang

Brian J Cardineau

Sangjin Kim

Suhyun Kim

Chawon Koh

Tae Sun Kim

Tsunehiro Nishi

Yigwon Kim

Narak Choi

Woojeong Shin

Bumjoon Youn

Taehwan Oh

Yura Kim

Yeojin Lee

Jimyung Kim

Jaekyung Seo

Soyeon Yoo

Sooyoung Choi

Taehoi Park

Kumagai Tomoya

Nakhee Seong

Systems and methods for semiconductor fabrication are described. A spin coater comprises a spin chuck, a nozzle, a nozzle housing, a purge gas supply, and an organic solvent supply. The nozzle housing includes a lower housing including a solvent storage groove in which the organic solvent is stored, and an upper housing on the lower housing. The upper housing includes a nozzle insert hole on the solvent storage groove and receives the nozzle, and a gas supply hole connected to one side of the nozzle insert hole.

Spin coater and semiconductor fabrication method using the same

In a method of manufacturing an integrated circuit device, a photoresist layer is formed by coating a photoresist composition on a substrate having a main surface and an edge portion surrounding the main surface. A portion of the photoresist layer is removed from the edge portion of the substrate. After the portion of the photoresist layer is removed, the substrate is processed using a main treatment composition including an organic solvent, acid, and water.

Method of manufacturing integrated circuit device using a metal-containing photoresist composition

Spin coater and semiconductor fabrication method for reducing regeneration of photoresist

A resist coating apparatus including a resist supplying system; a resist filtering system having a first filter, a second filter, and a pump between the first filter and the second filter; and a resist dispensing system, wherein the first filter includes a plurality of first unit filters connected in parallel.

Resist filtering system having multi filters and apparatus having the resist filtering system

A semiconductor device includes a substrate including PMOSFET and NMOSFET regions, a first gate structure extending in a first direction and crossing the PMOSFET and NMOSFET regions, and a gate contact on and connected to the first gate structure, the gate contact being between the PMOSFET and NMOSFET regions, the gate contact including a first sub contact in contact with a top surface of the first gate structure, the first sub contact including a vertical extending portion extending vertically toward the substrate along one sidewall of the first gate structure, and a second sub contact spaced apart from the first gate structure, a top surface of the second sub contact being positioned at a same level as a top surface of the first sub contact.

Semiconductor device

Semiconductor device and method of manufacturing the same

A semiconductor device includes a circuit pattern on a substrate, a shielding pattern on the circuit pattern and constituted by a plurality of parallel bars, and lower overlay marking on the shielding pattern and constituted by a plurality of parallel bars which define parallel slits between the bars. The pitch of the bars of the shielding pattern is smaller than the pitch of the bars of the lower overlay marking.

Semiconductor devices having shielding pattern

The method may include forming a plurality of fins on a substrate with first and second regions, forming a photoresist pattern to expose the fins of the first region, forming a material layer to cover the fins of first region and the photoresist pattern, chemically reacting the photoresist pattern the material layer to form a supplemental film on a side surface of the photoresist pattern, performing an ion implantation process using the photoresist pattern and the supplemental film as a ion injection mask to form impurity layers in the fins of the first region.

Method of fabricating semiconductor device

Growing community of inventors

Yongin-si, South Korea

Kwangsub Yoon