Samsung Electronics Co., Ltd.

Kwangsu Kim

Yongsun Ko

Kyunghyun Kim

Kuntack Lee

Yong-Jhin Cho

Se-Ho Cha

Yongmyung Jun

SeokHoon Kim

Hyosan Lee

ChangSup Mun

Jinwoo Lee

Hoon Hee Han

Seokhoon Kim

Daehong Eom

Jun-Youl Yang

Kyoungseob Kim

Jung-Min Oh

Kijong Park

Keonyoung Kim

Wonho Jang

Choongkee Seong

Sunjoong Song

Byoung Jae Park

Kyongseob Kim

A substrate treatment apparatus is provided. The apparatus may include a process chamber configured to have an internal space, a substrate supporting member disposed in the process chamber to support a substrate, a first supplying port configured to supply a supercritical fluid to a region of the internal space located below the substrate, a second supplying port configured to supply a supercritical fluid to other region of the internal space located over the substrate, and an exhaust port configured to exhaust the supercritical fluid from the process chamber to an exterior region.

Apparatus and methods for treating a substrate

Disclosed are a method of wet etching and a method of fabricating a semiconductor device. The wet etching method includes providing a wafer in a process bath and an etchant is accommodated, supplying the process bath with a primary etchant to control a concentration of a specific material in the etchant, supplying the process bath with a first additive to increase the concentration of the specific material in the etchant, and supplying the process bath with a second additive to suppress a defect caused by an increase in the concentration of the specific material in the etchant. The etchant includes at least one, of the primary etchant, the first additive, and the second additive. The first additive and the second additive are separately supplied to the process bath.

Method of wet etching and method of fabricating semiconductor device using the same

The inventive concepts provide a method of completely removing a damage region of a surface of an etch target layer after plasma-etching the etch target layer. The method includes performing a first post-etch plasma treatment process using a first post-treatment gas on the plasma-etched etch target layer. A polarity of ions of the first post-treatment gas may be the same as a polarity of bias power applied to a stage in a plasma apparatus.

Method of treating a layer

Substrate treatment systems are provided. The substrate treatment systems may include a treating device configured to treat a substrate with a supercritical fluid, and a supplying device configured to supply the supercritical fluid to the treating device. The treating device may include a supercritical process zone in which the substrate is treated with the supercritical fluid, and a pre-supercritical process zone in which the supercritical fluid is expanded and then provided into the supercritical process zone to create a supercritical state in the supercritical process zone.

Substrate treatment systems using supercritical fluid

A mold stack including alternating insulation layers and sacrificial layers is formed on a substrate. Vertical channel regions extending through the insulation layers and sacrificial layers of the mold stack are formed. Gate electrodes are formed between adjacent ones of the insulation layers and surrounding the vertical channel regions. The gate electrodes have a greater thickness at a first location near sidewalls of the insulation layers than at a second location further away from the sidewalls of the insulation layers.

Vertical channel memory devices with nonuniform gate electrodes and methods of fabricating the same

Vertical channel memory devices with nonuniform gate electrodes

Growing community of inventors

Seoul, South Korea

Kwangsu Kim