Lg Display Co., Ltd.

Lg Electronics Inc.

Lg Magna E-powertrain Co., Ltd.

Kwangsoo Kim

Seongmoo Cho

Yongho Kim

Jaesung Park

Siho Choi

Gun Lee

Seungchul Lee

Minkyu Chang

YongHo Kim

Oksun Yu

Taegi Kim

Min-June Jang

Byunghoon Kim

Disclosed herein are a gate driving circuit having a small-area structure and a display device, and more specifically, each of a plurality of stage circuits included in the gate driving circuit includes a sensing part, a logic part, and a buffer group, first to fourth scan clock signals and a first carry clock signal are electrically connected to a first stage circuit, and fifth to eighth scan clock signals and a second carry clock signal are electrically connected to a second stage circuit.

Gate driving circuit and display device

According to embodiments of the disclosure, a gate driving circuit and a display device may include four buffer groups for driving 4k scan lines, two common logic units for controlling the four buffer groups, and a common sensing circuit controlling to output a sensing driving scan signal to at least one scan line among the 4k scan lines. Thus, it is possible to allow the gate driving circuit to have a low-area structure and to reduce the bezel area of the display device.

Gate driving circuit having a common sensing circuit for controlling scan driving circuits and display device thereof

A gate driver circuit and a display device including the same have a voltage difference between output lines of the gate driver circuit that is reduced. To this end, a first gate driver is disposed on one side of a display panel, while a second gate driver is disposed on side of the display panel opposite the one side. An odd-numbered output line of the first gate driver is connected to an even-numbered output line of the second gate driver, while an even-numbered output line of the first gate driver is connected to an odd-numbered output line of the second gate driver. Therefore, the voltage difference between the output lines of the gate driver circuit is minimized or reduced.

Gate driving circuit and display device including the gate driving circuit

A power module is disclosed. A power module according to an embodiment of the present disclosure may include a first substrate and a second substrate spaced apart from each other, an electronic device unit provided on at least either one of the first and second substrates, and a lead frame unit provided between the first and second substrates. One side of the lead frame unit may be connected to an external circuit, and the other side thereof may be configured to electrically connect the first and second substrates. Accordingly, the lead frame unit may perform a function of electrically connecting the first and second substrates instead of a via spacer in the related art.

Power module including lead frame unit connecting first substrate and second substrate

A power module according implementations of the present disclosure includes a bonding layer for bonding two adjacent members. The bonding layer is formed by melting, applying, and solidifying a bonding material that has excellent thermal conductivity and electrical conductivity. The melted bonding material includes a plurality of anti-tilting members. The two members bonded during the process of solidifying the melted bonding material are supported by the plurality of anti-tilting members. This may allow tilting caused during the formation of the bonding layer to be suppressed.

Power module of double-faced cooling

A gate driving circuit includes a first gate driving circuit and a second gate driving circuit, wherein the m number of first clock signals input to the first gate driving circuit includes an (n+1)-th clock signal and an (n+k)-th clock signal, and the m number of second clock signals input to the second gate driving circuit includes an (n+2)-th clock signal and an (n+k+1)-th clock signal, where the n is any integer, and the k is a natural number of 3 or more, a high level voltage duration of the (n+1)-th clock signal and a high level voltage duration of the (n+k)-th clock signal do not overlap, and a high level voltage duration of the (n+2)-th clock signal and a high level voltage duration of the (n+k+1)-th clock signal do not overlap.

A gate driver circuit includes a plurality of stage circuits, each stage circuit supplies a gate signal to each of gate lines arranged in a display panel and includes a M node, a Q node, a QH node, and a QB node, and each stage circuit includes a line selector, a Q node controller, a Q node and QH node stabilizer, an inverter, a QB node stabilizer, a carry signal output module, and a gate signal output module, and a high voltage level period of a carry clock signal is set not to overlap with a high voltage level period of a first scan clock signal.

Gate driver circuit and display device including the same

A device for power factor correction can include a converter housing having an inner surface; a first converter substrate mounted on the inner surface of the converter housing; a second converter substrate mounted on another surface of first converter housing opposite to the inner surface; and a housing cover covering the first converter substrate and coupled to an upper surface of the converter housing, in which the second converter substrate includes a first surface having a first region including a source pad, and a second region including a drain pad spaced apart from the source pad, the source pad including a source pad extension portion extending into the second region; and a second surface including a heat dissipation pad for communicating heat from the source and drain pads to an outside of the device, in which the first region of the second converter substrate overlaps with the another surface of first converter housing, and the second region of the second converter substrate faces the housing cover without overlapping with the first converter substrate.

Device for power factor correction

In a gate driver, a Q node is shared by two channels to output a scan signal at high level, and a QB node is shared by four channels to output a scan signal at low level. Accordingly, the number of thin-film transistors required to configure four channels of a gate-in-panel (GIP) is reduced, such that the bezel size can be reduced. Further, the gate driver includes a compensation capacitor or a discharge transistor disposed in some of the channels sharing the Q node, such that deviation in output characteristics among the channels sharing the Q node can be reduced.

Growing community of inventors

Seoul, South Korea

Kwangsoo Kim