Tokyo Electron Limited

Kwangpyo Choi

Takashi Sakuma

Masahisa Watanabe

Osamu Yokoyama

Yuichiro Wagatsuma

Mayuko Nakamura

A substrate processing method includes: preparing a substrate which includes a base having an epitaxial layer formed by epitaxial growth, and an insulating film formed on the base and having a penetration portion that exposes the epitaxial layer; forming a silicon film on a surface of the epitaxial layer exposed from the penetration portion rather than a side wall of the penetration portion; and forming a metal film on the silicon film formed on the surface of the epitaxial layer rather than the side wall of the penetration portion, and causing the silicon film to react with the metal film to form a metal silicide film.

Growing community of inventors

Nirasaki, Japan

Kwangpyo Choi