Lg Display Co., Ltd.

Industry-university Cooperation Foundation Hanyang University

Kwanghwan Ji

Jaeyoon Park

PilSang Yun

HongRak Choi

SeHee Park

HyungJoon Koo

Jeyong Jeon

Bum Sik Kim

Yong Duck Kim

Harkjin Kim

JunHyeon Bae

Byong-Deok Choi

June Hee Lee

Dong-Young Kim

Dohyung Lee

Joon-Hyuk Chang

Jiyong Noh

Kiseok Chang

DaeHwan Kim

Saeroonter Oh

Jonguk Bae

YongHo Jang

Hyunsoo Shin

Hyojung Park

Junghoon Seo

Kipyo Hong

Kwan-Ho Park

Seunghyuck Lee

Dong Young Kim

Pilsang Yun

Hyungjoon Koo

Hongrak Choi

Sehee Park

A display device according to an exemplary embodiment of the present disclosure includes a light emitting diode and a pixel driving circuit which drives the light emitting diode, the pixel driving circuit includes a driving transistor which applies a driving current to the light emitting diode, a first transistor which applies a first reference voltage to a gate electrode of the driving transistor, a second transistor which applies a data voltage to the gate electrode of the driving transistor, a third transistor which applies a second reference voltage to a source electrode of the driving transistor, and a storage capacitor connected to the gate electrode and the source electrode of the driving transistor. According to the present disclosure, the threshold voltage Vth and the mobility of the driving transistors are internally compensated to improve an image quality.

Display device

Disclosed are a display device and a method for driving a pixel of the display device. The device and method is capable of securing a time to sense a threshold voltage of a driving transistor and of compensating for the threshold voltage during operation of the pixel. Each of a plurality of pixels has a 5T1C structure including first to fourth transistors and a driving transistor. The first to fourth transistors are configured to apply driving signals through first to fourth scan lines, respectively. Thus, even without increasing the number of driving signals applied to each pixel, a long time for sensing a threshold voltage of each pixel can be secured.

Display device and method for driving pixel of the same

The present invention relates to a display apparatus that allows a compensated data voltage to be supplied to each pixel by compensating for the data voltage so as to prevent burn-in from occurring in a display panel, a method for compensating a data signal thereof, and a method for generating a deep learning-based compensation model. To implement same, the present invention provides the display apparatus comprising a timing controller having mounted therein the compensation model generated by learning, in a deep learning method, the temperature, time, average brightness, and data voltage for each pixel. Accordingly, the present invention has an effect of preventing burn-in from occurring in each pixel by supplying each pixel with the compensated data voltage generated via the compensation model.

Display apparatus, method for compensating for data signal thereof, and method for generating deep learning-based compensation model

A panel comprises a substrate; a transistor disposed on the substrate and including: a source electrode, a drain electrode, a gate electrode, a gate insulation layer, an active layer, an auxiliary source electrode configured to electrically connect one end of the active layer to the source electrode, and an auxiliary drain electrode configured to electrically connect an other end of the active layer to the drain electrode; and a capacitor disposed on the substrate and including a first plate and a second plate. The first plate of the capacitor is made of a same material as the auxiliary source electrode and the auxiliary drain electrode.

Panel, electronic device and transistor

Disclosed are a transistor assembly, an organic light emitting display panel including the same, and an organic light emitting display device including the organic light emitting display panel, in which a first electrode of a switching transistor is used as a gate of a driving transistor.

Transistor assembly, and organic light emitting display panel and organic light emitting display device including the same

A thin film transistor is disclosed, which includes an oxide semiconductor layer on a substrate; a gate insulating film on the oxide semiconductor layer; a gate electrode on the gate insulating film; a hydrogen supply layer on the gate insulating film; a source electrode connected with the oxide semiconductor layer; and a drain electrode spaced apart from the source electrode and connected with the oxide semiconductor layer, wherein the oxide semiconductor layer includes a channel portion overlapped with the gate electrode and a connecting portion not overlapped with the gate electrode, a hydrogen concentration of the connecting portion is higher than that of the channel portion, and the gate insulating film includes a first area overlapped with the gate electrode and a second area not overlapped with the gate electrode, and a hydrogen concentration of the second area is higher that of the first area.

Thin film transistor, method for manufacturing the same and display device comprising the same

Disclosed are an oxide thin film transistor (TFT), a method of manufacturing the same, a display panel including the oxide TFT, and a display device including the display panel, in which a crystalline oxide semiconductor is provided on a metal insulation layer including metal through a metal organic chemical vapor deposition (MOCVD) process. The oxide TFT includes a metal insulation layer including metal, a crystalline oxide semiconductor adjacent to the metal insulation layer, a gate including metal, a gate insulation layer between the crystalline oxide semiconductor and the gate, a first conductor in one end of the crystalline oxide semiconductor, and a second conductor in another end of the crystalline oxide semiconductor.

Oxide thin film transistor, method of manufacturing the same, and display panel and display device including the oxide thin film transistor

Disclosed are an oxide thin film transistor (TFT), a method of manufacturing the same, and a display panel and a display device using the same, in which a first conductor and a second conductor are provided at end portions of a semiconductor layer formed of oxide semiconductor. The first conductor and second conductor are electrically connected to a first electrode and a second electrode, and covered by a gate insulation layer. The oxide TFT includes a semiconductor layer provided on a buffer and including an oxide semiconductor, a gate insulation layer covering the semiconductor layer and the buffer, a gate electrode provided on the gate insulation layer to overlap a portion of the semiconductor layer, and a passivation layer covering the gate and the gate insulation layer.

Coplanar type oxide thin film transistor, method of manufacturing the same, and display panel and display device using the same

Disclosed is a thin film transistor substrate which facilitates to realize a bottom gate structure where a gate electrode is disposed below an active layer, and to increase an area for a storage capacitor, and a display device including the same, wherein the thin film transistor substrate may include a light shielding layer, a buffer layer for covering the light shielding layer, and a driving transistor prepared on the buffer layer while being overlapped with the light shielding layer, and provided to supply a driving current to an organic light emitting device.

Thin film transistor substrate and display device including the same

Disclosed are a transistor substrate, an organic light emitting display panel including the same, a method of manufacturing the transistor substrate, and an organic light emitting display device including the organic light emitting display panel, in which a driving transistor and a switching transistor are provided and each include an oxide semiconductor of which both ends are covered by an insulation layer, and a gate of the driving transistor and a gate of the switching transistor are provided on different layers.

Transistor substrate, and organic light emitting display panel including the same having a coupled driving gate and switching channel

A thin film transistor (TFT) substrate and a display device using the same are disclosed. The TFT substrate includes a base substrate, a first TFT having a polycrystalline semiconductor and disposed on the base substrate, and a second TFT having an oxide semiconductor and disposed on the first TFT. The second TFT overlaps at least a portion of the first TFT in a plan view.

Thin film transistor substrate and display device using the same

A thin-film transistor includes a substrate, a first gate electrode formed on the substrate, a first active layer that is formed on the substrate and includes a first oxide semiconductor layer and a first barrier layer, a second active layer that is formed on the first active layer and includes a second oxide semiconductor layer and an intermediate barrier layer, a gate insulating layer that is formed on the second active layer, a second gate electrode that is formed on the gate insulating layer and is electrically connected to the first gate electrode, an interlayer insulating film formed on the second gate electrode, the first active layer and the second active layer, and a source electrode and a drain electrode electrically connected to the first active layer and the second active layer.

Growing community of inventors

Taebaek-si, South Korea

Kwanghwan Ji