Samsung Electronics Co., Ltd.

Samsung Display Co., Ltd.

University of California

University of Toronto

Kwanghee Kim

Eun Joo Jang

Tae Hyung Kim

Dae Young Chung

Moon Gyu Han

Won Sik Yoon

Oul Cho

Hongkyu Seo

Kun Su Park

Heejae Lee

Chan Su Kim

Tae Ho Kim

Hyo Sook Jang

Hyeon Cheol Park

Jaejun Chang

Youngjin Cho

Chan Kwak

Sujin Park

Weonho Shin

Yuho Won

Daejin Yang

Jaeyong Lee

Hee Jae Lee

Sang Jin Lee

Jiyeon Lee

Armand Paul Alivisatos

Eun-Hyoung Cho

Jinyoung Hwang

Yun Sung Woo

Yong Kim

Junghwa Kim

Eun-hyoung Cho

Jong Wook Roh

Kyoung-Seok Moon

Mi Jeong Kim

In Taek Han

Woong Ko

Hiesang Sohn

Eun Seog Cho

Hyosug Lee

Janghoon Lee

Dong Su Ko

Changhun Lee

Jiye Kim

Gwangho Lee

Sunggi Baek

Young-soo Jeong

Dong-Su Ko

Ted Sargent

Jongphil Lee

Yehonadav Bekenstein

Jae-Young Choi

Hong Kyu Seo

Seungjin Lee

Keunwoo Cho

A quantum dot device, a method of manufacturing the same, a thin film having a multilayered structure, and an electronic device including the same. The quantum dot device includes a first electrode and a second electrode, a quantum dot layer disposed between the first electrode and the second electrode, and a hole transport layer disposed between the quantum dot layer and the first electrode, wherein the hole transport layer includes a first hole transport layer including a three-dimensional structure perovskite thin film and a second hole transport layer including a two-dimensional structure perovskite thin film.

Quantum dot device, film having multilayered structure, and electronic device

A light emitting device including a first electrode and a second electrode facing each other, a quantum dot emission film disposed between the first electrode and the second electrode, and a charge auxiliary layer disposed between the emission film and the first electrode, between the emission film and the second electrode, or between the emission film and the first electrode and between the emission film and the second electrode, wherein the quantum dot emission film includes a first surface facing the charge auxiliary layer and an opposite second surface. A manufacturing method of making the light emitting device, and a display device including the same.

Light emitting device and display device including the same

An electroluminescent device including an anode; a cathode; a light emitting layer disposed between the anode and the cathode; and an electron transport layer disposed between the light emitting layer and the cathode, wherein the light emitting layer includes a plurality of semiconductor nanoparticles, the electron transport layer includes zinc oxide nanoparticles including a Group IIA metal and an acid salt of an alkali metal that has an oxycarbonyl moiety, and the zinc oxide nanoparticles have an average size of less than or equal to about 20 nanometers (nm).

Electroluminescent device, production method thereof, and display device including the same

Light emitting device, method of manufacturing the light emitting device, and display device including the light emitting device are disclosed. The light emitting device includes a first electrode and a second electrode each having a surface opposite the other, a light emitting layer including quantum dots that is disposed between the first electrode and the second electrode, and an electron auxiliary layer disposed between the light emitting layer and the second electrode, wherein the electron auxiliary layer includes metal oxide nanoparticles including an anion of an organic acid bound to a surface of the metal oxide nanoparticle.

Light emitting device with electron auxiliary layer including metal oxide nanoparticles, and method of manufacturing the light emitting device, and display device

A light emitting device including a first electrode and a second electrode each having a surface opposite the other, a light emitting layer disposed between the first electrode and the second electrode, and an electronic auxiliary layer disposed between the light emitting layer and the second electrode, wherein the electron auxiliary layer includes metal oxide nanoparticles and an orthosilicate compound.

Light emitting device, method for manufacturing the same, and electronic device including the same

An electroluminescent device includes a first electrode and a second electrode facing each other; an emission layer disposed between the first electrode and the second electrode and including a plurality of quantum dots and a first hole transporting material having a substituted or unsubstituted C4 to C20 alkyl group attached to a backbone structure; a hole transport layer disposed between the emission layer and the first electrode and including a second hole transporting material; and an electron transport layer disposed between the emission layer and the second electrode.

Electroluminescent device, and display device comprising thereof

A quantum dot device including a first electrode and a second electrode each having a surface opposite the other, a quantum dot layer disposed between the first electrode and the second electrode, an electron transport layer disposed between the quantum dot layer and the second electrode and including first inorganic nanoparticles and a first organic material, and an electron injection layer disposed between the electron transport layer and the second electrode and including second inorganic nanoparticles and a second organic material, wherein a ratio by weight of an amount of the second organic material to a total amount of the second inorganic nanoparticles and the second organic material in the electron injection layer is less than a ratio by weight of an amount of the first organic material to a total amount of the first inorganic nanoparticles and the first organic material in the electron transport layer. An electronic device including the quantum dot device.

Quantum dot device, method of manufacturing the same, and electronic device

A light-emitting device including a first electrode, a second electrode, and a light-emitting film disposed between the first electrode and the second electrode, and a method of producing the device. The light-emitting film includes a fluorine-containing organic salt, and quantum dots that do not include cadmium, lead, or a combination thereof, and the fluorine-containing organic salt includes a substituted or unsubstituted C1 to C30 hydrocarbon group, a non-metallic element, fluorine, and at least one of boron or phosphorus, and the non-metallic element includes carbon, nitrogen, oxygen, phosphorus, sulfur, or selenium.

Light-emitting device comprising organic salt bound to quantum dots and production method thereof

A semiconductor nanocrystal including an anion of an inorganic metal salt and a first organic ligand bound to a surface of the semiconductor nanocrystal, wherein the first organic ligand includes a substituted or unsubstituted C6 to C30 aromatic ring group and a carboxylate, a substituted or unsubstituted C3 to C30 aromatic hetero cyclic group and a carboxylate, or a combination thereof.

Semiconductor nanocrystal, light-emitting film, production method of the light-emitting film, light emitting device, and display device

Light emitting device with electron auxiliary layer including metal oxide nanoparticles, method of manufacturing the device, and a display device

A light emitting device includes an emission layer including a plurality of quantum dots, and an electron auxiliary layer disposed on the emission layer, the electron auxiliary layer to transport electrons to the emission layer, wherein the electron auxiliary layer includes a plurality of metal oxide nanoparticles, wherein the metal oxide nanoparticles include zinc and a dopant metal, wherein the dopant metal includes Mg, Mn, Ni, Sn, Al, Y, Ga, Zr, Ni, Li, Co, or a combination thereof, wherein the dopant metal in at least one of the metal oxide nanoparticles is included in the metal oxide nanoparticle to have a concentration gradient of the dopant metal.

Light emitting device comprising gradient electron auxiliary layer and display device including the same

A light emitting device including a first electrode and a second electrode, and an emission layer disposed between the first electrode and the second electrode and including quantum dots, a first charge auxiliary layer disposed between the emission layer and the first electrode, and a second charge auxiliary layer disposed between the emission layer and the second electrode, wherein the emission layer comprises a first emission layer contacting the first charge auxiliary layer, a second emission layer disposed on the first emission layer, and a third emission layer disposed on the second emission layer. The hole mobility of the first emission layer decreases sequentially from the first emission layer to the third emission layer.

Light emitting device and display device including 1HE same

Quantum dots including semiconductor nanocrystals, methods of producing the same, and quantum dot solutions and electronic devices including the same. The quantum dots do not include cadmium, lead, or a combination thereof. The quantum dots include an organic ligand and a halogen on the surfaces, and the quantum dots are dispersible in an organic solvent to form organic solutions.

Quantum dots and quantum dot solutions

Growing community of inventors

Seoul, South Korea

Kwanghee Kim