Applied Materials, Inc.

Other

Varian Semiconductor Equipment Associates, Inc.

Kwangduk Douglas Lee

Prashant Kumar Kulshreshtha

Bok Hoen Kim

Martin Jay Seamons

Ganesh Balasubramanian

Sarah Michelle Bobek

Sudha S Rathi

Juan Carlos Rocha-Alvarez

Ziqing Duan

Sungwon Ha

Zheng John Ye

Venkata Sharat Chandra Parimi

Abdul Aziz Khaja

Karthik Thimmavajjula Narasimha

Xiaoquan Min

Vinay K Prabhakar

Ratsamee Limdulpaiboon

Paul Dennis Connors

Saptarshi Basu

Jianhua Zhou

Rajesh Prasad

Chiu Chan

Harry S Whitesell

Karthik Janakiraman

Hari K Ponnekanti

Lei Jing

Hidetaka Oshio

Deven Matthew Raj Mittal

Hiroji Hanawa

Deenesh Padhi

Jian Li

Amit Kumar Bansal

Jay D Pinson, Ii

Dale Robert Du Bois

Praket Prakash Jha

Kalyanjit Ghosh

Jeongmin Lee

Mandar Balasaheb Pandit

Viren Kalsekar

Venkatanarayana Shankaramurthy

Scott Falk

Venkataramana R Chavva

Yoichi Suzuki

Jiarui Wang

Dong Hyung Lee

Mohsin Waqar

Liliya Krivulina

Brett Berens

Hiroyuki Ogiso

Rick Gilbert

Takashi Morii

Ramprakash Sankarakrishnan

Edward P Hammond

Krishna Nittala

Michael Wenyoung Tsiang

Patrick Reilly

Xing Lin

Wendy H Yeh

Milind Gadre

Matthew Spuller

Anjana M Patel

Dimitri R Kioussis

Dong H Lee

Swayambhu Prasad Behera

Sum-Yee Betty Tang

Byung Seok Kwon

Irfan Jamil

Thuy Britcher

Tuan Anh Nguyen

Eric J Bergman

Paul Brillhart

Susmit Singha Roy

Mukund Srinivasan

Jian J Chen

Ren-Guan Duan

John Lee Klocke

Dmitry A Dzilno

Eswaranand Venkatasubramanian

Zubin Huang

Diwakar N Kedlaya

Terrance Y Lee

Mayur G Kulkarni

Sanjay G Kamath

Kyu-Ha Shim

Kaushik Comandoor Alayavalli

Fang Ruan

Ndanka O Mukuti

Lu Xu

Liangfa Hu

Jason K Foster

Zongbin Wang

Rajaram Narayanan

Uwe Paul Haller

Akshay Gunaji

Bushra Afzal

Tzu-Yu Liu

Feng Bi

Bok Heon Kim

Hyung Je Woo

Methods for in situ seasoning of process chamber components, such as electrodes are described. In an embodiment, the method includes depositing a silicon oxide film over the process chamber component and converting the silicon oxide film to a silicon-carbon-containing film. The silicon-carbon-containing film forms a protective film over the process chamber components and is resistant to plasma processing and/or dry etch cleaning. The coatings has high density, good emissivity control, and reduces risk of device property drift.

Method of in situ ceramic coating deposition

Exemplary semiconductor processing systems may include a chamber body including sidewalls and a base. The system may include a substrate support extending through the base of the chamber body. The chamber body may define an access circumferentially extending about the substrate support at the base of the chamber body. The system may include one or more isolators disposed within the chamber body. The one or more isolators may define an exhaust path between the one or more isolators and the chamber body. The exhaust path may extend to the base of the chamber body. The systems may include a fluid source fluidly coupled with the chamber body at the access extending about the substrate support.

Processing chamber deposition confinement

Implementations of the present disclosure generally relate to the fabrication of integrated circuits. More particularly, the implementations described herein provide techniques for deposition of boron-carbon films on a substrate. In one implementation, a method of processing a substrate is provided. The method comprises flowing a hydrocarbon-containing gas mixture into a processing volume of a processing chamber having a substrate positioned therein, wherein the substrate is heated to a substrate temperature from about 400 degrees Celsius to about 700 degrees Celsius, flowing a boron-containing gas mixture into the processing volume and generating an RF plasma in the processing volume to deposit a boron-carbon film on the heated substrate, wherein the boron-carbon film has an elastic modulus of from about 200 to about 400 GPa and a stress from about −100 MPa to about 100 MPa.

Ultra-high modulus and etch selectivity boron-carbon hardmask films

A plasma processing system is described. The system may include a showerhead. The system may further include a first RF generator in electrical communication with the showerhead. The first RF generator may be configured to deliver a first voltage at a first frequency to the showerhead. Additionally, the system may include a second RF generator in electrical communication with a pedestal. The second RF generator may be configured to deliver a second voltage at a second frequency to the pedestal. The second frequency may be less than the first frequency. The system may also include a terminator in electrical communication with the showerhead. The terminator may provide a path to ground for the second voltage. Methods of depositing material using the plasma processing system are described. A method of seasoning a chamber by depositing silicon oxide and silicon nitride on the wall of the chamber is also described.

Dual RF for controllable film deposition

In one or more embodiments, a method for depositing a carbon hard-mask material by plasma-enhanced chemical vapor deposition (PECVD) includes heating a substrate contained within a process chamber to a temperature in a range from about 100 C to about 700 C and producing a plasma with a power generator emitting an RF power of greater than 3 kW. In some examples, the temperature is in a range from about 300 C to about 700 C and the RF power is greater than 3 kW to about 7 kW. The method also includes flowing a hydrocarbon precursor into the plasma within the process chamber and forming a carbon hard-mask layer on the substrate at a rate of greater than 5,000/min, such as up to about 10,000/min or faster.

Plasma-enhanced chemical vapor deposition of carbon hard-mask

Aspects generally relate to methods, systems, and apparatus for processing substrates using one or more amorphous carbon hardmask layers. In one aspect, film stress is altered while facilitating enhanced etch selectivity. In one implementation, a method of processing a substrate includes depositing one or more amorphous carbon hardmask layers onto the substrate, and conducting a rapid thermal anneal operation on the substrate after depositing the one or more amorphous carbon hardmask layers. The rapid thermal anneal operation lasts for an anneal time that is 60 seconds or less. The rapid thermal anneal operation includes heating the substrate to an anneal temperature that is within a range of 600 degrees Celsius to 1,000 degrees Celsius. The method includes etching the substrate after conducting the rapid thermal anneal operation.

Methods, systems, and apparatus for processing substrates using one or more amorphous carbon hardmask layers

Methods and techniques for deposition of amorphous carbon films on a substrate are provided. In one example, the method includes depositing an amorphous carbon film on an underlayer positioned on a susceptor in a first processing region. The method further includes implanting a dopant or the inert species into the amorphous carbon film in a second processing region. The implant species, energy, dose & temperature in some combination may be used to enhance the hardmask hardness. The method further includes patterning the doped amorphous carbon film. The method further includes etching the underlayer.

Highly etch selective amorphous carbon film

One or more embodiments described herein generally relate to methods for chucking and de-chucking a substrate to/from an electrostatic chuck used in a semiconductor processing system. Generally, in embodiments described herein, the method includes: (1) applying a first voltage from a direct current (DC) power source to an electrode disposed within a pedestal; (2) introducing process gases into a process chamber; (3) applying power from a radio frequency (RF) power source to a showerhead; (4) performing a process on the substrate; (5) stopping application of the RF power; (6) removing the process gases from the process chamber; and (7) stopping applying the DC power.

Electrostatic chucking process

Methods for depositing an amorphous carbon layer on a substrate and for filling a substrate feature with an amorphous carbon gap fill are described. The method comprises performing a deposition cycle comprising: introducing a hydrocarbon source into a processing chamber; introducing a plasma initiating gas into the processing chamber; generating a plasma in the processing chamber at a temperature of greater than 600° C.; forming an amorphous carbon layer on a substrate with a deposition rate of greater than 200 nm/hr; and purging the processing chamber.

Amorphous carbon for gap fill

Exemplary semiconductor processing systems include a processing chamber, a power supply, and a chuck disposed at least partially within the processing chamber. The chuck includes a chuck body defining a vacuum port. The chuck also includes first and second coplanar electrodes embedded in the chuck body and connected to the power supply. In some examples, coplanar electrodes include concentric electrodes defining a concentric gap in between. Exemplary semiconductor processing methods may include activating the power supply for the electrostatic chuck to secure a semiconductor substrate on the body of the chuck and/or activating the vacuum port defined by the body of the electrostatic chuck. Some processing can be carried out at increased pressure, while other processing can be carried out at reduced pressure with increased chucking voltage.

Multi-pressure bipolar electrostatic chucking

Exemplary methods of semiconductor processing may include treating a surface of a substrate with a hydrogen-containing precursor. The substrate may be disposed within a processing region of a semiconductor processing chamber. The methods may include contacting the substrate with a tungsten-containing precursor. The methods may include forming an initiation layer comprising tungsten on the substrate. The methods may include treating the initiation layer with a hydrogen-containing precursor. The methods may include forming a plasma of the tungsten-containing precursor and a carbon-containing precursor. Hydrogen in the plasma may be limited to hydrogen included in the carbon-containing precursor. The methods may include forming a tungsten-containing hardmask layer on the initiation layer.

Reduced hydrogen deposition processes

Aspects of the present disclosure relate generally to pedestals, components thereof, and methods of using the same for substrate processing chambers. In one implementation, a pedestal for disposition in a substrate processing chamber includes a body. The body includes a support surface. The body also includes a stepped surface that protrudes upwards from the support surface. The stepped surface is disposed about the support surface to surround the support surface. The stepped surface defines an edge ring such that the edge ring is integrated with the pedestal to form the body that is monolithic. The pedestal also includes an electrode disposed in the body, and one or more heaters disposed in the body.

Pedestal for substrate processing chambers

Exemplary methods of semiconductor processing may include forming a silicon oxide material on exposed surfaces of a processing region of a semiconductor processing chamber. The methods may include forming a silicon nitride material overlying the silicon oxide material. The methods may include performing a deposition process on a semiconductor substrate disposed within the processing region of the semiconductor processing chamber. The methods may include performing a chamber cleaning process.

Reduced defect deposition processes

A system may include a main line for delivering a first gas, and a sensor for measuring a concentration of a precursor in the first gas delivered through the main line. The system may further include first and second sublines for providing fluid access to first and second processing chambers, respectively. The first subline may include a first flow controller for controlling the first gas flowed through the first subline. The second subline may include a second flow controller for controlling the first gas flowed through the second subline. A delivery controller may be configured to control the first and second flow controllers based on the measured concentration of the precursor to deliver a first mixture of the first gas and a second gas and a second mixture of the first and second gases into the first and second semiconductor processing chambers, respectively.

Gas delivery systems and methods

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Redwood City, CA, United States of America

Kwangduk Douglas Lee