Lg Electronics Inc.

Kwangchoong Kim

Taehoon Jang

Eujin Hwang

Jinhong Park

Seongmoo Cho

Sungwook Hwang

Sungwoon Moon

Sangduk Yu

Sanghoon Choi

A physically unclonable device according to an embodiment of the present disclosure comprises: a plurality of inverters disposed on a first path to which a first signal is input; a plurality of inverters disposed on a second path to which a second signal is input; a first MOS capacitor disposed on the first path; and a second MOS capacitor disposed on the second path, wherein a first voltage is applied to a MOS capacitor located on the path corresponding to whichever of the first signal or the second signal arrives later at an output terminal of the first path or an outer terminal of the second path. Accordingly, a physically unclonable device that does not require separate error correction can be achieved.

Physically unclonable device, and signal processing device and image display device having same

A semiconductor device including a first GaN layer, an AlGaN layer, a second GaN layer, a gate electrode, a source electrode, and a drain electrode sequentially stacked on a substrate, capable of improving a leakage current and a breakdown voltage characteristics generated in the gate electrode by locally forming a p type GaN layer on the AlGaN layer, and a manufacturing method thereof, and a manufacturing method thereof are provided. The semiconductor device includes: a substrate, a first GaN layer formed on the substrate, an AlGaN layer formed on the first GaN layer, a second GaN layer formed on the AlGaN layer and including a p type GaN layer, and a gate electrode formed on the second GaN layer, wherein the p type GaN layer may be in contact with a portion of the gate electrode.

Nitride semiconductor device using selective growth and manufacturing method thereof

Disclosed is a semiconductor device. More specifically, disclosed are a nitride-based heterojunction semiconductor device and a method for producing the same. The nitride-based heterojunction semiconductor device includes a nitride semiconductor buffer layer, a barrier layer disposed on the buffer layer, a cap layer discontinuously disposed on the barrier layer, a source electrode and a drain electrode that contact at least one of the barrier layer and the cap layer, and a gate electrode that Schottky-contacts at least one of the barrier layer and the cap layer and is disposed between the source electrode and the drain electrode.

Nitride-based heterojunction semiconductor device and method for the same

Growing community of inventors

Seoul, South Korea

Kwangchoong Kim