Samsung Electronics Co., Ltd.

Kwang Yong Yang

Min-Chul Sun

Dae Won Ha

Jae Young Park

Young Su Chung

Jong Min Jeon

Seung Mo Ha

Dong Hoon Hwang

Jong Hwa Baek

Jin Wook Lee

Kwan Heum Lee

Byeong Chan Lee

Jong Ki Jung

Yoon Hae Kim

Jong In Baek

Myung Il Kang

Myung Ii Kang

A semiconductor device including a device isolation region is provided. The semiconductor device includes first active regions disposed on a substrate, and an isolation region between the active regions. The isolation region includes a first portion formed of a first insulating material, and a second portion formed of a second insulating material, having different characteristics from those of the first insulating material. The first portion is closer to the first active regions than the second portion. The second portion has a bottom surface having a height different from that of a bottom surface of the first portion.

Semiconductor device including isolation regions

A semiconductor device includes a substrate having a first region and a second region, a plurality of first gate structures in the first region, the first gate structures being spaced apart from each other by a first distance, a plurality of second gate structures in the second region, the second gate structures being spaced apart from each other by a second distance, a first spacer on sidewalls of the first gate structures, a dielectric layer on the first spacer, a second spacer on sidewalls of the second gate structures, and a third spacer on the second spacer.

Semiconductor devices having multiple gate structures and methods of manufacturing such devices

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Seoul, South Korea

Kwang Yong Yang