Samsung Electronics Co., Ltd.

Kwang-Yong Yang

Bo-un Yoon

Do-hyoung Kim

Kyoung-hwan Yeo

Sang-Jine Park

Yong-Ho Jeon

Keun-Hee Bai

Kee-Sang Kwon

Dohyoung Kim

Jinwook Lee

Ah-Young Cheon

Yongseok Lee

Kyungin Choi

Jeongyun Lee

Yoonhae Kim

Dongwoo Han

Myungil Kang

Haegeon Jung

Keomyoung Shin

Kyungyub Jeon

Young Hee Choi

Jong-chul Park

Sang-sup Jeong

Ki-il Kim

Yun-seung Kang

Seung-mo Ha

Young-Mook Oh

Seung-Jin Mun

Seok-Hyun Lim

A method of fabricating a semiconductor device includes forming first and second active patterns on first and second regions, respectively, of a substrate, forming first and second gate structures on the first and second active patterns, respectively, forming a coating layer to cover the first and second gate structures and the first and second active patterns, and forming a first recess region in the first active pattern between the first gate structures and a second recess region in the second active pattern between the second gate structures.

Semiconductor device, method of fabricating the same, and patterning method

Semiconductor devices including a dummy gate structure on a fin are provided. A semiconductor device includes a fin protruding from a substrate. The semiconductor device includes a source/drain region in the fin, and a recess region of the fin that is between first and second portions of the source/drain region. Moreover, the semiconductor device includes a dummy gate structure overlapping the recess region, and a spacer that is on the fin and adjacent a sidewall of the dummy gate structure.

Semiconductor devices including a dummy gate structure on a fin

Semiconductor devices are providing including a first isolation region configured to define a first fin active region protruding from a substrate, first gate patterns on the first fin active region, and a first epitaxial region in the first fin active region between the first gate patterns. Sidewalls of the first epitaxial region have first inflection points so that an upper width of the first epitaxial region is greater than a lower width of the first epitaxial region.

Semiconductor devices having FIN active regions

An active pattern structure may include a substrate including an active pattern array defined by a plurality of trenches including first to third trenches, and first to third isolation patterns in the first to third trenches, respectively. The active pattern array may include a plurality of first and second active patterns extending in a first direction, and the first to third trenches may be between the first and second active patterns and may include different widths from each other. The active pattern array may include an active pattern group including one of the first active patterns and one of the second active patterns sequentially arranged in a second direction substantially perpendicular to the first direction. Each of the first and second active patterns may have a minute width.

Active pattern structure and semiconductor device including the same

A semiconductor device includes an isolation pattern on a substrate, the isolation pattern having a lower insulating pattern on the substrate, and a spacer to cover side surfaces of the lower insulating pattern, a vertical structure through the isolation pattern to contact the substrate, the vertical structure having a first semiconductor layer on the substrate, a lower end of the first semiconductor layer being at a lower level than a lower surface of the isolation pattern, a second semiconductor layer on the first semiconductor layer, and a third semiconductor layer on the second semiconductor layer, and a gate electrode crossing the vertical structure and extending over the isolation pattern.

Method of forming semiconductor device having multi-channel

Semiconductor devices having fin active regions

Semiconductor device having multi-channel and method of forming the same

A method of forming patterns for a semiconductor device. The method includes: forming a first hard mask layer on a layer which is to be etched; forming a second hard mask layer on the first hard mask layer, wherein the second hard mask layer includes a first portion and a second portion formed underneath the first portion, wherein the first portion and second portion are composed of the same material; etching the first portion to form first patterns; forming spacers covering sidewalls of the first patterns; etching the second portion using the spacers as etch masks to form second patterns; etching the first hard mask layer and the spacers using the second patterns disposed underneath the spacers as etch masks to form third patterns; and etching the layer to be etched, using the third patterns.

Method of forming patterns for semiconductor device

Disclosed is a method and apparatus for detecting a position of a folder in a rotation touch phone having a camera. The rotation touch phone includes a sensor section, a folder, a body, and a connecting section. The folder has a magnet and the sensor section includes first, second and third sensors for detecting the magnet. The first and second sensors are located on the body and the third sensor is located on the connecting section. The connecting section connects the folder to the body. The folder is movable from first, second, third and fourth states. The first state signifies a state in which the folder is initially closed, the second state signifies a state in which the folder has been opened from the first state, the third state signifies a state in which the folder has been rotated substantially 180 degrees from the second state, and the fourth state signifies a state in which the folder has been closed from the third state. The method comprises the steps of: i) receiving a signal from the sensor section notifying that the sensor section detects the magnet; and ii) deciding that the folder is in at least one of the first to fourth states, based on the signal input from the sensor section.

Method and apparatus for detecting a position of a folder in a rotation touch phone having a camera

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Seoul, South Korea

Kwang-Yong Yang