Seoul Semiconductor Co., Ltd.

Kwang Yong Oh

Ki Bum Nam

Myung Jin Kim

Motonobu Takeya

Jong Ik Lee

Young Hyun Kim

Ho Jun Byun

Sang Shin Park

Hyuck Jun Kim

Michael Lim

Ji Youn Oh

Su Yeon Kim

Seung Ryeol Ryu

Hyuck Jung Choi

A light emitting diode package including: a housing; a light emitting diode chip arranged in the housing; a wavelength conversion unit arranged on the light emitting diode chip; a first fluorescent substance distributed inside the wavelength conversion unit and emitting light having a peak wavelength in the cyan wavelength band; and a second fluorescent substance distributed inside the wavelength conversion unit and emitting light having a peak wavelength in the red wavelength band, wherein the peak wavelength of light emitted from the light emitting diode chip is located within a range of 415 nm to 430 nm.

Light emitting device

A light emitting diode package is disclosed. The light emitting diode package includes a light emitting diode chip emitting light and a light transmissive member. The light transmissive member covers at least an upper surface of the light emitting diode chip and includes a light transmissive resin and reinforcing fillers. The reinforcing fillers have at least two side surfaces having different lengths and are dispersed in the light transmissive resin.

Light emitting package free of wavelength conversion material

A display apparatus including a panel substrate, a TFT panel part including a plurality of connection electrodes disposed on an upper surface of the panel substrate, and a light emitting diode part disposed on the TFT panel part and including a plurality of light emitting modules adjacent to each other, in which each of the light emitting modules includes a plurality of pixels, each of the pixels includes three sub-pixels, and the three sub-pixels include blue light emitting diodes, green light emitting diodes, and red light emitting diodes.

Display apparatus and manufacturing method thereof

Light emitting diode package

A light emitting diode package includes: a housing; a light emitting diode chip arranged in the housing; a wavelength conversion unit arranged on the light emitting diode chip; a first fluorescent substance distributed inside the wavelength conversion unit and emitting light having a peak wavelength in the cyan wavelength band; and a second fluorescent substance distributed inside the wavelength conversion unit and emitting light having a peak wavelength in the red wavelength band, wherein the peak wavelength of light emitted from the light emitting diode chip is located within a range of 415 nm to 430 nm.

A display apparatus including a panel substrate including a TFT drive circuit for active matrix driving, a plurality of light emitting diodes, and an anisotropic conductive film electrically connecting the light emitting diodes to the panel substrate, in which the anisotropic conductive film includes an adhesive organic insulation material and conductive particles dispersed in the adhesive organic insulation material.

A light emitting diode apparatus including a substrate, a plurality of light emitting diodes regularly arranged on the substrate and configured to emit ultraviolet (UV) light, the light emitting diodes including first, second, and third sub-light emitting diodes, a plurality of phosphor layers disposed on the light emitting diodes and to convert the wavelength of light emitted from the light emitting diodes, the phosphor layers including first, second, and third phosphor layers disposed on the first, second, and third sub-light emitting diodes, respectively, and a control unit configured to supply power to the light emitting diodes, in which the phosphor layers are spaced apart from each other by a blocking region, and the control unit is configured to cause at least a portion of the light emitting diodes to emit light.

A light emitting diode package including a housing, first and second light emitting diode chips disposed in the housing, and a wavelength conversion part including a phosphor to absorb light emitted from the first light emitting diode chip and emit light having a different wavelength than that emitted from the first light emitting diode chip, in which light emitted from the first light emitting diode chip has a shorter wavelength than light emitted from the second light emitting diode chip, the wavelength conversion part is configured to emit red light having a peak wavelength of 580 nm to 700 nm and exhibiting at least three peaks at a wavelength of 600 nm to 660 nm, and the light emitting diode package is configured to emit white light by mixing light emitted from the first light emitting diode chip, the second light emitting diode chip, and the wavelength conversion part.

Light emitting diode package and light emitting diode module

A light-emitting diode package includes a light-emitting diode chip disposed in a housing, a first phosphor configured to emit green light, and a second and a third phosphor configured to emit red light. White light is configured to be formed by a synthesis of light emitted from the light-emitting diode chip, the first phosphor, the second phosphor, and the third phosphor. At least one of the second and third phosphor is a nitride based phosphor that includes at least one of MSiN, MSiON, and MSiN, where M is one of Ca, Sr, Ba, Zn, Mg, and Eu.

Light emitting diode package and manufacturing method thereof

A light-emitting diode package includes a light-emitting diode chip disposed in a housing, a first phosphor configured to emit green light, and a second phosphor configured to emit red light. White light is configured to be formed by a synthesis of light emitted from the light-emitting diode chip, the first phosphor, and the second phosphor. The second phosphor has a chemical formula of AMF:Mn, A is one of Li, Na, K, Rb, Ce, and NH, and M is one of Si, Ti, Nb, and Ta, and the Mnof the second phosphor has a mole range of about 0.02 to about 0.035 times the M.

A light emitting diode package including a housing, a first light emitting diode chip and a second light emitting diode chip disposed in the housing, and a wavelength conversion part including a phosphor configured to absorb light emitted from the first light emitting diode chip and emit light having a different wavelength than the light emitted from the first light emitting diode chip, in which the light emitted from the first light emitting diode chip has a shorter wavelength than light emitted from the second light emitting diode chip, and the phosphor has a fluorescence intensity of 10 or less at a peak wavelength of light emitted from the second light emitting diode chip, with reference to a maximum fluorescence intensity of 100 at a wavelength of 425 nm to 475 nm on an excitation spectrum of the second light emitting diode chip.

A light emitting diode package includes a light emitting diode chip disposed in a housing, a first phosphor configured to emit green light, and a second phosphor configured to emit red light. White light is configured to be formed by a synthesis of light emitted from the light emitting diode chip, the first phosphor, and the second phosphor. The second phosphor has a chemical formula of AMF:Mn, A is one of Li, Na, K, Rb, Ce, and NH, and M is one of Si, Ti, Nb, and Ta, and the Mnof the second phosphor has a mole range of about 0.02 to about 0.035 times the M.

A display apparatus and a method of manufacturing the same includes a plurality of light emitting diode modules each including a plurality of light emitting diodes regularly arranged therein, and a substrate including a drive unit driving the plurality of light emitting diodes. The substrate is coupled to the plurality of light emitting diode modules such that they oppose each other; and, the drive unit is electrically connected to the plurality of light emitting diodes.

Growing community of inventors

Ansan-si, South Korea

Kwang Yong Oh