Electronics and Telecommunications Research Institute

Intellectual Discovery Co., Ltd.

Kwang-Yong Kang

Hyun-Tak Kim

Byung-Gyu Chae

Sun-Jin Yun

Bong-Jun Kim

Yong-Wook Lee

Seok-Kil Han

Je-Ha Kim

Dong Suk Jun

Gyung-Ock Kim

Han-Cheol Ryu

Sungil Kim

Sung-Lyul Maeng

Sang-Kuk Choi

Doo-Hyeb Youn

Su-Jae Lee

Yoon Ho Song

Mun Cheol Paek

JungWook Lim

Byung Gyu Chae

Min Hwan Kwak

Sung-Youl Choi

Jung-Wook Lim

Seung Beom Kang

Young-Tae Kim

Ho-Young Kim

Min-Hwan Kwak

Seung-Eon Moon

Yong-wook Lee

The exemplary embodiments of the present invention include forming a photoconductor thin film on a front surface of a substrate; forming a photoconductor thin film pattern by patterning the photoconductor thin film; and forming a metal electrode on the photoconductor thin film pattern.

Integrated antenna device module for generating terahertz continuous wave and fabrication method thereof

A terahertz continuous wave generator includes: an optical intensity modulator configured to modulate an optical signal into DSB optical signals; a local oscillator configured to generate a modulation signal for modulating the optical signal inputted to the optical intensity modulator into DSB optical signals; a notch filter configured to filter an optical signal with a specific frequency; an optical fiber amplifier configured to amplify an output signal of the optical intensity modulator; an optical circulator configured to transmit the optical signal inputted to the optical fiber amplifier to the notch filter and transmit the optical signal reflected from the notch filter to an input of the optical intensity modulator; an optical coupler configured to apply the optical signal to the optical intensity modulator; and an OE converter configured to photomix the DSB signals outputted through the notch filter.

Terahertz continuous wave generator

Provided are an abrupt MIT device with variable MIT temperature or voltage, an MIT sensor using the abrupt MIT device, and an alarm apparatus and a secondary battery anti-explosion circuit including the MIT sensor. The MIT device includes an abrupt MIT layer undergoing an abrupt MIT at a transition temperature or a transition voltage and at least two electrode layers contacting the abrupt MIT layer. The transition temperature or the transition voltage varies with at least one of factors including a voltage applied to the electrode layers, a temperature, an electromagnetic wave, a pressure, and a gas concentration that affect the abrupt MIT layer. The MIT sensor is a temperature sensor, an infrared sensor, an image sensor, a pressure sensor, a gas-concentration sensor, or a switch. The alarm apparatus includes the MIT sensor and an alarm-signaling unit connected in series with the MIT sensor. The secondary battery anti-explosion circuit includes a secondary battery, the MIT sensor attached to the secondary battery to sense the temperature of the secondary battery and thus to prevent the possible explosion of the secondary battery, and a protection circuit body powered by the secondary battery.

Programmable MIT sensor using the abrupt MIT device, and alarm apparatus and secondary battery anti-explosion circuit including the MIT sensor

Provided is a lithium secondary battery including a discharge unit capable of delaying or preventing a battery explosion. The lithium secondary battery includes a discharge unit disposed parallel to a battery body. The discharge unit includes a first electrode connected to a positive electrode of the battery body, a second electrode connected to a negative electrode of the battery body, and a discharge material film, disposed between the first electrode and the second electrode, inducing a abrupt discharge above a predetermined temperature. The discharge material film, e.g., a abrupt metal-insulator transition (MIT) material film can induce a abrupt discharge, thereby preventing or delaying a battery explosion.

Lithium secondary battery including discharge unit

An abrupt MIT (metal-insulator transition) device with parallel MIT material layers is provided. The abrupt MIT device includes a first electrode disposed on a certain region of a substrate, a second electrode disposed so as to be spaced a predetermined distance apart from the first electrode, and at least one MIT material layer electrically connecting the first electrode with the second electrode and having a width that allows the entire region of the MIT material layer to be transformed into a metal layer due to an MIT. Due to this configuration, deterioration of the MIT material layer, which is typically caused by current flowing through the MIT material layer, is less likely to occur.

Abrupt metal-insulator transition device with parallel MIT material layers

A switching field effect transistor includes a substrate; a Mott-Brinkman-Rice insulator formed on the substrate, the Mott-Brinkman-Rice insulator undergoing abrupt metal-insulator transition when holes added therein; a dielectric layer formed on the Mott-Brinkman-Rice insulator, the dielectric layer adding holes into the Mott-Brinkman-Rice insulator when a predetermined voltage is applied thereto; a gate electrode formed on the dielectric layer, the gate electrode applying the predetermined voltage to the dielectric layer; a source electrode formed to be electrically connected to a first portion of the Mott-Brinkman-Rice insulator; and a drain electrode formed to be electrically connected to a second portion of the Mott-Brinkman-Rice insulator.

Device using a metal-insulator transition

Provided are a temperature sensor using a metal-insulator transition (MIT) device subject to abrupt MIT at a specific temperature and an alarm including the temperature sensor. The abrupt MIT device includes an abrupt MIT thin film and at least two electrode thin films that contacts the abrupt MIT thin film. The abrupt MIT device generates abrupt metal-insulator transition at a specific transition temperature. The alarm includes a temperature sensor comprising an abrupt MIT device, and an alarm signaling device serially connected to the temperature sensor. Accordingly, the alarm can be manufactured to have a simple circuit and be of a small size by including the temperature sensor using an abrupt MIT device.

Temperature sensor using abrupt metal-insulator transition (MIT) and alarm comprising the temperature sensor

An electron emission device having a high electron emitting rate and a display including the device are provided. The electron emission device using abrupt metal-insulator transition, the device including: a board; a metal-insulator transition (MIT) material layer disposed on the board and divided by a predetermined gap with portions of the divided MIT material layer facing one another; and electrodes connected to each of the portions of the divided metal-insulator transition material layer for emitting electrons to the gap between the portions of the divided metal-insulator transition material layer.

Electron emission device using abrupt metal-insulator transition and display including the same

Provided are a low-voltage noise preventing circuit using an abrupt metal-insulator transition (MIT) device which can effectively remove a noise signal with a voltage less than a rated signal voltage. The abrupt MIT device is serially connected to the electrical and/or electronic system to be protected from the noise signal, and is subject to abrupt MIT at a predetermined voltage. Accordingly, low-voltage noise can be effectively removed.

Low-voltage noise preventing circuit using abrupt metal-insulator transition device

Provided are a memory device that undergoes no structural phase change, maintains a uniform thin film, and can perform a high-speed switching operation, and a method of operating the same. The memory device includes a substrate, an abrupt MIT material layer, and a plurality of electrodes. The abrupt MIT material layer is disposed on the substrate and undergoes an abrupt metal-insulator transition by an energy change between electrons. The plurality of electrodes are brought into contact with the abrupt MIT material layer and are melted by heat to form a conductive path on the abrupt MIT material layer.

Memory device using abrupt metal-insulator transition and method of operating the same

The abrupt metal-insulator transition device includes: an abrupt metal insulator transition material layer including an energy gap of less than or equal to 2 eV and holes within a hole level; and two electrodes contacting the abrupt metal-insulator transition material layer. Here, each of the two electrodes is formed by thermally treating a stack layer of a first layer formed on the abrupt metal-insulator transition material layer and comprising Ni or Cr, a second layer formed on the first layer and comprising In, a third layer formed on the second layer and comprising Mo or W, and a fourth layer formed on the third layer and comprising Au.

Devices using abrupt metal-insulator transition layer and method of fabricating the device

Provided are a phase shifter with a photonic band gap (PBG) structure using a ferroelectric thin film. The phase shifter includes a microstrip transmission line acting as a microwave input/output line and a plurality of tunable capacitors arranged in the microstrip transmission line at regular intervals. Electrodes disposed on a substrate apply DC voltages to the plurality of tunable capacitors. Radio frequency (RF) chokes and quarter wavelength radial-stubs are connected between the electrodes and the microstrip transmission line in order to prevent high frequency signals from flowing into a DC bias terminal. A plurality of PBGS are periodically arrayed on a ground plane of the substrate.

Phase shifter with photonic band gap structure using ferroelectric thin film

An optical device for use in generating a high frequency optical signal includes a light source for generating a pumping light beam, a first oscillator for generating a first light beam with a plurality of modes by using the pumping light beam, an optical element for selecting a first mode from the modes, a second oscillator for generating a second light beam of a second mode by using the selected first mode; and an optical coupler for coupling the selected first mode to the second mode to induce a beat phenomenon therebetween. In the optical device, the first oscillator generates the high frequency optical signal by the beat phenomenon.

Optical device for modulating a high frequency optical signal

A micro etching system using laser ablation includes a laser generator, an optical fiber waveguide, a laser beam focusing device and a sample platform. The laser generator generates an ultraviolet beam, and the optical fiber waveguide carries the laser beam radiated from the laser generator to the material to be etched. The focusing device is provided between the laser generator and optical fiber waveguide and serves to concentrate the laser beam into the optical fiber. The sample platform controls the position of the material to be etched so that the material is etched at a predetermined angle by the beam emitted from the outlet of the optical fiber waveguide.

Micro etching system using laser ablation

Disclosed is a multi-target manipulator for a pulsed laser deposition apparatus. The multi-target manipulator for a pulsed laser deposition apparatus grows a thin film having both a high quality and a repeatability, automatizes a deposition apparatus, and economically performs a pulsed laser deposition, when a thin film is grown by using a pulsed laser deposition apparatus. The multi-target manipulator for a pulsed laser deposition apparatus includes: a driving power providing member which includes a stepping motor and a motion feedthrough thereby providing a rotation driving power to the target disk driving shaft and the target driving motor shaft; a driving power transmission and head supporting member, thereby transmitting a rotation driving power necessary for rotating both the target disk provided from the driving power providing member and the target and supporting the head of the target manipulator; and a head portion, thereby performing rotations of the target disk and the target so as to locate a target material on the focal point of the laser beam.

Growing community of inventors

Daejeon, South Korea

Kwang-Yong Kang