Samsung Electronics Co., Ltd.

Lg Electronics Inc.

Kwang-Wook Lee

Yong-Sun Ko

Tae-hyuk Ahn

Jeong-Sic Jeon

Jung-woo Seo

In-joon Yeo

In-seak Hwang

Jae-Jik Baek

Sang-Jine Park

Soon-Young Yoon

Hee-Won Kang

Bo-un Yoon

Cheol-Woo Park

Young-Ky Kim

Jae-min Ahn

Kyung-Hyun Kim

Kyeong-Cheol Yang

Jeong-Nam Han

Jong-Seon No

Seok-Woo Nam

Ji-Hoon Cha

Yong-Jhin Cho

Byoung-Moon Yoon

Sung-Jea Ko

Sang-jun Lee

Byung-Kwon Cho

In-Seak Hwang

Dae-Hyuk Chung

Seung-Hyun Kong

Byoung-Yong Gwak

In-Sang Jeon

Ho-Kyun An

Yeon-Jin Gil

Ha-Bong Chung

Kee-sang Kwon

Moo-Rak Choi

You-Sun Kim

Disclosed are a supercritical process chamber and an apparatus having the same. The process chamber includes a body frame having a protrusion protruding in an upward vertical direction from a first surface of the body frame and a recess defined by the protrusion and the first surface of the body frame; a cover frame; a buffer chamber arranged between the body frame and the cover frame; and a connector. The buffer chamber includes an inner vessel detachably coupled to the body frame providing a chamber space in the recess and an inner cover detachably coupled to the cover frame. The inner cover is in contact with a first surface of the inner vessel enclosing the chamber space from surroundings. The connector couples the body frame and the cover frame having the buffer chamber arranged therebetween such that the enclosed chamber space is transformed into a process space in which the supercritical process is performed.

Process chamber for a supercritical process and apparatus for treating substrates having the same

An integrated circuit device includes an insulating film on a substrate, a lower wiring layer penetrating at least a portion of the insulating film, the lower wiring layer including a first metal, a lower conductive barrier film surrounding a bottom surface and a sidewall of the lower wiring layer, the lower conductive barrier film including a second metal different from the first metal, a first metal silicide capping layer covering a top surface of the lower wiring layer, the first metal silicide capping layer including the first metal, and a second metal silicide capping layer contacting the first metal silicide capping layer and disposed on the lower conductive barrier film, the second metal silicide capping layer including the second metal.

Integrated circuit device

A method of fabricating a semiconductor device includes forming a gate pattern on a substrate, and etching sides of the gate pattern using a first wet-etching process to form a first recess. The first wet-etching process includes using an etchant containing a first chemical substance including a hydroxyl functional group (&#x2014;OH) and a second chemical substance capable of oxidizing the substrate. The concentration of the second chemical substance is 1.5 times or less the concentration of the first chemical substance.

Method of fabricating semiconductor device

A method of manufacturing a semiconductor device includes forming a bit line on a substrate comprising an active region; forming an interlayer insulating layer covering the bit line on the substrate; forming a first hole at a location of the active region through the interlayer insulating layer; forming a dummy contact layer by filling the first hole; forming a mold layer on the interlayer insulating layer and the dummy contact layer; forming a second hole at a location of the dummy contact layer through the mold layer; removing the dummy contact layer in the first hole through the second hole; forming an epitaxial layer on a portion of the active region, which is exposed at a lower surface of the first hole; and forming a lower electrode on internal surfaces of the first hole and the second hole.

Method of manufacturing semiconductor device

A semiconductor device includes a semiconductor substrate having at least two oblique side surfaces and a first bottom surface in a recessed portion. A gate insulating layer is formed on the recessed portion. A gate electrode is formed on the gate insulating layer. A channel region is formed below the gate electrode. Gate spacers are formed on side surfaces of the gate electrode.

Semiconductor devices including gate structure and method of fabricating the same

A class changing apparatus includes a link unit configured to be linked with a client device to transmit and receive data. The class change apparatus also includes a storage unit configured to store apparatus information including class information of the client device. The class changing apparatus further includes a control unit coupled to the link unit and the storage unit and controlling operations of the class changing apparatus including a class changing operation, wherein the class change operation includes transmitting at least one command including a command for rebranching into the selected class to the client device through the link unit and registering class information as changed class information in the storage unit in response to detecting a class change request.

Changing class of device

An electronic device may include a substrate and a plurality of conductive electrodes on the substrate. Each of the conductive electrodes may have a respective electrode wall extending away from the substrate, and an electrode wall of at least one of the conductive electrodes may include a recessed portion. In addition, an insulating layer may be provided on the electrode wall, and portions of the electrode wall may be free of the insulating layer between the substrate and the insulating layer.

Electronic devices including electrode walls with insulating layers thereon

A semiconductor structure may be formed by a wet etching process using an etchant containing water. The semiconductor structure may include a plurality of patterns having an increased or higher aspect ratio and may be arranged closer to one another. A dry cleaning process may be performed using hydrogen fluoride gas on the semiconductor structure.

Methods of forming patterns and capacitors for semiconductor devices using the same

An electronic device may include a substrate, a conductive layer on the substrate, and an insulating spacer. The conductive electrode may have an electrode wall extending away from the substrate. The insulating spacer may be provided on the electrode wall with portions of the electrode wall being free of the insulating spacer between the substrate and the insulating spacer, and portions of the electrode most distant from the substrate may be free of the insulating spacer. Related methods and structures are also discussed.

Methods of forming electronic devices including electrodes with insulating spacers thereon

An electronic device may include a substrate, a conductive layer on the substrate, and an insulating spacer. The conductive electrode may have an electrode wall extending away from the substrate. The insulating spacer may be provided on the electrode wall with portions of the electrode wall being free of the insulating spacer between the substrate and the insulating spacer. Related methods and structures are also discussed.

Electronic devices including electrodes with insulating spacers thereon

An instantaneous pressure reducing heating and drying apparatus for an object, such as a wafer, includes a pressure reducing chamber; a vacuum pump for reducing a pressure in the pressure reducing chamber to below atmospheric pressure; a drying chamber installed within the pressure reducing chamber for drying the object that is loaded in the drying chamber; a pressure regulating valve installed in a wall of the drying chamber, wherein when the pressure regulating valve is opened a pressure in the drying chamber is instantaneously reduced to the pressure of the pressure reducing chamber; and a heating means for heating the drying chamber. In operation, the vacuum pump reduces a pressure of the pressure reducing chamber to below atmospheric pressure, and the pressure regulating valve installed in a wall of the drying chamber opens thereby instantaneously reducing the pressure the drying chamber to the reduced pressure of the pressure reducing chamber.

Method for drying a wafer and apparatus for performing the same

In a cleaning solution and a method of cleaning a semiconductor substrate, the cleaning solution includes about 1 to about 10 percent by weight of sulfuric acid, about 0.5 to about 5 percent by weight of aqueous hydrogen peroxide solution, and about 85 to about 98.5 percent by weight of hydrogen fluoric acid solution. Various polymers attached to a metal wiring formed on a substrate are removed by immersing the substrate into the cleaning solution. The substrate is rinsed to remove the cleaning solution remaining on the substrate. Thus, the polymers can be completely removed without damage to the metal wiring and an underlying oxide film.

Cleaning solution and method of cleaning a semiconductor device using the same

A semi-soft handoff method, in accordance with the present invention is described. In the instance a base station makes use of multiple frequency channel, a mobile station moves inter-cell and service on a frequency that processes the present call within the destination cell to be moved to is not offered, to guarantee the call's continuance, the base station examines all adjacent cells' frequency assignment conditions and sets all cells' multiple common frequencies. Furthermore, the base station manages the traffic within a common frequency selected from the multiple common frequencies. After receiving a handoff requirement message, the base station examines for the common frequency with a minimum load. Next, the base station executes an inter-cell inter-frequency hard handoff to the corresponding common frequency and soft handoff to the destination cell by using the common frequency.

Semi-soft handoff method that uses multiple common frequency

A code set generating method in a mobile communications system having Nf frequency channels and Np phase channels. In the method, a code length Nc is obtained by Nf&times;Np, a minimum distance Nd between codewords in a code set and frequency diversity Nfd are determined, code sets are detected according to Nc, Nd, and Nfd, a code set is selected, which shows such a Hamming distance distribution among code words that minimizes demodulation errors from the detected code sets, and the code set is stored in a mapping table of a demodulator.

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Seongnam-si, South Korea

Kwang-Wook Lee