Samsung Display Co., Ltd.

Kobe Steel, Ltd.

Kwang Suk Kim

Byung Hoon Kang

Hyun Jin Cho

Byoung Kwon Choo

Woo Jin Cho

Joon-Hwa Bae

Jun Hyuk Cheon

Joon Seok Park

Yeon Keon Moon

Tae Sang Kim

Geunchul Park

Jun Hyung Lim

Gun Hee Kim

Toshihiro Kugimiya

Je Hun Lee

Byung Du Ahn

Aya Miki

Hiroshi Goto

Kyung Jin Jeon

Kyoung Won Lee

Shinya Morita

Ji Hun Lim

Yeon Gon Mo

Yeon Hong Kim

Kyungjin Jeon

An organic light emitting diode display device includes a substrate, a first oxide transistor, a second oxide transistor, and a sub-pixel structure. The substrate has a display region including a plurality of sub-pixel regions and a peripheral region located in a side of the display region. The first oxide transistor is disposed in the peripheral region on the substrate, and includes a first oxide semiconductor pattern that includes tin (Sn). The second oxide transistor is disposed in the sub-pixel regions each on the substrate, and includes a second oxide semiconductor pattern. The sub-pixel structure is disposed on the second oxide transistor.

Organic light emitting diode display device and method of manufacturing an organic light emitting diode display device

An organic light emitting display device may include a display panel, a source driving circuit, and a voltage generator. The display panel may include a pixel circuit including a driving transistor to drive an organic light emitting diode. The driving transistor may have four independent terminals including first and second gate electrodes. The source driving circuit may provide a data voltage to the pixel circuit. The voltage generator may apply an independent bias voltage to the second gate electrode of the driving transistor to control a driving voltage range of the driving transistor.

Organic light emitting display device and method of driving the same

A method for manufacturing a display device includes forming a first gate metal wire on a substrate, forming a first insulation layer that covers the first gate metal wire, forming a second gate metal wire on the first insulation layer, forming a second main insulation layer that covers the second gate metal wire, forming a second auxiliary insulation layer on the second main insulation layer, forming an exposed portion of an upper surface of the second main insulation layer by polishing the second auxiliary insulation layer, and forming a first data metal wire on the second main insulation layer and the second auxiliary insulation layer.

Display device

Display device and manufacturing method thereof

A method of manufacturing a display device includes: forming an active layer on a substrate; forming a first insulation layer covering the active layer; forming a gate metal line on the first insulation layer; forming a third insulation layer covering the gate metal line and including a silicon oxide; forming a fourth insulation layer including a silicon nitride on the third insulation layer; forming a fifth insulation layer including a silicon oxide on the fourth insulation layer; arranging a blocking member over a region in which the active layer and the gate metal line overlap; forming a fifth auxiliary insulation layer by doping nitrogen ions in the fifth insulation layer; and exposing a part of an upper surface of the fourth insulation layer by removing a portion of a fifth main insulation layer of the fifth insulation layer which does not overlap the fifth auxiliary insulation layer.

Display device and method of manufacturing the same

The inventive concept relates to a thin film transistor and a thin film transistor array panel and, in detail, relates to a thin film transistor including an oxide semiconductor. A thin film transistor according to an exemplary embodiment of the inventive concept includes: a gate electrode; a gate insulating layer positioned on or under the gate electrode; a first semiconductor and a second semiconductor that overlap the gate electrode with the gate insulating layer interposed therebetween, the first semiconductor and the second semiconductor contacting each other; a source electrode connected to the second semiconductor; and a drain electrode connected to the second semiconductor and facing the source electrode, wherein the second semiconductor includes gallium (Ga) that is not included in the first semiconductor, and a content of gallium (Ga) in the second semiconductor is greater than 0 at. % and less than or equal to about 33 at. %.

Thin film transistor, thin film transistor array panel, and manufacturing method of thin film transistor

Growing community of inventors

Yongin, South Korea

Kwang Suk Kim