Hyundai Electronics Industries Co. Ltd.

Kwang-Soo Kim

Jae-Kap Kim

Kyung-Dong Yoo

Disclosed is a method of manufacturing a complementary metal-oxide semiconductor device. The method includes the steps of: forming a plurality of field oxide layers; forming a screen oxide film on each surface of the first, second, third and fourth active regions; forming a first mask pattern for exposing first and second active regions; forming a N-type well to a selected depth from each surface of the exposed first and second active regions; forming a N-type ion implanted layer right beneath each surface of the first and second active regions; removing the first mask pattern; forming a second mask pattern for exposing the third active region; forming a P-type well to a selected depth from the surface of the exposed third active region; forming a first P-type ion implanted layer right beneath the surface of the third active region; removing the second mask pattern; forming a third mask pattern for exposing first and fourth active regions; forming a second P-type ion implanted layer for controlling a third threshold voltage right beneath each surface of the first and fourth active regions; and forming a gate electrode including a gate oxide film on the first, second, third and fourth active regions.

Method of manufacturing a complementary metal-oxide semiconductor device

A method for fabricating a CMOS device having BILLI (buried implanted layers for lateral isolation) structure capable of effectively preventing latch-up is disclosed, having the following steps. A mask pattern is formed on the semiconductor substrate of a predetermined conductivity type to expose a region where the MOS transistor, having a same conductivity type as that of the substrate, is to be formed wherein the mask pattern has a vertical boundary face having a gradual slope. A buried layer is then formed in the form of island by ion-implanting the impurity ions into the substrate to pass through the mask pattern, the buried layer having a same conductivity type as that of the substrate, and being formed to be continuous under the vertical boundary face of the mask pattern.

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Kyoungki-do, South Korea

Kwang-Soo Kim