Globalfoundries Singapore Pte. Ltd.

Kwang Sing Yew

Juan Boon Tan

Wanbing Yi

Curtis Chun-I Hsieh

Ramasamy Chockalingam

Jianxun Sun

Tupei Chen

A device may include a first conductive element and an interlevel dielectric arranged over the first conductive element. The device may further include a dual damascene opening including a first end, a second end, and sidewalls extending between the first and second ends, the sidewalls extending through the interlevel dielectric. A metal-insulator-metal (MIM) stack may line the dual damascene opening. The MIM stack may include a first conductive liner lining the sidewalls and the second end of the dual damascene opening, an insulator layer lining the first conductive liner, and a second conductive liner lining the insulator layer. A first metal interconnect may be disposed in and filling the dual damascene opening lined with the MIM stack.

Metal-insulator-metal capacitor (MIMCAP) and methods of forming the same

Methods of forming planar RRAM and vertical RRAM with tip electrodes and the resulting devices are provided. Embodiments include forming a first metal oxide layer on a first dielectric layer; forming and patterning a mask layer over the first metal oxide layer; etching the first metal oxide through the mask layer to form openings for a first and second metal electrodes; removing the mask layer; forming the first and second metal electrodes in the openings; and forming a second metal oxide layer over the first and second metal electrodes, wherein the first and second metal electrodes are v-shaped in top view with tips of the first and second metal electrodes facing each other and a portion of the second metal oxide layer being formed between the tips of the first and second electrodes.

Vertical and planar RRAM with tip electrodes and methods for producing the same

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Singapore, Singapore

Kwang Sing Yew