Samsung Electronics Co., Ltd.

Yonsei University

Kwang-Shin Lim

Jung-Dae Park

Seung-Ki Chae

Pil-kwon Jun

Tae-Hyo Choi

Myoung-Ok Han

Pil-Kwon Jun

Hun-Jung Yi

Yang-Koo Lee

Yong-Kyun Ko

Sang-Mi Lee

Se-Yeon Kim

Ki-Hyun Kim

Dong-Soo Lee

Sang-Mun Chon

Sang-Oh Park

Da-Hee Lee

Hyun-Young Park

JungDae Park

Dong-Won Hwang

In-Hoi Doh

Min-Soo Suh

Ami Choi

Ji-Won Eom

Kyung-Soo Chae

Sunghan Jung

An evaluation system of block copolymer patterns includes a supplier, a plurality of analyzers, and a homopolymer interference remover. The supplier provides a sample including a block copolymer and a homopolymer. The analyzers measure a molecular weight of the block copolymer in the sample, measure a preliminary block ratio, the preliminary block ratio corresponding to a total ratio in the sample of each block in the block copolymer, and selectively measure a ratio of the homopolymer in the sample. The homopolymer interference remover subtracts the ratio of the homopolymer from the preliminary block ratio.

Evaluation systems of block copolymer patterns

A conductivity detector includes a flow channel, an electrode arrangement, and a detector. The flow channel has a tube shape with a channel diameter through which a solution including ion components flows. The electrode arrangement is on the flow channel and includes at least an anode and at least a cathode. The anode and cathode are spaced apart by an electrode gap less than or equal to the channel diameter. The detector is connected to the electrode arrangement to detect electrical conductivity of the ion components.

Conductivity detector and ion chromatography system including the same

A method of manufacturing a semiconductor device includes preparing a substrate on which a fuze line containing copper is formed. The method further includes cutting the fuze line by emitting a laser beam, and applying a composition for etching copper to the substrate to finely etch a cutting area of the fuze line and to substantially remove at least one of a copper residue and a copper oxide residue remaining near the cutting area. The composition for etching copper includes about 0.01 to about 10 percent by weight of an organic acid, about 0.01 to 1.0 percent by weight of an oxidizing agent, and a protic solvent.

Methods of manufacturing a semiconductor device using compositions for etching copper

In a composition for removing a polymeric contaminant that may remain on an apparatus for manufacturing a semiconductor device and a method of removing a polymeric contaminant using the composition, the composition includes from about 5 to 10 percent by weight of a fluoride salt, from about 5 to 15 percent by weight of an acid or a salt thereof, and from about 75 to 90 percent by weight of an aqueous solution of glycol. The composition can effectively remove the polymeric contaminant from the apparatus within a relatively short period of time, and suppress damages to parts of the apparatus.

Composition for removing a polymeric contaminant and method of removing a polymeric contaminant using the same

A composition for removing a photoresist includes about 5 to about 20 percent by weight of an alcoholamide compound, about 15 to about 60 percent by weight of a polar aprotic solvent, about 0.1 to about 6 percent by weight of an additive, and pure water. The alcoholamide compound is chemically structured as follows: where Ris a hydroxyl group or a hydroxyalkyl group, and Ris a hydrogen atom or a hydroxyalkyl group.

Composition for removing a photoresist, method of preparing the composition, method of removing a photoresist and method of manufacturing a semiconductor device using the composition

An etching solution for silicon oxide may be used in a process for enlarging an opening formed through a silicon oxide layer. The etching solution includes about 0.2 to about 5.0 percent by weight of a hydrogen fluoride solution, about 0.05 to about 20.0 percent by weight of an ammonium fluoride solution, about 40.0 to about 70.0 percent by weight of an alkyl hydroxide solution and remaining water. The etching solution may etch the silicon oxide layer without damage to a metal silicide layer exposed by the opening.

Etching solution for silicon oxide method of manufacturing a semiconductor device using the same

An exemplary etching composition includes about 0.1 to 8% by weight of hydrogen fluoride, about 10 to 25% by weight of ammonium fluoride, about 0.0001 to 3% by weight of a non-ionic polymer surfactant, and water. Using the composition in a wet etching process, an oxide layer may be selectively removed while a pattern or storage electrode including polysilicon may be effectively passivated. The oxide layer may be removed with a high etching selectivity, while at the same time minimizing damage to the polysilicon layer.

Etching composition, method of preparing the same, method of etching an oxide film, and method of manufacturing a semiconductor device

An apparatus includes a chamber for containing a fluid, a guide seated in the chamber, and a transfer robot for loading and/or unloading a plurality of wafers to and/or from the guide. The wafers are located on the guide. The guide has a supporting member for supporting a wafer and a stopper member for preventing the wafer from being inclined over a predetermined range. The stopper member is in contact with a wafer edge disposed at a higher position than a wafer edge supported by the supporting member. A wafer guide has a stopper member to prevent adjacent wafers from being inclined and coming in contact with each other. Therefore, it is possible to suppress a poor drying such as water spots (or watermarks) produced when wafers are adhered to each other in a drying process.

Apparatus for manufacturing integrated circuit device

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Yongin-si, South Korea

Kwang-Shin Lim