Samsung Electronics Co., Ltd.

Gwangju Institute of Science and Technology

Kwang-seok Kim

Kee-won Kim

Sung-chul Lee

Ung-hwan Pi

Sun-ae Seo

Young-Man Jang

Young-jin Cho

In-Jun Hwang

Ji-young Bae

Seung-Jun Lee

Hyung-soon Shin

Ung-Hwan Pi

Jai-kwang Shin

Sung-hoon Choa

Whan-Kyun Kim

Sang-hwan Park

Ho-jung Kim

In-jun Hwang

Sung-Chul Lee

Chang-won Lee

U-in Chung

Seung-Yeon Lee

Mathias Kläui

Un-hwan Pi

Seung-kyo Lee

Young-man Jang

Provided is a magnetic memory device. The magnetic memory device includes a first magnetization layer, a tunnel barrier disposed on the first magnetization layer, a second magnetization layer disposed on the tunnel barrier, and a spin current assisting layer disposed on at least a portion of a sidewall of the second magnetization layer.

Magnetic memory device

A magnetoresistive random access memory device includes a free layer, a tunnel barrier layer, an insulation barrier layer, a pinned layer, and a vertical polarizer structure. The tunnel barrier layer and the insulation barrier layer directly contacts different surfaces of the free layer. The pinned layer structure contacts the tunnel barrier layer and includes at least one pinned layer. The vertical polarizer structure contacts the insulation barrier layer and includes a plurality of magnetization multi-layered structures sequentially stacked. Each magnetization multi-layered structure includes a non-magnetic layer and a magnetic layer sequentially stacked. The pinned layer and the magnetic layer have magnetization directions anti-parallel to each other.

Method of manufacturing magnetoresistive random access memory device

Magnetoresistive random access memory device and method of manufacturing the same

Magnetic structures, methods of forming the same, and memory devices including a magnetic structure, include a magnetic layer, and a stress-inducing layer on a first surface of the magnetic layer, a non-magnetic layer on a second surface of the magnetic layer. The stress-inducing layer is configured to induce a compressive stress in the magnetic layer. The magnetic layer has a lattice structure compressively strained due to the stress-inducing layer.

Magnetic structures, methods of forming the same and memory devices including a magnetic structure

Magnetoresistive structures, magnetic random-access memory devices including the same, and methods of manufacturing the magnetoresistive structure, include a first magnetic layer having a magnetization direction that is fixed, a second magnetic layer corresponding to the first magnetic layer, wherein a magnetization direction of the second magnetic layer is changeable, and a magnetoresistance (MR) enhancing layer and an intermediate layer both between the first magnetic layer and the second magnetic layer.

Magnetoresistive structures, magnetic random-access memory devices including the same and methods of manufacturing the magnetoresistive structure

A memory device using a spin hall effect, and methods of manufacturing and operating the memory device, include applying a first operational current to a bit line of the memory device such that a spin current is applied to a magnetic tunnel junction (MTJ) cell coupled to the bit line due to a material in the bit line, wherein the bit line is electrically connected to a word line via the MTJ cell, and the word line intersects the bit line.

Memory device using spin hall effect and methods of manufacturing and operating the memory device

Magnetic memory devices may include a substrate, a circuit device on the substrate, a plurality of lower electrodes electrically connected to the circuit device, a magnetic tunnel junction (MTJ) structure commonly provided on the plurality of the lower electrodes, and a plurality of upper electrodes on the MTJ structure. The MTJ structure may include a plurality of magnetic material patterns and a plurality of insulation material patterns separating the magnetic material patterns from each other.

Magnetic memory devices

Magnetic memory devices include a magnetoresistive cell including a free layer having a variable magnetization direction and a pinned layer having a fixed magnetization direction, a bit line on the magnetoresistive cell and including a spin Hall effect material layer exhibiting a spin Hall effect and contacting the free layer; and a lower electrode under the magnetoresistive cell. A voltage is applied between the bit line and the lower electrode so that current passes through the magnetoresistive cell.

Magnetic memory devices and methods of writing data to the same

Magnetic memory devices, and methods of operating the same, include a magnetoresistive element including a free layer, a pinned layer, and a separation layer between the free layer and the pinned layer. The devices, and methods, further include a first conductive line connected to the free layer and configured to apply a Rashba field to, or induce the Rashba field in, the free layer, and a second conductive line spaced apart from the free layer and configured to apply an external magnetic field to the free layer. A magnetization direction of the free layer is switchable by application of the Rashba field and the external magnetic field to the free layer.

Magnetic memory devices and methods of operating the same

Magnetoresistive elements, and memory devices including the same, include a free layer having a changeable magnetization direction, a pinned layer facing the free layer and having a fixed magnetization direction, and an auxiliary element on a surface of the pinned layer. The auxiliary element has a width smaller than a width of the pinned layer, and a magnetization direction fixed to a direction the same as a direction of the fixed magnetization direction of the pinned layer.

Magnetoresistive elements and memory devices including the same

Oscillators and method of operating the same are provided, the oscillators include a magnetic layer, and a magnetization fixing element configured to fix a magnetization direction of the magnetic layer. The oscillators generate a signal by using precession of a magnetic moment of the magnetic layer.

Oscillators and method of operating the same

Magnetoresistive elements, and memory devices including the same, include a pinned layer having a fixed magnetization direction, a free layer corresponding to the pinned layer, and a protruding element protruding from the free layer and having a changeable magnetization direction. The free layer has a changeable magnetization direction. The protruding element is shaped in the form of a tube. The protruding element includes a first protruding portion and a second protruding portion protruding from ends of the free layer facing in different directions.

Magnetoresistive elements having protrusion from free layer and memory devices including the same

A storage node of a magnetic memory device includes: a lower magnetic layer, a tunnel barrier layer formed on the lower magnetic layer, and a free magnetic layer formed on the tunnel barrier. The free magnetic layer has a magnetization direction that is switchable in response to a spin current. The free magnetic layer has a cap structure surrounding at least one material layer on which the free magnetic layer is formed.

Storage nodes, magnetic memory devices, and methods of manufacturing the same

An oscillator and a method of operating the same are provided, the oscillator may include a free layer, a pinned layer on a first surface of the free layer, and a reference layer on a second surface of the free layer. The free layer may have a variable magnetization direction. The pinned layer may have a pinned magnetization direction. The reference layer may have a magnetization direction non-parallel to the magnetization direction of the pinned layer.

Growing community of inventors

Seongnam-si, South Korea

Kwang-seok Kim