Korea University Research and Business Foundation

Lg Chem, Ltd

Lg Display Co., Ltd.

Kwang Seob Jeong

Bit Na Yoon

Hang Beum Shin

Dong Sun Choi

Ju Yeon Jeong

Kiseok Chang

Jihwan Jung

JeongMin Moon

SoonShin Jung

Young Do Jeong

Yun Chang Choi

Yunchang Choi

The present invention relates to a method of manufacturing gallium nitride quantum dots, and more particularly, to a method of manufacturing gallium nitride quantum dots doped with metal ions, which uses a wet-based synthesis method capable of lowering the fluorescence energy of pure gallium nitride by introducing metal ions into pure gallium nitride.

Method for manufacturing gallium nitride quantum dots doped with metal ions

The present disclosure relates to an infrared device using intra-band electron transition of non-stoichiometric quantum dots and, more specifically, to non-stoichiometric quantum dot nanoparticles and an infrared device comprising the nanoparticles, in which the nanoparticles comprise quantum dot cores and nonthiol ligands bonded to the core and emits infrared rays from electron transition between discrete energy levels in the band. The infrared device has an effect of emitting infrared rays, particularly, mid-infrared rays or far-infrared rays, by using the electron transition between discrete energy levels in the band of quantum dots in which the proportion of a metal is higher than that of a chalcogen. In addition, the quantum dots are prepared by containing nonthiol ligands, and thus, compared with a conventional thiol ligand, ligand substitution is very easy while the n-type doping of quantum dots is maintained.

Intraband transition-based infrared device of nonstoichiometric quantum dots

A biosensor comprising a substrate, a gate electrode provided on the substrate, an insulating layer provided on the gate electrode, a source electrode and a drain electrode, provided on the insulating layer, respectively, an n-type channel provided between the source electrode and the drain electrode, and a quantum dot layer provided on the n-type channel and provided so as to have electronic transition energy capable of resonating with vibration energy of a target biological material.

Quantum dot biosensor

Provided is a method of manufacturing gallium nitride quantum dots. The method includes the steps of: preparing a gallium precursor solution by heating a mixture prepared by dissolving a gallium halide and an organic ligand in a solvent; heating the gallium precursor solution to obtain a heated gallium precursor solution; hot-injecting a nitrogen precursor into the heated gallium precursor solution at a heating temperature to produce gallium nitride; growing the gallium nitride while maintaining the heating temperature, thereby producing a growth-completed gallium nitride; and cooling a solution including the growth-completed gallium nitride to produce gallium nitride quantum dots in a colloid state.

Method of manufacturing gallium nitride quantum dots

A gas detecting sensor including a substrate, a gate electrode provided on the substrate, an insulating layer provided on the gate electrode, a source electrode and a drain electrode, provided on the insulating layer, respectively, an n-type channel provided between the source electrode and the drain electrode, and a quantum dot layer provided on the n-type channel and provided so as to have electronic transition energy capable of resonating with vibration energy of a target gas molecule.

Gas detecting sensor

Growing community of inventors

Seoul, South Korea

Kwang Seob Jeong