Samsung Electronics Co., Ltd.

Lg Display Co., Ltd.

Carima Co., Ltd

Kwang-Min Lee

Kyoung-won Na

Tae-Yon Lee

Gwi-Deok Ryan Lee

Beomsuk Lee

Dongmo Im

Dong-mo Im

Seokjin Kwon

Seok-jin Kwon

Jung-wook Lim

Masaru Ishii

Ju Hwan Jung

Beom-suk Lee

Seung-Hoon Yang

Hyoung Soo Ko

Hae-hyeon Jeong

Won-Tae Kim

Won Joo Kim

Hyeyun Park

Doo Cheol Park

Mi-Ra Kim

Min-Woo Kim

Hoon Moo Choi

Seok Lee

Myung-Sun Kim

Tae Yon Lee

Taeyon Lee

Jung Bin Yun

Beom Suk Lee

Doo Won Kwon

In Gyu Baek

Sungchul Kim

Kyoung Won Na

Gwideok Ryan Lee

Gwideokryan Lee

Seung-su Lee

Hak-jae Kim

Hee Woo Park

Seung Hyuk Chang

Wonjoo Kim

Hyoungsoo Ko

Sung-eun Song

Hyeon-soo Cho

Ui-hyun Kim

Kyung-mi Ha

Seok Jin Kwon

A 3D printer according to an embodiment of the disclosure includes: a resin tank accommodating a resin material; a molding plate movable up and down in the resin tank, and supporting a printed object formed by stacking a plurality of unit forming layers in sequence; an up-and-down movement actuator actuating at least one of the resin tank and the molding plate to move up and down; an exposure unit emitting light toward the molding plate; and a lens sheet including a first material layer including a molding surface facing the molding plate and a light receiving surface facing the exposure unit, disposed between the molding plate and the exposure unit, formed with a plurality of fine lens units for converging and diffusing the light from the exposure unit on one surface, and having a high refractive index, and a second material layer including a concavo-convex portion to be engaged with the fine lens unit of the first material layer, and having a low refractive index.

3D printer

An image sensor includes a substrate, first and second insulating structures, a first wiring structure, a through via, and first and second connection patterns. The substrate includes a sensor array region and a pad region. The first insulating structure is disposed on a second surface of the substrate. The first wiring structure is formed in the first insulating structure and includes first conductive layers and first vias. The through via passes through the substrate in the pad region and connects to the first wiring structure. The first connection pattern is connected to the first wiring structure. The second insulating structure is disposed on a fourth surface of the first insulating structure. The second connection pattern is connected to the first connection pattern. The first conductive layers include a first wiring, and a second wiring spaced farther from the substrate than the first wiring. The through via contacts the second wiring.

Image sensor and method of fabricating the same

Image sensors are provided. An image sensor includes a color filter layer. The image sensor includes a metal structure adjacent a sidewall of the color filter layer. The image sensor includes an insulating layer on the color filter layer. Moreover, the image sensor includes an electrode layer on the insulating layer. Methods of forming image sensors are also provided.

Image sensors and methods of forming image sensors

An image sensor includes a substrate having a first surface and a second surface opposite to each other, a first floating diffusion region provided in the substrate and being adjacent to the first surface, a through-electrode provided in the substrate and electrically connected to the first floating diffusion region, an insulating structure, a bottom electrode, a photoelectric conversion layer, and a top electrode sequentially stacked on the second surface, a color filter buried in the insulating structure, and a top contact plug penetrating the insulating structure to connect the bottom electrode to the through-electrode.

Image sensor and method of manufacturing the same

An image sensor of reduced chip size includes a semiconductor substrate having an active pixel region in which a plurality of active pixels are disposed and a power delivery region in which a pad is disposed. A plurality of first transparent electrode layers is disposed over the semiconductor substrate, respectively corresponding to the plurality of active pixels. A second transparent electrode layer is integrally formed across the active pixels. An organic photoelectric layer is disposed between the plurality of first transparent electrode layers and the second transparent electrode layer. An interconnection layer is located at a level that is the same as or higher than an upper surface of the pad with respect to an upper main surface of the semiconductor substrate. The interconnection layer extends from the pad to the second transparent electrode layer, and includes a connector electrically connecting the pad and the second transparent electrode layer.

Image sensor having an interconnection layer connecting to stacked transparent electrodes and covering a black pixel region

Provided is an image sensor including an organic photoelectric layer capable of enhancing color reproduction. An image sensor includes a semiconductor substrate including a plurality of pixel regions spaced apart from each other and an isolation region therebetween. Each of the plurality of pixel regions has a unit pixel. The image sensor also includes a device isolation layer in the isolation region and surrounding the unit pixel, a first transparent electrode layer, an organic photoelectric layer, and a second transparent electrode layer. The image sensor further includes a via plug electrically connected to the first transparent electrode layer, and arranged between the device isolation layers in the isolation region. The via plug passes through the isolation region. The first transparent electrode layer, the organic photoelectric layer and the second transparent electrode layer are sequentially arranged over the semiconductor substrate.

Image sensor including a plurality of pixel regions and an isolation region including device isolation structures

Image sensors according to some embodiments of the inventive concepts may include a pixel array are including a plurality of pixels, a peripheral area adjacent the pixel array unit, and an organic photoelectric converting layer including a first portion positioned on the pixel area and a second portion positioned on the peripheral area. The second portion may be separated from the first portion.

Image sensors and methods for manufacturing the same

An image sensor having active, peripheral and dummy regions is provided as follows. A dummy through electrode is disposed in the substrate. An active through electrode is disposed in the substrate. An insulation structure in which a color filter is embedded is disposed on the substrate. A dummy bottom electrode is disposed on the insulation structure and connected electrically to the dummy through electrode. An active bottom electrode is disposed on the insulation structure and connected electrically to the active through electrode. A photoelectric conversion layer is disposed on the insulation structure. A top electrode is disposed on the photoelectric conversion layer and the dummy bottom electrode. The top electrode is connected electrically to the dummy bottom electrode. The photoelectric conversion layer is interposed between the top electrode and the active bottom electrode which are separated from each other.

Image sensor

Image sensor having an interconnection covering a black pixel region surrounding an active pixel region

A liquid crystal display device includes a liquid crystal panel including first and second substrates and a liquid crystal layer between the first and second substrates; a backlight unit under the liquid crystal panel; a bottom frame including a horizontal surface and first, second, third, and fourth side surfaces, the first side surface corresponding to a first edge of the liquid crystal panel and being opposite to the second side surface, wherein the liquid crystal panel has a size larger than the bottom frame such that a side of the liquid crystal panel protrudes beyond the bottom frame; a main frame including a first guide portion corresponding to the first edge and a second guide portion corresponding a second edge of the liquid crystal panel opposite to the first edge; and an adhesive covering the side of the liquid crystal panel and an outer side of the third and fourth side surfaces.

Liquid crystal display device

Provided is an image sensor including a semiconductor substrate having a trench and having a first conductivity type, a photoelectric conversion layer formed in the semiconductor substrate below the trench to have a second conductivity type, first and second transfer gate electrodes provided in the trench covered with a gate insulating layer, a first charge-detection layer formed in the semiconductor substrate adjacent to the first transfer gate electrode, and a second charge-detection layer formed in the semiconductor substrate adjacent to the second transfer gate electrode.

Image sensors having transfer gate electrodes in trench

Growing community of inventors

Seoul, South Korea

Kwang-Min Lee