Industrial Technology Research Institute

Kwang-Kuo Shih

Ming-Huang Hong

Biing-Jye Lee

Chao-Nien Huang

Chiu-Ling Chen

Chin-Yuan Chen

Chien-Chia Chiu

Man-Fung Huang

A high efficiency white light emitting diode, having a light emitting diode chip, a transparent substrate, a transparent Ohmic electrode, a reflection layer, a contact diode and covered with submount with a conductive trace. The transparent substrate having a rough surface is disposed on a first surface of the chip. The transparent Ohmic electrode is disposed on a second surface of the chip and coupled with the contact electrode. The submount with the conductive trace used to carry the chip has a high thermal conductivity. The conductive trace is electrically connected to the contact electrode on the chip by soldering material. The surface of the chip is covered with fluorescent paste to absorb a portion of the light generated by the light emitting diode and to emit a complementary light, so that the observer can observe a white light.

High efficiency white light emitting diode

A laser diode for digital versatile disks or other purposes and its fabricating method are disclosed. The fabrication does not require any regrowth steps during the MOCVD process or the formation of nitride or oxide to serve as dielectrics, thus significantly simplifying the fabrication process. Further, the laser diode can operate with a relatively low threshold current due to its excellent current confinement. The laser diode for digital versatile disk is made of AlGaInP alloy, in which a layer of Al,Ga,As, where x>0.8, is formed between the AlGaInP cladding layers. The layer of Al,Ga,As is then oxidized in a hot vapor atmosphere to form AlO,that has at least one opening formed thereon. The AlO,layer serves as a current confinement layer and can provide excellent current confinement. The AlO,layer can also serve as a dielectric layer in the ridge structure.

Laser diode for digital versatile disks and method of fabricating the same

A method for forming P-type gallium nitride is disclosed in the invention. In this method, Mg--H can be completly discomposed by use of an annealing process, thereby entirely dissociating the hydrogen atoms from the gallium nitride, while the nitrogen atoms are not dissociated from the gallium nitride. Therefore, the P-type gallium nitride having high conductivity is obtained and V.sub.N gap defects created in the gallium nitride do not occur. During the annealing process, nitrogen flux is added around the gallium nitride to prevent decomposition of the gallium nitride. The above-mentioned nitrogen flux can be generated by use of RF plasma, electron cyclotron resonance (ECR) or ion beam. Furthermore, since a forward current is provided across the P--N junction of the gallium nitride, the Mg--H inside the magnesium-doped gallium nitride can be decomposed by just increasing the temperature to 175.degree. C. Therefore, in the invention, when a diode structure is manufactured with gallium nitride, the hydrogen atoms can be dissociated from the gallium nitride in a low-temperature process, thereby activating the magnesium (acceptor), such that the conductivity of the P-type gallium nitride is further increased and V.sub.N gap defects caused by a high-temperature process are prevented.

Method for forming P-type gallium nitride

Growing community of inventors

Chu-Tung Chen, Taiwan

Kwang-Kuo Shih