Hynix Semiconductor Inc.

Skhynix Inc.

Kwang Jun Cho

Kie Bong Ku

You Sung Kim

Kyong Min Kim

Jong Min Lee

Keun Kook Kim

Ki Seon Park

Jun Hyun Chun

Dong Woo Shin

Tae Woo Kim

An image sensor for reducing a sampling time by shortening a stabilization duration is provided. The image sensor includes a pixel unit, a sampling unit sampling a signal from an output node of the pixel unit, a sinking unit sinking current from the output node of the pixel unit, and a current controller controlling the amount of current in the sinking unit.

Image sensor

There is provided an image sensor, including an input control unit configured to control signal paths between a plurality of pixels and a plurality of sampling units and supplying outputs from the plurality of pixels in row units to the plurality of sampling units during a normal operation, while supplying the outputs from the plurality of pixels by color, to the plurality of sampling units during a binning operation; and an output control unit configured to control signal paths between the plurality of sampling units and an amplification unit and sequentially supplying outputs from the plurality of sampling units to the amplification unit during the normal operation while simultaneously supplying the outputs from the plurality of sampling units to the amplification unit during the binning operation.

Image sensor supporting a binning operation using switches

An image sensor includes a dummy pixel array with at least one dummy pixel, a pixel array with a plurality of main pixels, and a data processing unit configured to process a signal provided from the main pixels. The dummy pixel includes: a first switch having a first terminal receiving a first voltage and a second terminal coupled to a floating node; a second switch having a first terminal receiving a second voltage; a third switch coupled between a second terminal of the second switch and the floating node; and a driving element configured to drive a first terminal thereof according to a voltage level applied to the floating node.

Storing data in dummy pixels in an image sensor

A frequency adjusting apparatus includes a frequency control signal generating unit that generates a multi-bit frequency control signal, which is changed in level bit by bit, in response to a reference clock signal, and a frequency adjusting unit that adjusts the frequency of the reference clock signal in response to the multi-bit frequency control signal.

Frequency adjusting apparatus and DLL circuit including the same

In the data input apparatus, a data delay unit outputs data input from outside the data input apparatice. The data delay unit varies the degree of delay in response to a test mode signal. A data alignment signal generating unit receives a first signal synchronized with an external clock signal and a second signal synchronized with a data strobe signal, and the data alignment signal generating unit outputs one of the first signal and the second signal as a data alignment signal in response to the test mode signal. A data alignment unit is synchronized with the data alignment signal to align the data delayed in the data delay unit. The data input apparatus improves the setup/hold window when a semiconductor memory device is in the test mode.

Data input apparatus with improved setup/hold window

A clock buffer circuit of a semiconductor device is disclosed which receives an external clock signal and generates an internal clock signal with no duty distortion. The clock buffer circuit includes a first clock buffer for receiving and buffering a normal-phase clock signal, a second clock buffer for receiving and buffering a reverse-phase clock signal, and an internal clock generator for generating an internal clock signal in response to output signals from the first and second clock buffers.

Clock buffer circuit of semiconductor device configured to generate an internal clock signal

A method of operating a non-volatile memory device changes a read voltage by determining a degree that threshold voltages of memory cells are changed and overlap each other. The method of operating the non-volatile memory device includes performing a least significant bit (LSB) program of memory cells and determining a first error rate, performing a most significant bit (MSB) program of the memory cells and determining a second error rate, and setting a read voltage corresponding to a value at which the first and second error rates are minimum values.

Method of operating a non-volatile memory device

The digital duty cycle correction circuit according to the present invention includes a first conversion circuit for buffering an internal clock output from a delay locked loop (DLL), converting the buffered internal clock into first and second clocks through first and second terminals, delaying the second clock according to voltage supplied to the second terminal through a capacitor, converting the delayed second clock into a first signal, and converting the first clock into a third clock, which rises at a falling edge of the first clock and falls at a rising edge of the first signal; and a second conversion circuit for converting the third clock into an output clock, which rises at a falling edge of the third clock and falls at a rising edge of the third clock.

Delay locked loop

A delay-locked-loop control circuit and a method of controlling a delay-locked-loop. When the delay-locked-loop is in an off-operation mode, such as a power-down mode, a self-refresh emulation mode, a self-refresh mode, and the like, the delay-locked-loop is updated with a predetermined period, thereby preventing a malfunction of the delay-locked-loop. The delay-locked-loop has an oscillating portion which generates an oscillation signal having a predetermined period when in an OFF state; a pulse generating portion which generates a pulse signal having a predetermined period using the oscillation signal; a dividing portion which divides the pulse signal to generate a delay-locked-loop update signal; and a combining portion which combines the delay-locked-loop update signal and a delay-locked-loop on signal that is enabled by an external command to generate a delay-locked-loop control signal for controlling the delay-locked-loop.

Semiconductor memory device including delay-locked-loop control circuit and control method for effective current consumption management

The present invention relates to a duty correction circuit that corrects a distorted duty of a clock signal using a delay unit and a delay controller, thereby reducing the layout area and current consumption. The duty correction circuit includes a repeater that generates a clock signal having the same phase as that of an input clock signal with a distorted duty, and a clock signal having an inverted phase of the phase; a delay line delaying the phase of the clock signal having the inverted phase and generating a feedback clock signal; a phase comparator comparing the phase of the clock signal having the same phase with the phase of the feedback clock signal and generating a delay control signal according to the phase difference between the phases of the clock signal having he same phase and the feedback clock signal; a delay controller controlling the amount of delay of the delay line according to the delay control signal; and a phase mixer performing half-phase blending on the clock signal having the same phase and the feedback clock signal and outputting a clock signal having a corrected duty.

Duty correction circuit of digital type for optimal layout area and current consumption

A writing apparatus of a semiconductor memory device includes a pulse generator, a latch unit and an output latch unit. The pulse generator outputs a first pulse every rising edge of a data strobe pulse and a second pulse every falling edge of the data strobe pulse, respectively. The latch unit latches data input every rising edge of the first pulse, latches data input every rising edge of the second pulse and the latched data, respectively, and allocates the latched data to first and second data lines. The output latch unit latches data, which are firstly allocated to the first and second data lines, in response to a first control signal, and latches data, which are secondly allocated to the first and second data lines, in response to a second control signal.

Write apparatus for DDR SDRAM semiconductor memory device

The present invention relates to a duty correction circuit that corrects a distorted duty of a clock signal using a delay unit and a delay controller, thereby reducing the layout area and current consumption. The duty correction circuit includes a repeater that generates a clock signal having the same phase as that of an input clock signal with a distorted duty, and a clock signal having an inverted phase of the phase; a delay line delaying the phase of the clock signal having the inverted phase and generating a feedback clock signal; a phase comparator comparing the phase of the clock signal having the same phase with the phase of the feedback clock signal and generating a delay control signal according to the phase difference between the phases of the clock signal having the same phase and the feedback clock signal; a delay controller controlling the amount of delay of the delay line according to the delay control signal; and a phase mixer performing half-phase blending on the clock signal having the same phase and the feedback clock signal and outputting a clock signal having a corrected duty.

A pumping circuit of a semiconductor device includes a power supply unit for supplying a power source voltage to a first node, a first transfer pump for transferring a first electric potential of the first node to a second node, a first pumping unit coupled to the first node for pumping the power source voltage applied to the first node, a first pump control unit for controlling a voltage applied to a gate of the first transfer pump, a second transfer pump for transferring a second electric potential of the second node to a high voltage output terminal, a second pumping unit coupled to the second node for selectively pumping the second electric potential of the second node, and a second pump control unit for controlling a voltage applied to a gate of the second transfer pump in response to the power source voltage level. If the power source voltage is higher than a predetermined voltage, the first pumping unit performs a pumping operation, and the second pumping unit performs only an on or off operation.

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Seoul, South Korea

Kwang Jun Cho