Samsung Electronics Co., Ltd.

Kwang-Joon Yoon

Tae-Jin Kim

Young-jun Park

Kye-won Maeng

Phil-Jae Chang

A photo-detecting device includes a buried doping layer of a first conductivity type and disposed at an upper portion of a silicon substrate. A first silicon epitaxial layer of first conductivity type is disposed on the buried doping layer, and a second silicon epitaxial layer of second conductivity type is disposed on the first silicon epitaxial layer. An isolation doping layer doped of first conductivity type is disposed at a predetermined region of the second silicon epitaxial layer to define a body region of second conductivity type. A silicon germanium epitaxial layer of second conductivity type is disposed on the body region.

Photo-detecting device and related method of formation

Methods of forming bipolar junction transistors include the steps of forming a first insulating layer on a face of a semiconductor substrate containing a collector region of first conductivity type therein and then forming an opening in the first insulating layer to expose the collector region at the face. An extrinsic base region contact layer of second conductivity type is then formed on the first insulating layer and in the opening and then an extrinsic base region of second conductivity type is formed in the collector region, at the opening in the first insulating layer. Next, a second insulating layer is formed on the extrinsic base region contact layer and first insulating layer, using the first insulating layer as a mask to prevent contact between the second insulating layer and the collector region at the face. To complete the transistor, an intrinsic base region of second conductivity type is then formed in the collector region and then an emitter region of first conductivity type is formed in the intrinsic base region.

Growing community of inventors

Seoul, South Korea

Kwang-Joon Yoon