Lg Display Co., Ltd.

Lg Philips Lcd Co., Inc.

Kwang Jo Hwang

Hee Dong Choi

Jae Hee Park

Jae Yong Park

Woo Hyun Kim

Jin Hyoung Kim

Jong Woo Park

Sang Ho Yu

Binn Kim

Hae Yeol Kim

Se June Kim

Jong Uk Bae

Se Jung Kim

A top emission OLED includes a driving TFT including a channel region and source and drain electrodes. A power supply, a ground line, and a light emitting diode are electrically coupled to the TFT and an auxiliary electrode is electrically coupled to the ground line and to the source electrode of the driver transistor. The auxiliary electrode resides between the light emitting diode and the channel region of the driver transistor and is configured to shield the channel region of the driver transistor from an electric field generated by the light emitting diode.

Organic light emitting device and method for manufacturing the same

A light emitting device includes a first substrate and a second substrate. Each substrate may be subdivided into a contact region and a pixel region. Conductive elements positioned in each of the contact region and pixel region of the first substrate may be of substantially the same height.

Light emitting device capable of removing height difference between contact region and pixel region and method for fabricating the same

An organic light emitting diode display device and a driving method are provided. The organic light emitting diode display device comprises a data driver that generates a plurality of reference data voltages that have a level proportional to a gray scale level of a digital data supplied from the timing controller. The data driver supplies the data voltages to the plurality of data lines and compensates for the data voltages in accordance with a magnitude of the feedback voltages from the plurality of pixels fed back through the plurality of feedback lines under control of the timing controller.

Organic light emitting diode display device and driving method thereof

Provided are an organic electroluminescence display device and method of fabricating the same. An organic electroluminescence display device according to the present invention includes a first substrate; a plurality of data lines arranged in a first direction on the first substrate; a plurality of gate lines arranged in a second direction on the first substrate; a plurality of pixel regions defined by the gate lines and the data lines, wherein a first pixel line is defined as a line of the pixel regions arranged in the first direction and a second pixel line is defined as a line of the pixel regions arranged in the second direction; a thin film transistor in each pixel region; a plurality of first connecting lines electrically connecting the thin film transistors of the first pixel lines with each other; and a second connecting line electrically connecting the thin film transistor of at least one of the second pixel lines.

Organic electroluminescence display device and method of fabricating the same

An array substrate of a liquid crystal device has a plurality of gate lines, data lines, pixel areas, and thin film transistors, wherein the gate lines are formed from a material of a first and second metal layer, and wherein the first metal layer of the gate line is extended on the pixel area. Also, a display device has first and second gate lines and a data line on a substrate, a thin film transistor, a pixel electrode, a first storage electrodes extending from the second gate line and wherein at least one of the first and second gate lines and the data line includes first and second line layers respectively formed of an oxidized metal later and a metal layer.

Array substrate of liquid crystal display and fabricating method thereof

An array substrate of a liquid crystal display being capable of increasing the electrostatic capacitance of a storage capacitor without decreasing the aperture ratio of the LCD. In the array substrate, the gate line is formed a disposed material of a first and a second metal layer. The first metal layer of the gate line is extended on the pixel area.

A method for manufacturing an LCD device having gate and data lines includes forming an active layer on an insulating substrate; forming a gate insulating layer over a surface of the insulating substrate including the active layer; forming a gate line and a gate electrode on the gate insulating layer, so that the gate electrode is positioned above the active layer; forming a photoresist pattern on the gate electrode and on the gate line where the gate and the data lines cross each other, wherein, the photoresist pattern surrounds the gate electrode and the gate line; forming source and drain regions in the active layer by injecting impurity ions into the active layer using the photoresist pattern as a mask; removing the photoresist pattern; forming an insulating interlayer over the entire surface of the insulating substrate, the insulating interlayer having first contact holes exposing predetermined portions of the source and drain regions; forming a data line electrically connected to the source region and crossing over the gate line on the insulating interlayer; forming a drain electrode; forming a passivation layer over the surface of the insulating substrate, the passivation layer having a second contact hole exposing a predetermined portion of the drain electrode; and forming a pixel electrode to electrically connect to the drain region through the second contact hole.

Structure for preventing disconnection in liquid crystal display device and manufacturing method thereof

A method of forming polycrystalline silicon for a liquid crystal display device is disclosed in the present invention. The method includes forming an amorphous silicon layer on a substrate, forming a plurality of catalytic metal clusters on the amorphous silicon layer, forming a catalytic metal gettering layer adjacent to the amorphous silicon layer, and heat-treating the substrate including the amorphous silicon layer to transform the amorphous silicon layer into a polycrystalline silicon layer, wherein unreacted catalytic metal clusters migrate to the catalytic metal gettering layer in a direction perpendicular to the substrate.

Method of forming polycrystalline silicon for liquid crystal display device

A method of manufacturing an LCD requires only 4 masking while preventing undercutting of a semiconductor layer and includes the steps of etching a passivation layer, an a-Si layer and a gate insulating layer simultaneously by using CF.sub.4 /He gas. The flow ratio of the He gas to CF.sub.4 gas is preferably about 15% to about 35%.

Growing community of inventors

Gyeonggi-do, South Korea

Kwang Jo Hwang