Lg Philips Lcd Co., Inc.

Lg Display Co., Ltd.

Lg Electronics Inc.

Kwang-Jo Hwang

Jae-Yong Park

Jae-Beom Choi

Woong-Kwon Kim

Woo-Hyun Kim

Sung-Sik Bae

Chang-Wook Han

In-Jae Chung

Ki-Yong Kim

Ki-Hyun Lyu

Seok Joong Kim

Ock-Hee Kim

You-Yong Jin

Eui-Tae Kim

Han-Chul Park

Jac-Yong Park

An array substrate includes: a substrate; first and second gate lines on the substrate; first and second common lines parallel to and spaced apart from the first and second gate lines; first and second data lines crossing the first and second gate lines and the first and second common lines; first and second thin film transistors in the pixel region; a first pixel electrode and a first common electrode alternately disposed in the first area, at least one of the first pixel electrode and the first common electrode having a bent part; and a second pixel electrode and a second common electrode alternately disposed in the second area.

Array substrate for liquid crystal display device and three-dimensional image display device including the same

An organic electroluminescent display device includes a substrate, gate and data lines on the substrate and crossing each other to define a pixel region, a switching element at each crossing point of the gate and data lines, a driving element coupled to the switching element, a field control electrode coupled to the driving element and overlapping a channel of the driving element, and an organic electroluminescent diode coupled to the driving element.

Organic electroluminescent display device and method of fabricating the same

An organic electroluminescent device includes first and second substrates spaced apart from and facing each other, an organic electroluminescent diode on an inner surface of the second substrate, a gate line formed on an inner surface of the first substrate in a first direction, a data line formed in a second direction crossing the first direction, a power supply line spaced apart from the data line and formed in the second direction, a switching thin film transistor at a crossing portion of the gate and data lines, a driving thin film transistor at a crossing portion of the switching thin film transistor and the power supply line, a connecting electrode connected to the driving thin film transistor, and an electrical connecting pattern corresponding to the connecting electrode and for electrically connecting the connecting electrode to the organic electroluminescent diode.

Organic electroluminescent device comprising power supply line on same layer as gate line

A mask containing apertures therein which is used for fabricating a channel of a thin film transistor (TFT), wherein the pixel charging time for a TFT in a high-resolution liquid crystal display (LCD) device is reduced by minimizing the length of the channel in the TFT when the active region is made of amorphous silicon. The length of the channel can be minimized by exposing light through the apertures in an exposure mask when forming the channel.

Thin film transistor having a short channel formed by using an exposure mask with slits

In a method of manufacturing a metal pattern, a metal layer is deposited on a passivation layer, and a photoresist pattern is then formed on the metal layer. Using the photoresist pattern as a mask, an exposed portion of the metal layer is treated with a plasma to lower a binding force in the metal. The metal layer is then etched to form a the metal pattern. The method is applicable to the formation of pixel electrodes in LCD devices.

Method of patterning a metal layer in a semiconductor device

A method of crystallizing amorphous silicon includes forming an amorphous silicon layer on a substrate, placing a mask over the substrate including the amorphous silicon layer, and applying a laser beam onto the amorphous silicon layer through the mask to form a first crystallized region, the laser beam having an energy intensity high enough to completely melt the amorphous silicon layer, wherein the mask comprises a base substrate, a phase shift layer on the base substrate, having a plurality of first stripes having a first width separated by slits, and a blocking layer overlapping the phase shift layer, having a plurality of second stripes having a second width narrower than the first width, the second stripes being parallel to the first stripes.

Mask and method for crystallizing amorphous silicon

An organic electroluminescent device, includes: a first substrate including a first pixel region, the first pixel region including first, second and third sub-pixel regions; an array element layer on an inner surface of the first substrate, the array element layer including a thin film transistor in each sub-pixel region; a second substrate facing the first substrate and being spaced apart from the first substrate, the second substrate including a second pixel region corresponding to the first pixel region, and the second pixel region including fourth, fifth and sixth sub-pixel regions; an organic electroluminescent diode on an inner surface of the second substrate in each sub-pixel region; and a connection electrode electrically connecting the first substrate to the second substrates, wherein the fourth, fifth and sixth sub-pixel regions have different sizes from each other.

Organic electroluminescent device and fabricating method thereof

An organic electroluminescent device includes first and second substrates facing and spaced apart from each other; a gate line on an inner surface of the first substrate; a semiconductor layer over the gate line, the semiconductor layer overlying a surface of the first substrate; a data line crossing the gate line; a data ohmic contact layer under the data line, the data ohmic contact layer having the same shape as the data line; a power line parallel to, or substantially parallel to, and spaced apart from the data line, the power line including the same material as the gate line; a switching thin film transistor connected to the gate line and the data line, the switching thin film transistor using the semiconductor layer as a switching active layer; a driving thin film transistor connected to the switching thin film transistor and the power line, the driving thin film transistor using the semiconductor layer as a driving active layer; a connection pattern connected to the driving thin film transistor, the connection pattern including a conductive polymeric material; a first electrode on an inner surface of the second substrate; an organic electroluminescent layer on the first electrode; and a second electrode on the organic electroluminescent layer, the second electrode contacting the connection pattern.

Dual panel type organic electroluminescent device and method of fabricating the same

A packaging structure of a driving circuit for a liquid crystal display device comprises a base film, a plurality of first metal lines being formed on the base film and being disposed with a certain distance between neighboring first metal lines, an insulating film on the first metal lines, the insulating film exposing both ends of the first metal lines, and a plurality of second metal lines on the insulating film, the second metal lines being formed parallel to the first metal lines.

Packaging structure of a driving circuit for a liquid crystal display device and packaging method of driving circuit for a liquid crystal display device

An advantage of the present invention is to provide a method of manufacturing an array substrate for a liquid crystal display device in which a mask that has double slits in it is used in the photolithographic masking process for the pixel electrode to reduce the distance between a pixel electrode and a neighboring pixel electrode and thus reduce the width of a data line, which results in an improvement of the aperture ratio.

Method of manufacturing an array substrate for a liquid crystal display device

A mask containing apertures therein which is used for fabricating a channel of a thin film transistor (TFT), wherein the pixel charging time for a TFT in a high-resolution liquid crystal display (LCD) device is reduced by minimizing the length of the channel in the TFT when the active region is made of amorphous silicon. The length of the channel can be minimized by exposing light through the apertures is an exposure mask when forming the channel.

A liquid crystal display according to the present invention uses an organic layer treated with Hplasma before fabricating an inorganic layer on the top of the organic layer. When forming thin film transistors (TFT) used in the LCD, an Indium Tin Oxide layer is fabricated above the TFTs and acts as a pixel electrode. When the organic layer, such as a passivation layer, is treated with the Hplasma, an intermediate layer having an O&#x2014;H bonding structure is formed to enhance bonding or attachment of an inorganic layer, such as an ITO layer, to the organic layer.

Growing community of inventors

Gyeonggi-do, South Korea

Kwang-Jo Hwang