Samsung Electronics Co., Ltd.

Kwang Jin Moon

Seok Ho Kim

Ho Jin Lee

Byung Lyul Park

Hoon Joo Na

Nae In Lee

Jae Hyung Park

Ho-Jin Lee

Hyung Jun Jeon

Son-kwan Hwang

Tae Seong Kim

Kyu Ha Lee

Seung Ha Oh

Tae Yeong Kim

Jin Nam Kim

Ju Bin Seo

Joo Hee Jang

Pil Kyu Kang

A semiconductor package includes a first semiconductor chip, which includes a first semiconductor substrate and a first bonding layer on the first semiconductor substrate. A second semiconductor chip includes a second semiconductor substrate, a second bonding layer bonded to the first bonding layer, and a chip-through-via which penetrates the second semiconductor substrate and is connected to the second bonding layer. A passivation film extends along an upper side of the second semiconductor chip and does not extend along side-faces of the second semiconductor chip. The chip-through-via penetrates the passivation film. A multiple-gap-fill film extends along the upper side of the first semiconductor chip, the side faces of the second semiconductor chip, and the side faces of the passivation film. The multiple-gap-fill films includes an inorganic filling film and an organic filling film which are sequentially stacked on the first semiconductor chip.

Semiconductor device and method for fabricating the same

A semiconductor device comprises a substrate that including a frontside comprising an active region and a backside opposite to the frontside, an electronic element on the active region, a frontside wiring structure electrically connected to the electronic element on the frontside of the substrate, and a backside wiring structure electrically connected to the electronic element on the backside of the substrate. The backside wiring structure includes a plurality of backside wiring patterns sequentially stacked on the backside of the substrate, and a super via pattern that intersects and extends through at least one layer of the plurality of backside wiring patterns.

Semiconductor device including backside wiring structure with super via

A semiconductor package that include first and second semiconductor chips bonded together, wherein the first semiconductor chip includes a first semiconductor substrate, a first semiconductor element layer and a first wiring structure sequentially stacked on a first surface of the first semiconductor substrate, first connecting pads and first test pads on the first wiring structure, and first front-side bonding pads, which are connected to the first connecting pads, wherein the second semiconductor chip includes a second semiconductor substrate, a second semiconductor element layer and a second wiring structure sequentially stacked on a third surface of the second semiconductor substrate, and first back-side bonding pads bonded to the first front-side bonding pads on the fourth surface of the second semiconductor substrate, and wherein the first test pads are not electrically connected to the second semiconductor chip.

Semiconductor package and method of fabricating the same

A method for wafer planarization includes forming a second insulating layer and a polishing layer on a substrate having a chip region and a scribe lane region; forming a first through-hole in the polishing layer in the chip region and the scribe lane region and a second through-hole in the second insulating layer in the chip region, wherein the second through-hole and the first through-hole meet in the chip region; forming a pad metal layer inside the first through-hole and the second through-hole and on an upper surface of the polishing layer; and polishing the polishing layer and the pad metal layer by a chemical mechanical polishing (CMP) process to expose an upper surface of the second insulating layer in the chip region and the scribe lane region.

Method for wafer planarization and an image sensor made by the same

A semiconductor device includes a first semiconductor chip having a first bonding layer and a second semiconductor chip stacked on the first semiconductor chip and having a second bonding layer. The first bonding layer includes a first bonding pad, a plurality of first internal vias, and a first interconnection connecting the first bonding pad and the plurality of first internal vias. The second bonding layer includes a second bonding pad bonded to the first bonding pad. An upper surface of the first interconnection and an upper surface of the first bonding pad are coplanar with an upper surface of the first bonding layer. The first interconnection is electrically connected to the plurality of different first internal lines through the plurality of first internal vias.

Semiconductor device bonded by bonding pads

There is provided a method for fabricating a substrate structure capable of enhancing process reproducibility and process stability by trimming a bevel region of a substrate using a wafer level process. The method includes providing a first substrate including first and second surfaces opposite each other and a first device region formed at the first surface, providing a second substrate including third and fourth surfaces opposite each other and a second device region at the third surface, bonding the first substrate and the second substrate to electrically connect the first device region and the second device region, and forming a trimmed substrate. The forming the trimmed substrate includes etching an edge region of the second substrate bonded to the first substrate.

Method for fabricating substrate structure and substrate structure fabricated by using the method

A method of manufacturing a substrate structure includes providing a first substrate including a first device region on a first surface, providing a second substrate including a second device region on a second surface, such that a width of the first device region is greater than a width of the second device region, and bonding the first substrate and the second substrate, such that the first and second device regions are facing each other and are electrically connected to each other.

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Hwaseong-si, South Korea

Kwang Jin Moon